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    5N80 Search Results

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    5N80 Price and Stock

    Vishay Siliconix SIHB15N80AE-GE3

    MOSFET N-CH 800V 13A D2PAK
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    DigiKey SIHB15N80AE-GE3 Tube 1,065 1
    • 1 $3.43
    • 10 $3.43
    • 100 $3.43
    • 1000 $1.17547
    • 10000 $1.1
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    STMicroelectronics STB15N80K5

    MOSFET N CH 800V 14A D2PAK
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    DigiKey STB15N80K5 Digi-Reel 1,054 1
    • 1 $6.14
    • 10 $4.119
    • 100 $6.14
    • 1000 $2.48382
    • 10000 $2.48382
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    STB15N80K5 Cut Tape 1,054 1
    • 1 $6.14
    • 10 $4.119
    • 100 $6.14
    • 1000 $2.48382
    • 10000 $2.48382
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    STB15N80K5 Reel 1,000 1,000
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    • 1000 $2.41212
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    Avnet Americas STB15N80K5 Reel 14 Weeks 1,000
    • 1 -
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    • 100 -
    • 1000 $2.41213
    • 10000 $2.29726
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    Mouser Electronics STB15N80K5 783
    • 1 $5.16
    • 10 $3.66
    • 100 $2.73
    • 1000 $2.41
    • 10000 $2.41
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    Newark STB15N80K5 Cut Tape 1,551 1
    • 1 $5.68
    • 10 $4.86
    • 100 $4.03
    • 1000 $3.64
    • 10000 $3.64
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    STMicroelectronics STB15N80K5 783 1
    • 1 $5.06
    • 10 $3.59
    • 100 $2.68
    • 1000 $2.37
    • 10000 $2.37
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    Avnet Silica STB15N80K5 15 Weeks 1,000
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    EBV Elektronik STB15N80K5 15 Weeks 1,000
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    Win Source Electronics STB15N80K5 56,000
    • 1 -
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    • 100 $2.1676
    • 1000 $2.0009
    • 10000 $2.0009
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    STMicroelectronics STP25N80K5

    MOSFET N-CH 800V 19.5A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STP25N80K5 Tube 1,000 1
    • 1 $4.62
    • 10 $4.62
    • 100 $2.6526
    • 1000 $2.6526
    • 10000 $2.6526
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    Avnet Americas STP25N80K5 Tube 14 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.65263
    • 10000 $2.52631
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    Mouser Electronics STP25N80K5 791
    • 1 $3.5
    • 10 $3.5
    • 100 $2.66
    • 1000 $2.65
    • 10000 $2.58
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    Newark STP25N80K5 Bulk 1,125 1
    • 1 $4.31
    • 10 $4.04
    • 100 $3.48
    • 1000 $3.29
    • 10000 $3.29
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    STMicroelectronics STP25N80K5 791 1
    • 1 $3.43
    • 10 $3.43
    • 100 $2.61
    • 1000 $2.61
    • 10000 $2.61
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    Bristol Electronics STP25N80K5 2,000
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    Ameya Holding Limited STP25N80K5 8,384
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    Avnet Silica STP25N80K5 15 Weeks 50
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    EBV Elektronik STP25N80K5 15 Weeks 50
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    Vishay Siliconix SIHA15N80AE-GE3

    MOSFET N-CH 800V 6A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHA15N80AE-GE3 Tube 973 1
    • 1 $3.32
    • 10 $2.162
    • 100 $3.32
    • 1000 $1.13062
    • 10000 $1.05125
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    STMicroelectronics STW25N80K5

    MOSFET N-CH 800V 19.5A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STW25N80K5 Tube 555 1
    • 1 $7.11
    • 10 $7.11
    • 100 $4.09133
    • 1000 $2.93939
    • 10000 $2.93425
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    Mouser Electronics STW25N80K5 1,165
    • 1 $6.45
    • 10 $6.45
    • 100 $3.25
    • 1000 $2.93
    • 10000 $2.93
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    STMicroelectronics STW25N80K5 1,165 1
    • 1 $6.32
    • 10 $6.32
    • 100 $3.19
    • 1000 $2.88
    • 10000 $2.88
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    Avnet Silica STW25N80K5 600 17 Weeks 30
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    Chip1Stop STW25N80K5 Tube 730
    • 1 $5.02
    • 10 $4.66
    • 100 $3.12
    • 1000 $2.75
    • 10000 $2.75
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    Win Source Electronics STW25N80K5 35,200
    • 1 -
    • 10 $5.0164
    • 100 $3.3442
    • 1000 $3.3442
    • 10000 $3.3442
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    5N80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N80 Preliminary Power MOSFET 5 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET. It use UTC advanced technology to provide avalanche rugged technology and low gate charge.


    Original
    PDF QW-R502-483

    5N80

    Abstract: UTC5N80 MOSFET 400V TO-220 N-Channel mosfet 400v 25A
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N80 Preliminary Power MOSFET 5 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 5N80 is a N-channel enhancement mode Power MOSFET. It use UTC advanced technology to provide avalanche rugged technology and low gate charge.


    Original
    PDF QW-R502-483 5N80 UTC5N80 MOSFET 400V TO-220 N-Channel mosfet 400v 25A

    5n80

    Abstract: SMPS 30v
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N80 Preliminary Power MOSFET 5A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET. It use UTC advanced technology to provide avalanche rugged technology and low gate charge.


    Original
    PDF QW-R502-483 5n80 SMPS 30v

    5n80

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N80 Power MOSFET 5A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET. It use UTC advanced technology to provide avalanche rugged technology and low gate charge. It can be applied in high current, high speed switching, switch


    Original
    PDF 5N80L-TA3-T QW-R502-483 5n80

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5N80Z Preliminary Power MOSFET 5A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N80Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original
    PDF 5N80Z 5N80Z QW-R209-065

    AEC-Q200-002

    Abstract: RFLW5N1500
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Inductors - Wire Bondable, Spiral for RF Circuits I INNOVAT AND TEC O L OGY RFLW N HN RF INDUCTOR O 19 62-2012 Vishay Electro-Films Wire Bondable RF Spiral Inductor Key Benefits • • • • • • •


    Original
    PDF RFLW5N1200A RFLW5N8000B RFLW5N1500A RFLW5N1000A 100is 102See 122See 21-Apr-11 AEC-Q200-002 RFLW5N1500

    2N80

    Abstract: 5P30
    Text: . DIP & SMD DELAY LINES o FlO TAPS •14PIN &IS PIN PACKAGES F DIPS SURFACE MOUNTING*G LEADS PASSIVE SERIES SERIES DIP-14 AND DIP-G14* J4 J3 12 11, 10 i * Surface M ount G Lead Package ,8 IM PEDANCE ± 1 0 % - - 1 2 3 4 5 6 7 _2 8 5 _ _


    OCR Scan
    PDF DIP-14 DIP-G14* 2N100 3KI33 3N100 5N100 2N80 5P30

    Untitled

    Abstract: No abstract text available
    Text: REVISIONS SYM 1 .2 5 4 4 B C D [3 1 .8 5 ]- [R 0.25] TYP. R .010 IZ T F T - AmpJwi -l= ] ][' [J .I I I -1- 1 -1 - L r = L ianolL EON, ZO NE ERN NO. PROPOSAL A APPRD. LCHAN CHANGE CONTACT TAIL FORMING FIGURE APR.24,07 LCHAN PER NOV 6 /0 7


    OCR Scan
    PDF E07215

    5n80

    Abstract: SSH5N70 250M SSH5N80
    Text: N-CHANNEL POWER MOSFETS 5N80/70 FEATURES • Lower Rds ON • Improved inductive ruggedness • Fast switching times ■ Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan
    PDF SSH5N80/70 SSH5N80 SSH5N70 0G2A34S 5n80 250M

    2N25

    Abstract: 5n50 5n30 SMD 1N60 esc 5p20 5N35 3N25 5P30 5N80 3N45
    Text: E S C ELECTRONICS CORP SOE D • 3037257 OOODMÖLi T57 MECE □IP &SMD DELAY LINES SERIES D IP -14 IO TAPS •14 PIN & 16 PIN PACKAGES □IP Si SURFACE MOUNTINB *Q LEADS PASSIVE SERIES '% H i ¡7 T -H 7 - 13 AND DIP-G14* * Surface Mount G Lead Package IMPEDANCE ± 10%


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    PDF DIP-14 DIP-G14 300atthe\ 100PCEN G1N25. 1N100 2N100 3N100 5N100 2N25 5n50 5n30 SMD 1N60 esc 5p20 5N35 3N25 5P30 5N80 3N45

    Untitled

    Abstract: No abstract text available
    Text: □IP & SM D DELAY LINES 10TAPS 14PIN S. IB PIN PACKAGES □IP SlSURFACE MOUNTING*GLEADS PASSIVE SERIES SERIES DIP-14 AND DIP-G14* * Surface Mount G Lead Package M ]3 12 J1 10 9. 8. IM PEDANCE 1 1 0% • 1 2 3 4 5 6 7 Rite Time n$«c 1 0 * 5% 20 30 40


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    PDF DIP-14 DIP-G14* 015MIN. 3Kl45