MGF4511D Search Results

MGF4918D

Abstract: MGF4314D MGF4919F MGF4318D MGF4316D MGF4919 MGF4319F MGF4317D MGF-4317D MGF4914D
Contextual Info: LOW NOISE InGaAs HEMT M G F 4 x x x x Series T y p ic a l C h aracteristics Type MGF4314D MGF4316D MGF4317D MGF4318D MGF4314E MGF4318E MGF4316F MGF4319F MGF4416D MGF4417D MGF4418D MGF4511D MGF4714AP MGF4914D MGF4916D MGF4917D MGF4918D MGF4914E MGF4918E MGF4916F

dfp 740

Abstract: DFP 830 M5M27C102P MGF4511D m5m27c102pffp
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4511D S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF4511D super-low-noise HEMT High Electron Mobility Transistor is designed for use in K band ampli­ fiers. The new metal-ceramic package is used to reduce

MGF1200

Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF4511D SU PER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 5 1 1 D super-low -noise HEMT High Electron M ob ility Transistor is designed fo r use in K band am pli­ fiers. The new m etal-ceram ic package is used to reduce