2PG301
Abstract: No abstract text available
Text: 2PG301 IGBTs 2PG301 Insulated Gate Bipolar Transistor Unit : mm • Features High breakdown voltage : VCES= 400V ● Housing in the surface mounting package possible ■ Applications 1.0±0.1 1.5±0.1 Large current control possible : IC peak =130A 10.0±0.3
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2PG301
2PG301
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2PG301
Abstract: No abstract text available
Text: 2PG301 IGBTs 2PG301 Insulated Gate Bipolar Transistor Unit : mm • Features High breakdown voltage : VCES= 400V 3.4±0.3 8.5±0.2 Large current control possible : IC peak =130A ● Housing in the surface mounting package possible 1.0±0.1 For camera flash-light
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2PG301
2PG301
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP26G40GEO-HF-3 Insulated Gate Bipolar Power Transistor High Peak Current Capability C C C 400V VCE High Input Impedance C I CP 150A Low 3.0V Gate Drive Strobe Flash Applications TSSOP-8 RoHS-compliant, halogen-free package
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AP26G40GEO-HF-3
AP26G40
26G40GEO
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2PG301
Abstract: No abstract text available
Text: 2PG301 IGBTs 2PG301 Insulated Gate Bipolar Transistor Unit : mm • Features High breakdown voltage : VCES= 400V 3.4±0.3 8.5±0.2 ● Large current control possible : IC peak =130A ● Housing in the surface mounting package possible M Di ain sc te on na
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2PG301
2PG301
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AP28G40GEO
Abstract: No abstract text available
Text: AP28G40GEO RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Peak Current Capability C C C VCE 400V ICP 150A C ▼ Low Gate Drive ▼ Strobe Flash Applications TSSOP-8 E E
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AP28G40GEO
00V/us,
0V-30V)
AP28G40GEO
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP30G40GEO-HF-3 Insulated Gate Bipolar Power Transistor High Peak Current Capability C C C 400V VCE High Input Impedance C I CP 150A Low 3.0V Gate Drive Strobe Flash Applications TSSOP-8 RoHS-compliant, halogen-free package
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AP30G40GEO-HF-3
AP30G40
30G40GEO
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AP28G40GEO-HF-3
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP28G40GEO-HF-3 Insulated Gate Bipolar Power Transistor High Peak Current Capability C C C 400V VCE High Input Impedance C I CP 150A Low Gate Drive Strobe Flash Applications TSSOP-8 RoHS-compliant, halogen-free package E E
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AP28G40GEO-HF-3
AP28G40
28G40GEO
AP28G40GEO-HF-3
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28G40GEO
Abstract: AP28G40GEO
Text: AP28G40GEO RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Peak Current Capability C C C VCE 400V ICP 150A C ▼ Low Gate Drive ▼ Strobe Flash Applications TSSOP-8 E E
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AP28G40GEO
28G40GEO
AP28G40GEO
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP28G45GEO-HF-3 Insulated Gate Bipolar Power Transistor High Peak Current Capability G E E 400V VCE High Input Impedance E I CP 150A Low Gate Drive Strobe Flash Applications TSSOP-8 RoHS-compliant, halogen-free package C C
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AP28G45GEO-HF-3
AP28G45
28G45GEO
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Untitled
Abstract: No abstract text available
Text: AP28G45GEO-HF RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Peak Current Capability E ▼ Low Gate Drive ▼ Strobe Flash Applications G E E VCE 400V ICP 150A C C TSSOP-8
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AP28G45GEO-HF
00V/us,
0V-30V)
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Untitled
Abstract: No abstract text available
Text: AP26G40GEO-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ ICP=150A @VGE=3.0V ▼ Low Gate Drive C C C VCE 400V ICP 150A C ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free TSSOP-8 E E
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AP26G40GEO-HF
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Untitled
Abstract: No abstract text available
Text: AP30G40GEO-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ ICP=150A @VGE=3.0V ▼ Low Gate Drive C C C VCE 400V ICP 150A C ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free TSSOP-8 E E
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AP30G40GEO-HF
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP28G40GEH/J-HF-3 Insulated Gate Bipolar Power Transistor 400V VCE High Input Impedance I CP 150A High Peak Current Capability G Low Gate Drive C E TO-252 H C Strobe Flash Applications G RoHS-compliant, halogen-free packages
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AP28G40GEH/J-HF-3
O-252
O-251
AP28G40
28G40GEJ
O-251
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Untitled
Abstract: No abstract text available
Text: AP28G40GEO RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Input Impedance High Peak Current Capability C C C VCE 400V ICP 150A C Low Gate Drive Strobe Flash Applications TSSOP-8 E E E C G G E Absolute Maximum Ratings
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AP28G40GEO
00V/us,
0V-30V)
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Untitled
Abstract: No abstract text available
Text: AP28G45GEO-HF RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Input Impedance High Peak Current Capability E Low Gate Drive Strobe Flash Applications G E E VCE 400V ICP 150A C C TSSOP-8 C C C G E Absolute Maximum Ratings
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AP28G45GEO-HF
00V/us,
0V-30V)
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Untitled
Abstract: No abstract text available
Text: AP30G40GEO-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ICP=150A @VGE=3.0V Low Gate Drive C C C VCE 400V ICP 150A C Strobe Flash Applications RoHS Compliant & Halogen-Free TSSOP-8 E E E C G G E Absolute Maximum Ratings
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AP30G40GEO-HF
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ct60am18b
Abstract: BR 101 Transistor IGBT 900v 60a CT60AM-18B diode 18B Diode Transistor
Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm φ 3.2 4 wr ¡VCES . 900V ¡IC . 60A
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CT60AM-18B
ct60am18b
BR 101 Transistor
IGBT 900v 60a
CT60AM-18B
diode 18B
Diode Transistor
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TRANSISTOR BIPOLAR 400V 20A
Abstract: igbt 20A 1200v IRGPH40S
Text: Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 20A
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IRGPH40S
400Hz)
O-247AC
TRANSISTOR BIPOLAR 400V 20A
igbt 20A 1200v
IRGPH40S
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TRANSISTOR BIPOLAR 400V 20A
Abstract: igbt 20A 1200v IRGPH40S igbt 1200V 20A
Text: Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 20A
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IRGPH40S
400Hz)
O-247AC
TRANSISTOR BIPOLAR 400V 20A
igbt 20A 1200v
IRGPH40S
igbt 1200V 20A
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ct60am
Abstract: resonant inverter CT60AM-18B MITSUBISHI Microwave Transistors IGBT 900v 60a 8600V TRANSISTOR ct60am microwave inverter ic
Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ 3.2 2.5 1 26 4 20.6MIN. 2 1 2 1 3 0.5 3 5.45 5.45 4.0 wr ¡VCES . 900V
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CT60AM-18B
20MAX.
ct60am
resonant inverter
CT60AM-18B
MITSUBISHI Microwave Transistors
IGBT 900v 60a
8600V
TRANSISTOR ct60am
microwave inverter ic
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IRF9210
Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF
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2N3904
2N3906
2N4401
2N4403
2N5087
2N5088
2N5551
2N6515
KSP06
KSP10
IRF9210
darlington NPN 600V 8a transistor
fet 10a 600v
darlington NPN 600V 12a transistor
transistor IRF9640
N-CH POWER MOSFET TO-92
600v 12A TO220F
NPN Transistor 600V 5A TO-220
transistor irf620
KSH117-1
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TRANSISTOR BIPOLAR 400V 20A
Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
Text: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .
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HGTD6N40E1,
HGTD6N40E1S,
HGTD6N50E1,
HGTD6N50E1S
HGTP6N40E1D,
HGTP6N50E1D
HGTP10N40C1,
HGTH12N40C1,
HGTP10N40C1D,
HGTP10N40E1D,
TRANSISTOR BIPOLAR 400V 20A
igbt 1000v 10A
P-Channel IGBT
igbt 500V 15A
igbt 40A 600V
P-CHANNEL 400V 15A
N channel 600v 20a IGBT
igbt 400V 40A
igbt 400V 20A
400V P-Channel IGBT
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CIMax
Abstract: IGT6D20 IGT6E20
Text: Insulated-Gate Bipolar Transistors - IGT6D20, IGT6E20 File Num ber 2127 N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors TERMINAL DIAGRAM 20A, 400V and 500V Tds on = 0.12 Q Features: • Low I / c e (s a t ) — 2.3V typ. @ 20A
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IGT6D20,
IGT6E20
IGT6D20
IGT6E20
60usec,
CIMax
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MC 931 transistor
Abstract: IGT6D20 TRANSISTOR BIPOLAR 400V 20A IGT6E20
Text: Insulated-Gate Bipolar Transistors - IGT6D20, IGT6E20 File Num ber 2127 N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors TERMINAL DIAGRAM 20A, 400V and 500V Tds on = 0.12 Q Features: • Low I / c e (s a t ) — 2.3V typ. @ 20A
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IGT6D20,
IGT6E20
IGT6D20
IGT6E20
60usec,
MC 931 transistor
TRANSISTOR BIPOLAR 400V 20A
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