TRANSISTOR C208 Search Results

BTC3906M3

Abstract: 01673
Contextual Info: CYStech Electronics Corp. Spec. No. : C208M3 Issued Date : 2003.08.18 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTC3906M3 Description The BTC3906M3 is designed for general purpose applications requiring high breakdown voltage.

n5551 transistor

Abstract: n5551 BTN5551A3 BTP5401A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C208A3 Issued Date : 2003.06.06 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN5551A3 Description The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage.

BTC3906L3

Contextual Info: CYStech Electronics Corp. Spec. No. : C208L3 Issued Date : 2004.09.21 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTC3906L3 Description The BTC3906L3 is designed for general purpose applications requiring high breakdown voltage.

BTC3906M3

Contextual Info: CYStech Electronics Corp. Spec. No. : C208M3 Issued Date : 2003.08.18 Revised Date :2006.12.04 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTC3906M3 Description The BTC3906M3 is designed for general purpose applications requiring high breakdown voltage.

BTN5551N3

Abstract: BTP5401N3 sot-23 MARKING CODE G1
Contextual Info: CYStech Electronics Corp. Spec. No. : C208N3-H Issued Date : 2003.06.06 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN5551N3 Description The BTN5551N3 is designed for general purpose applications requiring high breakdown voltage.

BTA1514N3

Abstract: BTC3906N3
Contextual Info: Spec. No. : C208N3 Issued Date : 2002.05.11 Revised Date : 2005.01.12 Page No. : 1/4 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC3906N3 Description The BTC3906N3 is designed for general purpose applications requiring high breakdown voltage.

BTC3906L3

Abstract: BTA1514L3 IC DATE CODE marking G1 BT-C39
Contextual Info: CYStech Electronics Corp. Spec. No. : C208L3 Issued Date : 2004.09.21 Revised Date : 2006.12.26 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTC3906L3 Description The BTC3906L3 is designed for general purpose applications requiring high breakdown voltage.

BTA1579S3

Abstract: BTC4102S3 e1 IC sot323
Contextual Info: Spec. No. : C208S3 Issued Date : 2003.06.11 Revised Date : Page No. : 1/4 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC4102S3 Description The BTC4102S3 is designed for high voltage amplification application. Features • High breakdown voltage. BVCEO=120V

ST1736

Abstract: optocouplers H11B1
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS H11B1 H11B2 H11B3 PACKAGE DIMENSIONS DESCRIPTION The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-line package. ft ft ft FEATURES

MCA255

Abstract: MCA230 mca231 MCA255 equivalent
Contextual Info: QUALITY TECHNOLOGIES PHOTODARLINGTON OPTOCOUPLERS MCA230 MCA231 MCA255 DESCRIPTION The MCA230, MCA231 and MCA255 are photodarlington optically coupled isolators. An infrared emitting diode coupled with a silicon photodarlington transistor. The device is supplied in a standard plastic

TL139

Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
Contextual Info: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to

TRANSISTOR C802

Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

Contextual Info: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz

VdS 2093 2009

Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114
Contextual Info: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz

TL272

Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O
Contextual Info: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty

c102 TRANSISTOR

Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

TRANSISTOR C802

Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

Contextual Info: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to

TL225

Abstract: ATC100A6R2CW150X
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

Contextual Info: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.

Ceramic Surface Mount Amplifiers

Abstract: SURFACE MOUNT rf TRANSFORMER AM05-0005 AM05-0005-TB AM05-0006 AM05-0006-TB C2084
Contextual Info: C2084 Application Notes Ceramic Surface Mount Amplifiers V 2.00 1. Introduction M/A-COM’s Ceramic Surface Mount amplifier platform offers superior intermodulation performance for IF amplifiers in a commercial LGA Land Grid Array package. This design approach integrates coupler

C2084

Abstract: AM05-0006 AM05-0005 AM05-0005-TB AM05-0006-TB
Contextual Info: Application Note C2084 Ceramic Surface Mount Amplifier Rev. V3 1. Introduction M/A-COM’s Ceramic Surface Mount amplifier platform offers superior intermodulation performance for IF amplifiers in a commercial LGA Land Grid Array package. This design approach