TRANSISTOR EMITTER COLLECTOR CAPACITANCE Search Results
TRANSISTOR EMITTER COLLECTOR CAPACITANCE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GC321AD7LP153KX18D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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GC331BD7LP473KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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GC332DD7LP154KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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GC343DD7LQ154KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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GC355DD7LQ334KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
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TRANSISTOR EMITTER COLLECTOR CAPACITANCE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSP2907A GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Vceo“ 60V • Collector Dissipation: Pc max *625mW ABSOLUTE MAXIMUM RATINGS {TA=25t:) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage |
OCR Scan |
KSP2907A 625mW KSP2907 -10mA, -150mA, -500mA, -15mA -50mA | |
100khz 5v transistor npnContextual Info: 2N5088 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V Ceo =30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage |
OCR Scan |
2N5088 625mW 100pA, 100khz 5v transistor npn | |
transistor 2n5551
Abstract: 2N5551-NPN 2N5551
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2N5551 625mW Width300s, transistor 2n5551 2N5551-NPN 2N5551 | |
2N5088 equivalent
Abstract: 2n5088 transistor transistor 2N5210 2N5210 2N5088
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2N5210 625mW 2N5088 100MHz Width300s, 2N5088 equivalent 2n5088 transistor transistor 2N5210 2N5210 | |
TRANSISTOR 2n5401
Abstract: 2N5401
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2N5401 625mW Width300s, -120V, -10mA, -50mA, TRANSISTOR 2n5401 2N5401 | |
ksp5172Contextual Info: KSP5172 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: Vce t “25V • Collector Dissipation: Pc (max *625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage |
OCR Scan |
KSP5172 625mW Vcb-25V, lc-10mA, ksp5172 | |
transistor 5401
Abstract: 2N5401NLBU 2N5401 fairchild 5401 transistor transistor 2N 5401 2N5401BU Transistor B C 458 2n5401 application
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2N5401 625mW 2N5401 O-92-3 2N5401BU 2N5401CTA 2N5401NLBU 2N5401TA 2N5401TAR transistor 5401 2N5401 fairchild 5401 transistor transistor 2N 5401 Transistor B C 458 2n5401 application | |
Contextual Info: KSP8097 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO=25V • Collector Dissipation: PC max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage |
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KSP8097 625mW 2N5088 | |
2N6515
Abstract: 2N6517
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2N6517 625mW 2N6515 100mA, Width300s, 2N6517 | |
Contextual Info: KST5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR SOT-23 • Collector-Emitter Voltage: VCEO=160V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage |
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KST5551 625mW OT-23 2N5551 | |
transistor 2n5550
Abstract: 2N5550 2N5551
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2N5550 625mW 2N5551 transistor 2n5550 2N5550 | |
2N6515Contextual Info: 2N6515 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO= 250V • Collector Dissipation: PC max =625mW TO-92 ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage |
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2N6515 625mW 100mA, Width300s, 2N6515 | |
2N5401 fairchild
Abstract: transistor 2N5401 2N5401 2n5401 transistor
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2N5401 625mW 2N5401 fairchild transistor 2N5401 2N5401 2n5401 transistor | |
Contextual Info: 2N6516 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO=300V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage |
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2N6516 625mW 2N6515 | |
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Contextual Info: 2N5210 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V Ce o = 5 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage |
OCR Scan |
2N5210 625mW 2N5088 100/iA, 100KHZ 20/iA 22KSJ | |
2n5088 transistor
Abstract: transistor 473 100khz 5v transistor 2N5088 2N5210
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OCR Scan |
2N5210 625mW 2N5088 100KHZ 20MHz 20fiA 10Kfi 2n5088 transistor transistor 473 100khz 5v transistor 2N5210 | |
Contextual Info: 2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO=350V • Collector Dissipation: PC max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage |
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2N6517 625mW 2N6515 | |
KST3904
Abstract: KST4124
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OCR Scan |
KST4124 KST3904 OT-23 100MHz 100fiA, 7Tb4142 KST4124 | |
kst2907Contextual Info: KST2907 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA»25t: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature |
OCR Scan |
KST2907 OT-23 -10mA, Un-15mA -500mA, -50mA -50mA, 100MHz -150mA -15mA kst2907 | |
Contextual Info: BCX71K PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature |
OCR Scan |
BCX71K OT-23 BT5086 | |
Contextual Info: BCX70H NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature |
OCR Scan |
BCX70H OT-23 MMBT3904 | |
KST3906
Abstract: KST3906 samsung vce 1v
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KST3906 OT-23 Out00¶ -10mA -50mA -100mA -10mA, -50mA, KST3906 KST3906 samsung vce 1v | |
Contextual Info: BCX70K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol |
OCR Scan |
BCX70K MMBT3904 100MHz QQ2S064 | |
KSP2907a TRANSISTOR PNP
Abstract: transistor PN2907 "General Purpose Transistor" transistor ksp2907a KSP2907A PN2907
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KSP2907A 625mW KSP2907a TRANSISTOR PNP transistor PN2907 "General Purpose Transistor" transistor ksp2907a KSP2907A PN2907 |