TRANSISTOR 5BP Search Results

transistor bfr96

Abstract: BFR96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola
Contextual Info: MOTOROLA Order this document by BFR96/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state–of–the–art microwave transistor chip which features fine–line geometry, ion–implanted arsenic emitters and gold

transistor 2n1141

Abstract: MOTOROLA 2n2218 TRANSISTOR 2N1141 beta of 2n2218 2N2218 AN139A
Contextual Info: Order this document by AN139A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN139A Understanding Transistor Response Parameters Prepared by: Roy Hejhall Applications Engineering This note explains high–frequency transistor response parameters and discusses their interdependance. Useful

3N128

Contextual Info: Order this document by 3N128/D MOTOROLA M SEMICONDUCTORS P.O. BOX 20912 • PHOENIX, ARIZONA 85036 SILICON N-CHANNEL MOS FIELD-EFFECT TRANSISTOR N-CHANNEL MOS FIELD-EFFECT TRANSISTOR . . . designed for VHF amplifier and oscillator applications in com­ munications equipment.

TP3024B

Abstract: motorola rf Power Transistor tp3024
Contextual Info: MOTOROLA Order this document by TP3024B/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TP3024B The TP3024B is a balanced transistor designed specifically for use in cellular radio systems. This device permits the design of a Class AB push–pull, high

MRF942

Abstract: NF50
Contextual Info: Order this data sheet by MRF942/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF942 The RF Line NPN Silicon Low Noise, High-Frequency Transistor IC = 40 mA LOW NOISE HIGH FREQUENCY TRANSISTOR . . designed for use in high gain, low noise small-signal amplifiers. This device features

bip 373

Contextual Info: Order this data sheet by MJE8503A/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information SW ITCHM ODE S e rie s M JE8503A Motorola Preferred Device NPN Bipolar Pow er Transistor The MJE8503A transistor is designed for high voltage, high speed, power switching in

pm2222a

Abstract: pm2222 pzt222a PZT2222AT1 PZT2222AT3 PZT2907AT1 QS 100 NPN Transistor MARK WAW
Contextual Info: MOTOROU Order this document by P~2222AT1/D SEMICONDUCTOR TECHNICAL DATA NPN Siiicon Planar Epitmia[ Transistor PzT222aTl Motorola PrsferredDevlcs This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is

sot-223 body marking D K Q F

Contextual Info: Order this data sheet by BCP69T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP69T1 PNP Silicon Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for

sot-223 body marking D K Q F

Contextual Info: Order this data sheet by BSP62T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP62T1 PNP Silicon Epitaxial Transistor Motorola Preferred Device This PNP small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the

u92 surface mount u92 transistor

Abstract: t2406 MOTOROLA
Contextual Info: Order this data sheet by MMFT2406T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor M M FT2406T1 N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high

MR918

Abstract: ar317 MJF16010A AN-952 AM503 AN875 MUR8100 P6302 AN952 F-14E
Contextual Info: MOTOROLA SC IME D I XSTRS/R F b3b?2SM 0QCID4M5 0 | Order this data sheet by MJF16010A/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA r - 3 3 ~ i/ Designer's Data Sheet MJF16010A Full Pak IMPN Silicon Power Transistor POWER TRANSISTOR 15 AM PERES 500 VOLTS 50 WATTS

MRF966

Abstract: MRF9661 HP8970A HP11590B mrf9661 motorola TRANSISTOR 318a Eaton 2075 TRANSISTOR MPS A72 2f 1001 MRFG9661R
Contextual Info: Order this document by MRFG9661/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9661 MRFG9661R Advance Information The RF Line N-Channel Dual-Gate GaAs Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion m ode dual-gate M E S FET designed for high frequency amplifier

sot-223 body marking D K Q F

Abstract: sot223 p2f
Contextual Info: »•üysüM, Order this data sheet by PZT2907AT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed

motorola 304

Abstract: MRFG9801 MRFG9801R hp89 HP8970A dual-gate K31S HP11590B Eaton 2075
Contextual Info: Order this document by MRFG9801/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9801 MRFG9801R Advance Information The RF Line N-Channel Dual-Gate G a A s Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion mode dual-gate MES FET designed for high frequency amplifier

ad1172

Abstract: MRA1300-10L C71537
Contextual Info: Order this data sheet by MRA1300-10L/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Line M icrow ave Linear Pow er Transistor 8.0 dB 1300-1400 MHz 10 WATTS MICROWAVE LINEAR POWER TRANSISTOR . . . designed prim arily for w ideband, large-signal output and driver am plifier stages in

BSP62T1

Contextual Info: Order this data sheet by BSP62T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP62T1 PNP Small-Signal Darlington Transistor M o to ro la P referre d D evice This PNP small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The

FT960

Contextual Info: Order this data sheet by MMFT960T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent-M ode Silicon G ate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as

mrf226

Abstract: Allen-Bradley cb MRF-226 15MH K200 8-32NC-2 TRANSISTOR c 5568 TRANSISTOR motorola 838
Contextual Info: Order this document by MRF226/D MRF226 The RF Line 13 W — 225 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . designed fo r 12.5 V o lt large-signal power am plifier applications in com m unication equipm ent operating at 225 MHz. Ideally suited

Contextual Info: Order this data sheet by BCP68T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP68T1 NPN Silicon Epitaxial Transistor M o to ro la P referre d D evice This NPN Silicon Epitaxial Transistor is designed for use in low voltage, hi current applications. The device is housed in the SOT-223 package, which is

transistor motorola 114-8

Abstract: MRF861 2n2222 npn transistor motorola s 114-8 2N2222 SOA power transistor 2n2222 motorola 114-8
Contextual Info: Order this data sheet by MRF861/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF861 NPN Silicon RF Power Transistor M otorola Preferred Device CLASS A 800-960 MHz 27 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier

MPS 4355 transistor

Abstract: MM8009 mps 0737
Contextual Info: Order this document by MM8009/D MM8009 The RF Line 0.9 W - 1.0 G H z R F POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTOR . . . designed fo r am plifier, frequency m ultiplier, or oscillator applica­ tions in m ilitary and industrial equipment. Suitable for use as output,

Contextual Info: O rder th is data sheet MOTOROLA b y M SD1819A-RT1/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon G eneral Purpose A m plifier Transistor MSD1819A-RT1 MSD18 1 9A-ST1 M o to r o la P re fe rre d D e v ic e s This NPN Silicon Epitaxial Planar Transistor is designed for general purpose

mm4018

Contextual Info: Order this document by MM4018/D M M é lk aWmà tl%Æ!l9émÈË Æ m W m % Ê 0f * The RF Line PIMP SILICON RF POWER TRANSISTOR PIMP SILICON RF POWER TRANSISTOR . . . designed for amplifier, frequency multiplier or oscillator appli­ cations in military and industrial equipment. Suitable for use as

DIODE 40c 0649

Abstract: MJ100B3D45
Contextual Info: M O T O R O L A SC SbE D XSTRS/R F O rder th is data sheet by MJ100B3D45/D b 3 b 7 E S 4 QD^lEflt. D MOTOROLA SEMICONDUCTOR TECHNICAL DATA m € NPN Silicon Power Transistor Module Energy M anagem ent Series DUAL DARLINGTON POWER TRANSISTOR 100 AMPERES 450 VOLTS