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    Untitled

    Abstract: No abstract text available
    Text: OPTEK TECHNOLOGY INC MAE D • b7TflSflO 0001453 TT3 ■ OTK i / n u r i civ Product Bulletin HCT2907M May 1990 ^ r - *» -» /N /s Surface Mount PNP General Purpose Transistor Type HCT2907M 0.024 ORIENTATION 0 -37 - , 1. 1 6 7 *1 D 0.125 0.115 0.015 0.085


    OCR Scan     		HCT2907M HCT2907M JAN2N2907A 500mA 150mA, 500mA, PDF

    2N2907A sot-23

    Abstract: JAN2N2907A 2N2907A surface mount 2N2907A HCT2907M JAN2N2907
    Text: O P TE K T EC H N O L O G Y INC MAE ti7TûSÛ0 0 0 0 1 4 5 3 D TT3 • I OTK n, y jr I civ Product Bulletin HCT2907M May 1990 T'iT'O1 1 ! Surface Mount PNP General Purpose Transistor Type HCT2907M 0.024 ORIENTATION 0.125 0.115 3.18 (2.92) 0.015 0.085 (2.67)


    OCR Scan     		HCT2907M HCT2907M JAN2N2907A MIL-S-19500 OT-23 2N2907A 100MHz 100kHz 2N2907A sot-23 JAN2N2907A 2N2907A surface mount JAN2N2907 PDF

    samsung NAND FSR

    Abstract: 29cd16 NAND IC s CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR 264Byte
    Text: KM29N16000 2M x 8 Bit NAND Flash Memory SEMICONDUCTOR PRELIMINARY- June 1994 FEATURES GENERAL DESCRIPTION • Single 5 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 - Data Register : (258 + 8) x 8 • Automatic Program and Erase - Page Program : (256 + 8)Byte


    OCR Scan     		KM29N16000 KM29N16000 -TSOP2-400F -TSOP2-400R samsung NAND FSR 29cd16 NAND IC s CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR 264Byte PDF

    IRFS730

    Abstract: 733 mosfet 731 MOSFET IRFS731 IR 733 IRFS732 IRFS733 0D173
    Text: SAMSUNG ELECTRONICS INC b?E D • 7^4142 IRFS730/731/732/733 DDlTBbl 777 «SPIC K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance


    OCR Scan     		7Rb414B IRFS730/731/732/733 to-220f IRFS730/731 /732Z733 IRFS730 IRFS731 IRFS732 IRFS733 733 mosfet 731 MOSFET IR 733 0D173 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT223 PNP SILICON PLANAR M EDIUM POWER HIGH GAIN TRANSISTOR FZT788B IS S U E 3 - OCTOBER 1995- - - FEATURES * * Low equivalent on-resistance; RCE|Sat 93mQ at 3A Gain of 300 at lc=2 A m p s and Very low saturation voltage


    OCR Scan     		OT223 FZT788B FZT688B FZT788B PDF

    .5J1

    Abstract: 2SC3056A 1S80 2SC3056 high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz transistor 9036 Q01t
    Text: FUJITSU MICROELE CT RON IC S 31E D Di 3 7 4 m 2 OOlbStt. 3 D F H I T'33"H January 1990 Edition 1.1 O r. FUJITSU P R O D U C T P R O F IL E - 2SC3056, 2SC30S6A Silicon High Speed Power Transistor DESCRIPTION The 2SC3056/2SC3056A are silicon N PN planar general purpose, high power


    OCR Scan     		2SC3056, 2SC3056A 2SC3056/2SC3056A Q01tiS70 9036-f .5J1 2SC3056A 1S80 2SC3056 high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz transistor 9036 Q01t PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB794/795 AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS C haracteristic Collector- Base Voltage Symbol : KSB794 : KSB795 Collector- Emitter Voltage : KSB794 Rating Unit


    OCR Scan     		KSB794/795 KSB795 KSB794 300jis, KSB794 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508AF TV HORIZONTAL OUTPUT APPLICATIONS ABSOLUTE MIXIMUM RATING C haracteristic Symbol Rating Unit Collector Emitter Voltage VcES 1500 V Collector Emitter Voltage VcEO 700 V Emitter Base Voltage V ebo 5 V Collector Current DC


    OCR Scan     		BU508AF PDF

    Untitled

    Abstract: No abstract text available
    Text: BDW93/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • Complement to BDW94, BDW94A, BDW94B and BDW94C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit 45 V : BDW93A 60 V : BDW93B


    OCR Scan     		BDW93/A/B/C BDW94, BDW94A, BDW94B BDW94C BDW93 BDW93A BDW93B BDW93C PDF

    Untitled

    Abstract: No abstract text available
    Text: 7^2^237 QOSTHCn T • S G S -T H O M S O N KLUOTT^OlDOi S G S-TH0MSÔN 3 3 “ l> 2N6544 2N6545 _ 3DE D HIGH VOLTAGE POWER SWITCH DESCRIPTION The 2N6544 and 2N6545 are multiepitaxial mesa NPN transistors in Jedec TO-3 metal case. They are intended for high voltage, fast switching applica­


    OCR Scan     		2N6544 2N6545 2N6544 2N6545 2N6544-2N6545 300jis, BUX47 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M IC R O N 1 MT4LG16257 S 256K DRAM DRAM 256K x 16 DRAM 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +3.3V ±0.3V power supply*


    OCR Scan     		MT4LG16257 175mW 512-cycle MT4LC16257) MT4LC16257S) MT4LC16257 CYCLE24 PDF

    Untitled

    Abstract: No abstract text available
    Text: • o o 2 t i 3 EH ü ■ SCS-THOMSON IW fô m i « ! S G S - THOMSON ^ T - 3 3 * z ° i 2N6386 2N6387/2N6388 30E ]> POWER DARLINGTON TRANSISTORS D E S C R IP T IO N The 2N6386, 2N6387 and 2N6388 are silicon epi­ taxial-base NPN transistors in monolithic Darling­


    OCR Scan     		2N6386 2N6387/2N6388 2N6386, 2N6387 2N6388 O-220 BDX33/6DX34 PDF

    Untitled

    Abstract: No abstract text available
    Text: T2 UNITRODE CORP 9347963 UNITRODE CORP DE| " 0010^2 1 92 D 10992 RECTIFIERS D ' ü»« High Efficiency, 60A SES5803 FEATURES • Low Forward Voltage • Fast Switching Speeds • High Surge Capability • Low Therm al Resistance • M echanically Rugged DO-5 Package


    OCR Scan     		SES5803 SES5801 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MPSA55 14E D I 71fc4142 0 0 0 7 3 t i 4 7 PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: Veto =60V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


    OCR Scan     		MPSA55 71fc4142 T-29-21 625mW PDF

    Untitled

    Abstract: No abstract text available
    Text: mi mi SEME BUL58B-SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 11.5 ►f'0^ 3.5 0.25 •SEMEFAB DESIGNED AND DIFFUSED 3.0 •HIGH VOLTAGE •FAST SWITCHING •HIGH ENERGY RATING


    OCR Scan     		BUL58B-SM T0220 300jis PDF

    Untitled

    Abstract: No abstract text available
    Text: SUPERTEX INC blE » fiTTBE'îS DDDaSin 3T1 ISTX AP04 V . Supertex inc. G ate Protected Preliminary 8 Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package BVoss/ BVoos min RDS(ON) (max) •dcon) (min) loss” V|)S =


    OCR Scan     		-100V -250V 18-Lead SOW-20* -160V -15mA AP0416NA AP0416WG AP0416ND -200V PDF

    BUT11A CIRCUIT

    Abstract: BUT11
    Text: BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector Base Voltage Rating Unit 850 V 1000 V 400 V VcES : BUT11 Collector Emitter Voltage Emitter Base Voltage : B UT11A : BUT11


    OCR Scan     		BUT11/11A BUT11 UT11A BUT11 BUT11A BUT11A CIRCUIT PDF

    Untitled

    Abstract: No abstract text available
    Text: BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 233/235/237 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol BD234 Rating VcBO BD236 BD238 Collector Emitter Voltage


    OCR Scan     		BD234/236/238 BD234 BD236 BD238 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC2335 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED, HIGH VOLTAGE SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating U nit Collector-Base Voltage VcB O 500 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage V ebo 7 V


    OCR Scan     		KSC2335 300jis, PDF

    VN0300M

    Abstract: siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25


    OCR Scan     		vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VN0300M siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J PDF

    transistor 400v 3a 40w

    Abstract: 40w electronic ballast BUL45A crossover LE17
    Text: bOE J> • fil331fl7 DDGOSDS b27 « S M L B SEMELAB PLC SEMELAB " T - 3 3 - /Í BUL45A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR M EC H A N IC A L D A T A Dimensions in mm Designed for use in electronic ballast


    OCR Scan     		fil331fl7 300jiS transistor 400v 3a 40w 40w electronic ballast BUL45A crossover LE17 PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR 58E ]> fÜHARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM450 D, R, H • M3GES71 D04S741 737 H H A S 2N7297D, 2N7297R 2N7297H December 1992 Radiation Hardened N-Channel Power MOSFETs Features • 10A, 500V, RDS(on) > 0.600Q


    OCR Scan     		FRM450 M3GES71 D04S741 2N7297D, 2N7297R 2N7297H 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    MPS3638

    Abstract: MPS3638A
    Text: G E SO LID QÌ S TA TE 3875081 6 E SOLID STATE pF|3fl?SQfil O D l T T T ñ D ï~~ 01E 17978 D Signal MPS3638, MPS3638A Silicon Transistors


    OCR Scan     		MPS3638, MPS3638A MPS3638 -50mA, -300mA, -30mA) -10mA MPS3638A PDF

    UDC100

    Abstract: SSR201 FC10010
    Text: SSR201 OCT/61 SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 20 AMP 100 VOLTS POSITIVE CENTERTAP SCHOTTKY RECTIFIER Designer’s Data Sheet FEATURES: • ■ ■ ■ ■ ■ ■


    OCR Scan     		670-SSDI SSR201 OCT/61 UDC100 FC10010 PDF