TRANSISTOR 50 MHZ Search Results

Contextual Info: LDMOS RF Power Transistor 50 Watts, 800-1000 MHz, 26 Volts LD0810-50 LD0810-50 Preliminary Specifications LDMOS RF Power Transistor 50 Watts, 800-1000 MHz, 26V Features • • • • • • • Outline Drawing New LDMOS Technology Broadband Class AB Operation

transistor BV-1 501

Abstract: smd 501 transistor C5750X7R1H106M 30RF35 BLF6G38-50 BLF6G38LS-50 RF35 VJ1206Y104KXB
Contextual Info: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 01 — 12 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1.

Contextual Info: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 02 — 1 June 2010 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance

30RF35

Abstract: BLF6G38-50 BLF6G38LS-50 C5750X7R1H106M RF35 VJ1206Y104KXB
Contextual Info: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 02 — 1 June 2010 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance

HF250-50

Abstract: ASI10615 250WPEP
Contextual Info: HF250-50 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 0.550 4L FLG The ASI HF250-50 is a 50 V epitaxial silicon NPN transistor, designed for SSB communications. E FEATURES: • PG = 14 dB min. at 250 W/30 MHz • IMD3 = 150 dBc max. at 250 W PEP

Contextual Info: HF250-50 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 0.500 4L FLG The ASI HF250-50 is a 50 V epitaxial silicon NPN transistor, designed for SSB communications. .112x45° L A E FULL R FEATURES: C Ø.125 NOM. C • PG = 14 dB min. at 250 W/30 MHz

HF220-50

Abstract: ASI10614
Contextual Info: HF220-50 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF220-50 is a 50 V epitaxial silicon NPN transistor, designed for SSB communications. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 13 dB Typical at 220 W/30 MHz • IMD3 = -30 dBc Max. at 220 W PEP

Contextual Info: 2N5087 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO=50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO VcEO Vebo lc Po Tj Tstg 50 50 3 50 625

amplifier 50 50W

Abstract: uhf power transistor 50W UHF TRANSISTOR UHF amplifier module BAL0105-50 50w transistor
Contextual Info: GAE GREAT AMERICAN ELECTROINCS BAL0105-50 Silicon NPN high power UHF transistor BAL0105-50 transistor assembly is designed for wideband push-pull power, large signal output, and driver amplifier stages in the 100-500 Mhz frequency range. Suitable for use in A, AB, B, C

BUH51

Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 UHC-400
Contextual Info: ON Semiconductor BUH51 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS The BUH51 has an application specific state–of–art die designed for use in 50 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large

BUH51

Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: ON Semiconductort BUH51 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS The BUH51 has an application specific state–of–art die designed for use in 50 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large

Contextual Info: ON Semiconductor BUH51 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS The BUH51 has an application specific state−of−art die designed for use in 50 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large

Contextual Info: KST5086/5087 PNP EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit -50 -50 -3 -50 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage

transistor 502

Abstract: Rogers 4350B 4350B BLD6G21L-50 BLD6G21LS-50 Doherty amp doherty combiner 2110 transistor BLD6G22L-150BN/2 BLD6G22LS-50,112
Contextual Info: BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 02 — 18 March 2010 Objective data sheet 1. Product profile 1.1 General description The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using

BLD6G21L-50

Abstract: BLD6G21LS-50 4350B
Contextual Info: BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution

Contextual Info: BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 3 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using

smd 501 transistor

Abstract: smd transistor 501 BLD6G21LS-50 SOT1130A TD-SCDMA TRANSISTOR 2025 4350B BLD6G21L-50 Rogers 4350B 123J capacitor
Contextual Info: BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev. 01 — 28 October 2009 Objective data sheet 1. Product profile 1.1 General description The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution

BLD6G22L-150BN/2

Abstract: BLD6G22L 4350B capacitor 82j 076MM BLD6G22L-150BN/BLD6G22L
Contextual Info: BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 3 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using

Contextual Info: ERICSSON ^ PTB 20004 50 Watts, 860 - 900 MHz Cellular Radio RF Power Transistor Description Key Features The 20004 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the860-900 MHz frequency band. It is rated at 50 Watts minimum output power

smd 501 transistor

Contextual Info: BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 01 — 15 December 2009 Objective data sheet 1. Product profile 1.1 General description The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using

PB5350

Abstract: transistor marking c y pb5350 PBSS5350Z PNP TRANSISTOR SOT223 PBSS4350Z SC73 pb535 PBSS5350Z,135/NEXPERIA
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS5350Z 50 V low VCEsat PNP transistor Product specification Supersedes data of 2003 Jan 20 2003 May 13 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350Z FEATURES

PB5350

Abstract: PBSS4350Z PBSS5350Z pb535
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS5350Z 50 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Nov 13 2003 Jan 20 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350Z FEATURES

pb4350

Abstract: pbss4350z PBSS5350Z pb435
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 PBSS4350Z 50 V low VCEsat NPN transistor Product specification Supersedes data of 2003 Jan 20 2003 May 13 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350Z FEATURES

PB4350

Abstract: PBSS5350Z PBSS4350Z
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 PBSS4350Z 50 V low VCEsat NPN transistor Product specification Supersedes data of 2001 Jul 13 2003 Jan 20 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor PBSS4350Z FEATURES