TRANSISTOR BU 110 Search Results

TRANSISTOR BU 110 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BU 110 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor Bu 208 Abstract: BU407 transistors bu 407 Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BU 407 BU407 NPN PLASTIC POWER TRANSISTOR High Voltage, High Speed Transistors for Horizontal Deflection	Original	PDF	O-220 BU407 C-120 transistor Bu 208 BU407 transistors bu 407
k552 Abstract: No abstract text available Text: Product Specification Philips Semiconductors PowerMOS transistor BU K552-1OOA/B Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.	OCR Scan	PDF	K552-1OOA/B BUK552 -100A -100B BUK552-100A/B k552
Transistor 51Y Abstract: 51y diode S20Q Text: Product Specification Philips Semiconductors BU K554-200A/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	PDF	K554-200A/B BUK554 -200A -200B T0220AB BUK554-200A/B Transistor 51Y 51y diode S20Q
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUÜ403A GENERAL DESCRIPTION High-voltage, high-sf>eed planar-passivated npn power switching transistor in T0220AB envelope intended for use in electronic HF/OH lighting ballast applications, converters, inverters, switching regulators, motor control systems,	OCR Scan	PDF	T0220AB BUJ403A
buz350 Abstract: No abstract text available Text: U AUER PHILIPS/DISCRETE PowerMOS transistor OLE D • fabS3131 0014753 7 ■ BU Z350 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	PDF	fabS3131 T0218AA; 001475L BUZ350 T-39-13 00147SS buz350
K545 Abstract: BUK545 BUK545-200A BUK545-200B Text: PHILIPS INTERNATIONAL b5E D B TllOflEb ODbMEOb Ibfl B P H I N Product Specification Philips Semiconductors BU K545-200A/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack	OCR Scan	PDF	7110flEb K545-200A/B -SOT186 BUK545 -200A K545 BUK545-200A BUK545-200B
Untitled Abstract: No abstract text available Text: PowerM OS transistor N AMER PHILIPS/DISCRETE _ BU Z63_J DbE D • hbSBTBl D014b33 T ■ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in	OCR Scan	PDF	D014b33 BUZ63_ bbS3T31 T-39-11 BUZ63 14h3fl III11 i111111
K545 Abstract: No abstract text available Text: N AI1ER PHILIPS/DISCRETE b 'lE I> bb53R31 DD3D7bS 14E « A P X Product Specification Philips Semiconductors BU K545-1OOA/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack	OCR Scan	PDF	bb53R31 K545-1OOA/B PINNING-SOT186 BUK545 003D7bS BUK545-100A/B K545
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE ObE D • bbS3T31 DD144D2 5 ■ PowerM OS transistor BU Z71 \|j May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	PDF	bbS3T31 DD144D2 bb53T31 BUZ71 T-39-11 00144D7 BUZ71_
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE OLE D PowerM OS transistor • tbS3T31 00147T4 1 BU Z385 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is particularly suitable for motor	OCR Scan	PDF	tbS3T31 00147T4 Fig25Â BUZ385 T-39-13 bb53TBl
Untitled Abstract: No abstract text available Text: BU _ Z80A PowerM OS transistor N AUER PHILIPS/DISCRETE OLE D • bbSBTBl □ 014S4CI T ■ T -S 9 -H May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	PDF	014S4C BUZ80A_ BUZ80A T-39-11
toroid FT10 Abstract: BUL45F 221A-06 221D BUL45 MJE18006 MJF18006 1000 watt hf transistor 12 volt 150 watt hf transistor 12 volt Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU L45* BUL45F* Designer’s Data Sheet NPN Silicon Power Transistor 'M otorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS High Voltage SWITCHMODE™ Series Designed for use in electronic ballast light ballast and in Switchmode Power	OCR Scan	PDF	BUL45F, E69369 BUL45 BUL45F toroid FT10 221A-06 221D MJE18006 MJF18006 1000 watt hf transistor 12 volt 150 watt hf transistor 12 volt
BUK442-100A Abstract: BUK442-100B Text: N AMER PHILIPS/DISCRETE □TE D • bbS3T31 0D3G510 273 * A P X Product Specification P hilip s S e m icon ducto rs BU K442-1OOA/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode f ield-effect power transistor in a plastic full-pack envelope.	OCR Scan	PDF	K442-1OOA/B EUK442 -100A OT186 BUK442-100A BUK442-100B
transistor BC 536 Abstract: aeg power base 60 b transistor BU 536 transistor bu 311 MARKING JM T0p3 BU 103A transistor BU536 BC 536 BC 536 transistor Text: BU 536 TTdUFHiKiKIiM electronic Creati»Technologies' Silicon NPN Power Transistor Applications: Switching mode power supply Features: • In triple diffusjon technique Short switching time • Glass passivation Power dissipation 62 W • High reverse voltage	OCR Scan	PDF	V777- T0126 15A3D1N 15A3DIN transistor BC 536 aeg power base 60 b transistor BU 536 transistor bu 311 MARKING JM T0p3 BU 103A transistor BU536 BC 536 BC 536 transistor

Untitled Abstract: No abstract text available Text: HR DATA HIGH VOLTAGE SILICON BU 536 POWER S«ITCHING TO-3 NP« SHEET 8A; TRANSISTOR 75« SWITCH MODE CTV POWER SUPPLY APPLICATION ABSOLUTE MAXIMUM RATINGS ; Ta=25deg C SVHBÖL VALUE UNIT Collector Emitter Voltage VCES 1100 V Collector Emitter (sus) Voltage	OCR Scan	PDF	25deg VCE4100V, case-125 AZ240194PG/V/NK
MTPBP10 Abstract: UL-44 l44 transistor transistor L44 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet B U L44 * BU L44F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Pffcr#d Dtvtc* POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL44/BUL44F have an applications specific state-of-the-art die designed	OCR Scan	PDF	BUL44/BUL44F MTPBP10 UL-44 l44 transistor transistor L44
BUK416-100AE Abstract: YT150 30444 BUK416-100BE BUK416-1OOAE mkp-x Text: N AMER P H I L I P S / D I S C R E T E L^E D • G03D440 DET HIAPX Product Specification Philips Semiconductors BU K416-1OOAE/BE PowerM OS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device Is intended for use in	OCR Scan	PDF	G03D440 BUK416-1OOAE/BE OT227B BUK416 bb53R31 BUK416-1OO0E BUK416-100AE YT150 30444 BUK416-100BE BUK416-1OOAE mkp-x
TRANSISTOR MARKING CODE R2A Abstract: din 74 F5 TRANSISTOR MARKING 705 transistor 81 110 w 85 transistor BU 109 705 transistor ZS20 TRANSISTOR BC 5 transistor BU 705 transistor 263-1 Text: TELEFUNKEN ELECTRONIC 17E » • lALGfi DOCHM'JB b BU 705 in u m id ì« ! electronic CreativeTtchooieg*« T-33-13 Silicon NPN Power Transistor Applications: Horizontal deflection circuits in black and white TV-receivers Features: • High reverse voltage	OCR Scan	PDF	DIN41 T-33-/S T0126 15A3DIN TRANSISTOR MARKING CODE R2A din 74 F5 TRANSISTOR MARKING 705 transistor 81 110 w 85 transistor BU 109 705 transistor ZS20 TRANSISTOR BC 5 transistor BU 705 transistor 263-1
BUZ84 Abstract: No abstract text available Text: N AMER PH IL IP S/ D I S CR E T E PowerMOS transistor ObE D • bb53T31 O O m b l b BU Z84 1 ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	PDF	bb53T31 BUZ84 T-39-13 S3131 BXXZ84_ D0147Q2 BUZ84
transistor N100 Abstract: N100 transistor K 192 A transistor Transistor 5331 BUZ42 N100 T0220AB V103 transistor k 3911 Text: N AMER P H I L I PS /D I SC RE T E ObE D • tb53131 Power M OS transistor OOIMSOO BU Z42 5 r - 3 7 -\i May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	PDF	BUZ42 0014SDb T-39-11 transistor N100 N100 transistor K 192 A transistor Transistor 5331 BUZ42 N100 T0220AB V103 transistor k 3911
705 transistor Abstract: transistor BU 705 transistor BU 109 TOP-3 weight transistor BU 110 u 110 telefunken Scans-0014927 Text: TELEFUNKEN ELECTRONIC 17E » • lALGfi DOCHM'JB b BU 705 i n u m i d ì « ! electronic Creative Ttchooieg*« T-33-13 Silicon NPN Power Transistor Applications: Horizontal deflection circuits in black and white TV-receivers Features: • High reverse voltage	OCR Scan	PDF	DIN41 T-33-/S T-33-13 705 transistor transistor BU 705 transistor BU 109 TOP-3 weight transistor BU 110 u 110 telefunken Scans-0014927
on 2518 transistor Abstract: transistor BU 536 transistor BC 536 C 3311 transistor 536 transistor T-33-11 Text: TELEFUNKEN ELECTRONIC 17E D • Ô ^ Ü O T b 000e]Liö3 3 ■ ALG6 • BU 536 'ïTifLf FMKdM electronic CreativeTecbnotojpe* T-33-11 Silicon NPN Power Transistor Applications: Switching mode power supply Features: • In triple diffusjon technique • Short switching time	OCR Scan	PDF	T-33-11 15A3DIN on 2518 transistor transistor BU 536 transistor BC 536 C 3311 transistor 536 transistor T-33-11
buz23 Abstract: No abstract text available Text: PowerM OS transistor_ _ BU Z23 N AMER PHILIPS/DISCRETE ObE D • bbSSTBl D O m S T l T July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	PDF	DD145^ BUZ23 T-39-11 bbS3T31 0D14ST7 buz23
transistor Bc 82 Abstract: B 722 P 12A3 BU902 T0126 transistor c s z 44 v Text: TELEFUNKEN ELECTRONIC 17E D • ô'iBDO'îb O O O W ? . TnHLtMFtLDK]BS l!?a electronic BU 902 C rta tiv e Tfccbnotoot« Silicon NPN Power Transistor r - 3 3 .-13 Application: Switching mode power supply Features: • In triple diffusion technique • Short switching time	OCR Scan	PDF	T0126 15A3DIN transistor Bc 82 B 722 P 12A3 BU902 T0126 transistor c s z 44 v

TRANSISTOR BU 110 Search Results

TRANSISTOR BU 110 Result Highlights (5)

TRANSISTOR BU 110 Datasheets Context Search

transistor Bu 208

k552

Transistor 51Y

Untitled

buz350

K545

Untitled

K545

Untitled

Untitled

Untitled

toroid FT10

BUK442-100A

transistor BC 536

Untitled

MTPBP10

BUK416-100AE

TRANSISTOR MARKING CODE R2A

BUZ84

transistor N100

705 transistor

on 2518 transistor

buz23

transistor Bc 82