TRANSISTOR 4120 Search Results

2SC5170

Abstract: LE300 mitsubishi vcb transistor Common Base amplifier common base amplifier circuit DUAL TRANSISTOR
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5170 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5170 is a silicon NPN epitaxial type transistor. It is designed for

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

2SA1444 equivalent

Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
Contextual Info: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

NDS9410A

Contextual Info: May 1996 National Semiconductor" NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

Motorola 2N6083

Abstract: sem 2106 2N6083
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3tj?2S4 00^4120 MOTOROLA Ô MOTb T -3 5 ~ u • SEM ICONDUCTOR i TECHNICAL DATA 2N6083 The R F Line 30 W - 175 MHz 2 RF POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTORS . . . designed for 1 2.5 V o lt V H F large-signal am plifier applications

C11892E

Abstract: 2SJ495 TEA-1035 A3856 m30 tf 125
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channel MOS Field Effect Transistor in millimeter designed for high current switching applications. 10.0 ± 0.3

C11892E

Abstract: TEA-1037 D1297
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in m illim eter T his product is P-Channel MOS Field Effect Transistor designed for high current switching applications.

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in m illim eter This product is P-Channel MOS Field E ffect Transistor designed for high current switching applications.

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

Contextual Info: Extract from the online catalog DEK-TR/INV Order No.: 2964319 Inverter module. The inverter module inverts the signals of ground switching n-p-n transistor outputs into plus switching p-n-p outputs,

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

Contextual Info: CEP72A3/CEB72A3 Sep. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 30V , 75A , RDS ON =6.0m Ω @VGS=10V. RDS(ON)=9.0m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.

IRFF9230

Abstract: TA17512
Contextual Info: IRFF9230 Data Sheet February 1999 -4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET File Number 2225.2 Features • -4.0A, -200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IN5343

Contextual Info: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages to 500 MHz. • P ush-P ull Configuration Reduces Even Numbered Harmonics

Contextual Info: Extract from the online catalog EMG 22-REL/KSR-G 24/TRN 5 Order No.: 2949787 The illustration shows version EMG 22,5 REL, with integrated n-p-n transistor control Relay module, with miniature switching relay, with integrated NPN

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

5N80

Abstract: SMP40N10
Contextual Info: fX * Silico n ix SMP40N10 in c o r p o r a te d N-Channel Enhancement Mode Transistor TO-22QAB TO P VIEW PRODUCT SUMMARY 1 GATE 2 DRAIN Connected to TAB 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25 C Unless Otherwise Noted) PAR AMETERS/TEST CO NDITIONS Gate-Source Voltage

BUZ42

Contextual Info: B U Z42 33 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T O -2 2 0 A B • 4.0A, 500V TOP VIEW • rDS on = 2 .0 il • SOA is Power-Dissipation Limited DRAIN (FLANGE) • Nanosecond Switching Speeds u • Linear Transfer Characteristics