AP28G40GEO Search Results
AP28G40GEO Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| AP28G40GEO | Advanced Power Electronics | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | Original |
AP28G40GEO Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: AP28G40GEO RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Input Impedance High Peak Current Capability C C C VCE 400V ICP 150A C Low Gate Drive Strobe Flash Applications TSSOP-8 E E E C G G E Absolute Maximum Ratings |
Original |
AP28G40GEO 00V/us, 0V-30V) | |
AP28G40GEOContextual Info: AP28G40GEO RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Peak Current Capability C C C VCE 400V ICP 150A C ▼ Low Gate Drive ▼ Strobe Flash Applications TSSOP-8 E E |
Original |
AP28G40GEO 00V/us, 0V-30V) AP28G40GEO | |
AP28G40GEO-HF-3Contextual Info: Advanced Power Electronics Corp. AP28G40GEO-HF-3 Insulated Gate Bipolar Power Transistor High Peak Current Capability C C C 400V VCE High Input Impedance C I CP 150A Low Gate Drive Strobe Flash Applications TSSOP-8 RoHS-compliant, halogen-free package E E |
Original |
AP28G40GEO-HF-3 AP28G40 28G40GEO AP28G40GEO-HF-3 | |
28G40GEO
Abstract: AP28G40GEO
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Original |
AP28G40GEO 28G40GEO AP28G40GEO |