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ATP Electronics Inc FT960GP48APHBYC NVME GEN4 M.2 2280 SED EMBEDDED
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DigiKey	FT960GP48APHBYC	Tray			30	1 - 10 - 100 $197.465 1000 $197.465 10000 $197.465	Buy Now
Samtec Inc DW-02-13-F-T-960 FLEXIBLE BOARD STACKING HEADER W Free Sample
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DigiKey	DW-02-13-F-T-960	Bulk			1	1 $3.81 10 $3.81 100 $3.81 1000 $3.81 10000 $3.81	Buy Now
Samtec Inc DW-15-13-F-T-960 FLEXIBLE BOARD STACKING HEADER W Free Sample
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DigiKey	DW-15-13-F-T-960	Bulk			1	1 $16.09 10 $16.09 100 $16.09 1000 $16.09 10000 $16.09	Buy Now
Samtec Inc DW-28-13-F-T-960 FLEXIBLE BOARD STACKING HEADER W Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DW-28-13-F-T-960	Bulk			1	1 $26.86 10 $26.86 100 $26.86 1000 $26.86 10000 $26.86	Buy Now
Samtec Inc DW-30-13-F-T-960 FLEXIBLE BOARD STACKING HEADER W Free Sample
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DigiKey	DW-30-13-F-T-960	Bulk			1	1 $28.58 10 $28.58 100 $28.58 1000 $28.58 10000 $28.58	Buy Now

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FT960 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BC337 BC547 Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the	Original	PDF	MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
N-Channel JFET FETs Abstract: ft960 Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17 Text: ON Semiconductor Field Effect Transistors and Power TMOS MOSFETs ¨ Field Effect Transistors Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole and Surface Mount Packages. Applications include generalpurpose amplified, switches and choppers, and RF amplifiers and mixers. These devices are	Original	PDF	O-226AA O-220AB MTP6P20E MTP12P10 OT-223) MTP50P03HDL MMFT960T1 FT960 N-Channel JFET FETs Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17
E3P102 Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.	Original	PDF	DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
BC517 spice model Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information	Original	PDF	VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
FT960 Abstract: MMFT960T1 MMFT960T3 SMD310 Text: MOTOROLA Order this document by FT960T1/D SEMICONDUCTOR TECHNICAL DATA FT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for	Original	PDF	MMFT960T1/D MMFT960T1 FT960 MMFT960T1 MMFT960T3 SMD310
ft960 Abstract: MMFT960T1 MMFT960T1G A1 SOT-223 MOSFET Text: FT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc−dc converters, solenoid and relay drivers. The device is housed in the SOT−223	Original	PDF	MMFT960T1 OT-223 OT-223 MMFT960T1/D ft960 MMFT960T1 MMFT960T1G A1 SOT-223 MOSFET
TSOP 48 thermal resistance Abstract: BC237 Transistor BC107b motorola transistor 2N3819 BCY72 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA FT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as	Original	PDF	MMFT96218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 TSOP 48 thermal resistance BC237 Transistor BC107b motorola transistor 2N3819 BCY72
BC547 sot package sot-23 Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the	Original	PDF	MDC5000T1 MDC5001T1 MDC3105LT1 BC547 sot package sot-23 BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
FT960 Abstract: ft960 sot-223 MMFT960T1 MMFT960T1G A1 SOT-223 MOSFET Text: FT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc−dc converters, solenoid and relay drivers. The device is housed in the SOT−223	Original	PDF	MMFT960T1 OT-223 OT-223 MMFT960T1/D FT960 ft960 sot-223 MMFT960T1 MMFT960T1G A1 SOT-223 MOSFET
Untitled Abstract: No abstract text available Text: FT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc−dc converters, solenoid and relay drivers. The device is housed in the SOT−223	Original	PDF	MMFT960T1 MMFT960T1/D
MMBF4856 Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the	Original	PDF	226AA) 226AE) MMSD1000T1 236AB MMBF0201NLT1 MMBF0202PLT1 MMBF4856 pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
FT960 Abstract: MMFT960T1 SMD310 Text: FT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N–Channel SOT–223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc–dc converters, solenoid and relay drivers. The device is housed in the SOT–223	Original	PDF	MMFT960T1 r14525 MMFT960T1/D FT960 MMFT960T1 SMD310
TRANSISTOR LWW 20 Abstract: TRANSISTOR LWW 17 Text: MMDF3N02HD Preferred Device Power MOSFET 3 Amps, 20 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the	Original	PDF	MMDF3N02HD TRANSISTOR LWW 20 TRANSISTOR LWW 17
ft960 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA FT960T1 Medium Pow er Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power sw itching a pplications such as	OCR Scan	PDF	OT-223 MMFT960d MMFT960T1 ft960

Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS on = 1-7 OHM MAX This TMOS medium power field effect transistor is designed for	OCR Scan	PDF	OT-223
T6661 Abstract: ft960 t2406 MOTOROLA T2406 ft107 ft107 sot-223 MARKING I5 MMFT6661T1 Text: SOT-223 DEVICES continued Small-Signal TMOS FETs The following is a listing of small-signal surface mount T M O S FETs which exhibit low Ros(on) characteristics. Pinout: 1-Gate, 2-Drain, 3-Source, 4-Drain Device Switching Time VGS(th) R oS (on) Marking Ohm	OCR Scan	PDF	OT-223 MMFT960T1 MMFT6661T1 MMFT2406T1 MMFT107T1 FT960 T6661 T2406 FT107 t2406 MOTOROLA ft107 sot-223 MARKING I5
sot223, 31 64 Abstract: No abstract text available Text: 1 MOTOROLA Order this document by m m fto o ti/d SEMICONDUCTOR TECHNICAL DATA FT960T1 Medium Power Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS	OCR Scan	PDF	OT-223 MMFT960T1/D sot223, 31 64
t6661 Abstract: ft960 marking 6Z SOT23 702 sot23 sot 23 70.2 sot-23 mosfet Marking SA s 6z sot223 marking marking 6Z 25 marking 6z sot Text: SMALL-SIGNAL TMOS MOSFETs continued CASE 318-07 (TO-236AB) SOT-23 STYLE 22 CASE 318E-04 (TO-261AA) SOT-223 STYLE 6 Table 18 — Surface Mount TMOS MOSFETs The follow ing is a listing of sm all-sig na l surface m ount T M O S MO SFETs. Case 318-07 — TO-236AB (SOT-23) — N-Channel	OCR Scan	PDF	O-236AB) OT-23 318E-04 O-261AA) OT-223 O-236AB OT-23) MMBF170LT1 BSS123LT1 2N7002LT1 t6661 ft960 marking 6Z SOT23 702 sot23 sot 23 70.2 sot-23 mosfet Marking SA s 6z sot223 marking marking 6Z 25 marking 6z sot
FT960 Abstract: No abstract text available Text: Order this data sheet by FT960T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent-M ode Silicon G ate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as	OCR Scan	PDF	MMFT960T1/D OT-223 FT960
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA FT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS on = 1.7 OHM MAX This TMOS medium power field effect transistor is designed for	OCR Scan	PDF	MMFT960T1 OT-223 b3b7255

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FT960 Price and Stock

ATP Electronics Inc FT960GP48APHBYC

Samtec Inc DW-02-13-F-T-960

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FT960 Datasheets Context Search

BC337 BC547

N-Channel JFET FETs

E3P102

BC517 spice model

FT960

ft960

TSOP 48 thermal resistance

BC547 sot package sot-23

FT960

Untitled

MMBF4856

FT960

TRANSISTOR LWW 20

ft960

Untitled

T6661

sot223, 31 64

t6661

FT960

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