TRANSISTOR B27 Search Results

BLX95

Abstract: BB313 L1042 blx95a TRIMMER capacitor 10-40 pf D45 TRANSISTOR philips 2222 trimmer IEC134 Miniature Ceramic Plate Capacitors 2222 philips 15Kg-cm
Contextual Info: » • bbsa'm oas'ìbHi dhs N AMER PHILIPS/DISCRETE IAPX BLX95 A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. frequency range for supply voltages up to 28 V. The transistor is resistance stabilized and is

Contextual Info: N AUER PHILIPS/DISCRETE b'lE » bbSa'ni QQS^bHl OHS BLX95 IAPX A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transmitting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is

Contextual Info: bRE J> N AJ1ER PHILIPS/DISCRETE bbS3T31 DD3DS^S Dlfi * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK436-100B

Abstract: BUK436-100A
Contextual Info: N AMER PH ILI PS/ DI SCR ET E b*iE D • ^ 53^31 □□3QML0 Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

transistor A4t 85

Abstract: 3b5 transistor transistor A4t 45 transistor A4t
Contextual Info: b5E D m VllDÔSb DQbSTBl 1T4 • PHIN PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile

Contextual Info: bRE D N AMER PH ILIP S /D IS C R E TE • bb53R31 00304bQ Rlfl ■ P hilips Sem ico nd uctors Pro d uct Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK436-100A

Abstract: BUK436-100B
Contextual Info: N AMER P H I L I P S / D I S C R E T E b*lE D • bbSa^Bl 0a3QMb0 T l f l ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

transistor 400v 3a 40w

Abstract: 40w electronic ballast BUL45A crossover LE17
Contextual Info: bOE J> • fil331fl7 DDGOSDS b27 « S M L B SEMELAB PLC SEMELAB " T - 3 3 - /Í BUL45A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR M EC H A N IC A L D A T A Dimensions in mm Designed for use in electronic ballast

SMO-14

Abstract: SLG 2016 D 2SK26 2N42 N4 TAM 2N425 marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426
Contextual Info: MIL-S-19500A1B EL See Section6 MILITARYSPECIFICATION SEMICONDUCTORDEVICE,TRANSISTOR,PNP, GERMANIUM,SWITCHING TYPSS 2N425,2Nb26, 2N42? 1. SCOPS 131 w.-. This specificationcovers the detail requirementsfor germanium PNP,“transietora for use in low-power switchingapplication

Contextual Info: March 1998 F/\IRCHII_ID M ICDNDUCTO R tm FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

D 1062 transistor

Abstract: BFE505 transistor k 2847 transistor 1234 npn TRansistor L 701 Dual RF transistor dual transistor O2
Contextual Info: Philips Semiconductors Product specification NPN wideband differential transistor FEATURES BFE505 PINNING - SOT353B • Small size SYMBOL PIN • High power gain at low bias current and voltage DESCRIPTION bi 1 base 1 • Temperature matched e 2 emitter • Balanced configuration

Contextual Info: P D - 9.1123 International ^Rectifier IRGPC50KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Vces = 600V • Short circuit rated -10ps @125°C, VGe = 15V • Switching-loss rating includes all "tail" losses

NPN Silicon Epitaxial Planar Transistor

Abstract: MZ0912B50Y TACAN
Contextual Info: Data sheet statut Preliminary apedfrcatfon date ol Issue July 1990 MZ0912B50Y NPN silicon planar epitaxial microwave power transistor F EATU RES APPLICATION d e s c r ip t io n • Interdigitated structure; high emitter efficiency. • O iffused emitter ballasting

Contextual Info: SIEMENS BUZ 76 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b flbSion Package Ordering Code BUZ 76 400 V 3A 1.8 £2 TO-220 AB C67078-S1315-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b

rp110n261

Abstract: RP110L161D RP110N151B RP110N081B RP110N141C RP110N171D RP110L121C5
Contextual Info: RP110x SERIES 150mA Low Supply Current LDO REGULATOR NO.EA-239-131023 OUTLINE The RP110x Series is a voltage regulator LDO IC, which has been developed using the CMOS process technology, with high output voltage accuracy, ultra-low supply current, and low ON-resistance transistor. The IC

Contextual Info: S IE M E N S NPN Silicon High-Voltage Transistor B F 622 • Suitable for video output stages in TV sets • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: B F 623 PNP Type Marking Ordering Code

Contextual Info: SIEMENS BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA • CECC-type available: CECC 50002/248. BFS 17P MCs 1 =B Q62702-F940 II Pin Configuration CM Marking Ordering Code Package LU Type 3=C

2N6550

Abstract: 10NV transistor B27
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-27 B-27 01/99 2N6550 N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA =25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuious Forward Gate Current

a2724

Abstract: Transistor A23 CFB0230A 2S302 A23 transistor TRANSISTOR a31 32 bit carry select adder
Contextual Info: CFB0230A CFB0230A CFB023ÛA 32-bit Carry Select Adder description: CFB0230A uses a fast carry-select algorithm to perforin an addition of two 32-bit numbers. LOGIC SYMBOL : CI A31 :0 B31:0 CFB0230A CO + I S31:0 TïflE-f32 INPUTS LOADING IN TRANSISTOR PAIRS) :

alu 74181

Abstract: 25B22 f422 S2 f19
Contextual Info: CFT1812A CFT1812A CFT1812A 32-bit ALU 74181-type DESCRIPTION: CFT1812A is a 32-bit ALU which is extended from the CFT1810A with the same functions. LOGIC SYMBOL : INPUTS (LOADING IN TRANSISTOR PAIRS ) : S3(4), S2(4), SI(4), SO(4 ), A31(2.5), A30(2.5),A29{2.5),

2N6449

Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

ETK81-050

Abstract: B-26 M102 T151
Contextual Info: ETK81-O5O 50a S ± /'7 — ¡V POWER TRANSISTOR MODULE Features 7 • • ;- * * y • hFE/P'Bjv.' • *- fa r Including Free Wheeling Diode High DC Current Gain Insulated Type | * Applications Power Switching • AC • DC Ç — AC Motor Controls • Uninterruptible Power Supply

C956

Abstract: 600V 25A Ultrafast Diode IRGPC50KD2 C955 c959 E30j C958 27e transistor transistor c954
Contextual Info: P D - 9.1123 International [ïë§Rectifier IRGPC50KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V ces = 600V •S h o rt circuit rated - 10 |js @125°C, Vg e = 15V • Switching-loss rating includes all "tail" losses

Contextual Info: ETK81-O5O 50a S ± /'7 — ¡V POWER TRANSISTOR MODULE Features 7 • • ;- * * y • hFE/P'Bjv.' • *- fa r Including Free Wheeling Diode High DC Current Gain Insulated Type | * Applications Power Switching • AC • DC Ç — AC Motor Controls • Uninterruptible Power Supply