TRANSISTOR C 4106 Search Results

SMP20P10

Contextual Info: SMP20P10 C X *Siliconix in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-22QAB TOP VIEW PRODUCT SUMMARY V BR DSS -1 0 0 rDS(ON) (O ) (A) •d 0 .2 0 -2 0 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor VN 2406L 3 DRAIN N -C h an n el — Enhancem ent Motorola Preferred Device 1 SOURCE MAXIMUM RATINGS Unit Symbol Value D rain-Source Voltage V d SS 240 Vdc D rain-G ate Voltage V d GR 60 Vdc G ate-S ource Voltage

2SC4356

Abstract: transistor c 4106
Contextual Info: M ITSUBISHI SEM ICONDUCTO R SM A LL-SIG N A L TRANSISTO R 2SC4356 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION M itsubishi 2 S C 4 3 5 6 is a silicon N P N epitaxial type transistor d e sign e d relay OUTLINE DRAWING u ,mm

Contextual Info: National May 1996 Semiconductor" NDS9405 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-C hannel e n h a n ce m e n t m o d e p o w e r fie ld effect tra n s is to rs are p ro d u ce d u s in g N a tio n a l's

transistor c 4106

Abstract: varta 4106 varta alkaline varta alkaline aa
Contextual Info: LR 6 / AA power one Primary Alkaline Manganese Cylindrical Data Sheet Type number 4106 Designation IEC System LR6 Zn-MnO2 Alkaline Shelf Life (Coding)* 7 years Nominal Voltage [V] Typical Capacity C [mAh] Premissible Temperature Range 1.5 2.600 (discharge with high-resistance)

varta 4106

Abstract: varta aa lr6 alkaline varta transistor c 4106 varta aa VARTa aa 4106 alkaline varta 4106 varta alkaline varta alkaline aa
Contextual Info: LR 6 / AA power one Primary Alkaline Manganese Cylindrical Data Sheet Type Number 4106 Designation IEC System LR6 Zn-MnO2 Alkaline Shelf Life (Coding)* 7 years Nominal Voltage [V] Typical Capacity C [mAh] Premissible Temperature Range 1.5 2600 (discharge with high-resistance)

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

sm 41056

Abstract: 32N25E TIC 136 Transistor 25C312
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW32N25E TMOS E-FET ' Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TMOS POWER FET 32 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate

AX688

Abstract: 2N2907A PNP Transistor AX68 7668-LF
Contextual Info: ykiyjxi>ki 19-0329; R e v 0, 12/94 EMftLU A "0 'jKI1 H ig h -A c c u racy, L o w -D ro p o u t L in e a r R e g u la to rs The 3.3V M AX687 autom atically shuts down whenever the o u tp u t v o lta g e d ro p s b e lo w 2.96V . An in te rn a l power-fail com parator also monitors the output and pro­

AT-41410

Abstract: 41410 NF50 S21E
Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low Noise Figure: 1.6 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.0 dB Typical at 2.0␣ GHz 10.0 dB Typical at 4.0␣ GHz • High Gain-Bandwidth

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

TM 1621 lcd

Abstract: TRANSISTOR SUBSTITUTION "TRANSISTOR SUBSTITUTION" AX1621 S05402 TPF0410 diode s0540 T 1621 MH
Contextual Info: 19-1214; Rev 0; 7/97 D igitally Adjustable LCD Bias Supplies Output voltage can be set to a desired positive or nega­ tive voltage range with external resistors, and adjusted over that range with the on-board digital-to-analog con­ verter 0 A C or with a potentiometer. The MAX1620/

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

Diode LT 4104

Contextual Info: r r im m TECHNOLOGY LT1083/4/5-5 LT1083/4/5-12 3A, 5A, 7.5A Low Dropout Positive Fixed Regulators F€ATUA€S DCSCRIPTIOn • Three Terminal Fixed 5V and 12V ■ Output Current of 3A, 5A or 7.5A ■ Operates Down to 1V Dropout ■ Guaranteed Dropout Voltage at Multiple Current Levels

AT-41410

Abstract: AT41410
Contextual Info: What HEWLETT* mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low N oise Figure: 1.6 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High A ssociated Gain: 14. OdB Typical at 2.0 GHz 10.0dBTypicalat4.0 GHz

dinverter 768r

Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

Contextual Info: • b H ^T O 00073*40 TAB « t l I T C » -u o o c ^ n IW IIT C I IV Irlo o O iU Central Office Interface LS/GS Advance Information 9161-002-106-NA Features Pin Connections • Transformerless 2W to 4W conversion • Line state detection outputs: - forward current

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

T1P31

Abstract: texas instruments tip31 T1P30C Texas Instruments TIP31C TIP31C T1P-31 transistor tip31 TIP31 texas instruments tip31a TIP30
Contextual Info: TIP30, TIP30A,TIP30B, TIP30C PNP SILICON POWER TRANSISTORS JULY 1968 - R EVISED MAY 1995 • Designed for Complementary Use with the TIP29 Series • 30 W at 25°C Case Temperature TO -220 PACKAGE TOP VIEW • 1 A Continuous Collector Current BC • 3 A Peak Collector Current

Ericsson Installation guide for RBS 6000

Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMDF2C01 HD Medium Power Surface Mount Products Motorola Preferred D evice C o m p le m e n ta ry TM O S Field E ffe c t Transistors COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS M iniM O S™ d e vice s are a n a d va n ce d s e rie s o f p o w e r M O S F E Ts

35N15E

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTW35N15E TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TMOS POWER FET 35 AMPERES 150 VOLTS RDS on = 0-05 OHM N-Channel Enhancement-Mode Silicon Gate

Horizontal Transistor TT 2246

Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
Contextual Info: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz