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MGF4918D Abstract: MGF4314D MGF4919F MGF4318D MGF4316D MGF4919 MGF4319F MGF4317D MGF-4317D MGF4914D Text: LOW NOISE InGaAs HEMT M G F 4 x x x x Series T y p ic a l C h aracteristics Type MGF4314D MGF4316D MGF4317D MGF4318D MGF4314E MGF4318E MGF4316F MGF4319F MGF4416D MGF4417D MGF4418D MGF4511D MGF4714AP MGF4914D MGF4916D MGF4917D MGF4918D MGF4914E MGF4918E MGF4916F	OCR Scan	PDF	GD-16 GD-15 GD-18 MGF4314D MGF4316D MGF4317D MGF4318D MGF4314E12 MGF4918D MGF4919F MGF4919 MGF4319F MGF-4317D MGF4914D
dfp 740 Abstract: DFP 830 M5M27C102P MGF4511D m5m27c102pffp Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4511D S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF4511D super-low-noise HEMT High Electron Mobility Transistor is designed for use in K band ampli fiers. The new metal-ceramic package is used to reduce	OCR Scan	PDF	MGF4511D MGF4511D 18GHz GD-15 M5M27C102P RV-15 1048576-BIT 65536-W0RD 16-BIT) dfp 740 DFP 830 m5m27c102pffp
MGF1200 Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.	OCR Scan	PDF	MGF1102 MGF1302 MGF1303B MGFI323 MGF1402B MGFI412B MGF1403B MGF1423B MGFI425B MGFI902B MGF1200 MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF4305A
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF4511D SU PER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 5 1 1 D super-low -noise HEMT High Electron M ob ility Transistor is designed fo r use in K band am pli fiers. The new m etal-ceram ic package is used to reduce	OCR Scan	PDF	GF4511D 078MINX MGF4511D