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Catalog Datasheet	MFG & Type	PDF	Document Tags
GD-30 Abstract: InGaAs HEMT mitsubishi Text: May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.	Original	PDF	May/2008 MGF4934AM/BM MGF4934BM 12GHz GD-30 InGaAs HEMT mitsubishi
Untitled Abstract: No abstract text available Text: < Low Noise GaAs HEMT > MGF4934BM 4pin flat lead package DESCRIPTION The MGF4934BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost	Original	PDF	MGF4934BM MGF4934BM 12GHz MGF4934BM-75 15000pcs/reel
Untitled Abstract: No abstract text available Text: < Low Noise GaAs HEMT > MGF4934BM 4pin flat lead package DESCRIPTION The MGF4934BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost	Original	PDF	MGF4934BM MGF4934BM 12GHz MGF4934BM-75 15000pcs/reel
Untitled Abstract: No abstract text available Text: Dec./2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.	Original	PDF	MGF4934AM/BM MGF4934BM 12GHz 3000pcs/reel