oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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TRANSISTOR SMD MARKING CODE 3f
Abstract: transistor smd marking code 3l SMD TRANSISTOR MARKING 3B 3F smd transistor TRANSISTOR SMD MARKING CODE 3K smd transistor 3f smd transistor 3g TRANSISTOR SMD MARKING CODE 3G smd transistor 3K transistor smd 3E
Text: SMD General Purpose Transistor PNP BC856/BC857/BC858 SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data SOT-23 SOT-23, Plastic Package Case: Solderable per MIL-STD-202G, Method 208
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BC856/BC857/BC858
OT-23
OT-23,
MIL-STD-202G,
BC856A
BC857A
BC857B
BC857C
BC858A
BC858B
TRANSISTOR SMD MARKING CODE 3f
transistor smd marking code 3l
SMD TRANSISTOR MARKING 3B
3F smd transistor
TRANSISTOR SMD MARKING CODE 3K
smd transistor 3f
smd transistor 3g
TRANSISTOR SMD MARKING CODE 3G
smd transistor 3K
transistor smd 3E
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3Kp Transistor
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BCV62 PNP general purpose double transistor Product specification File under Discrete Semiconductors, SC04 1997 Jun 18 Philips Semiconductors Product specification PNP general purpose double transistor
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M3D071
BCV62
BCV62
OT143B
BCV61.
BCV62As,
SCA54
117047/00/02/pp8
3Kp Transistor
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BCV61
Abstract: BCV62 BCV62A BCV62B BCV62C
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BCV62 PNP general purpose double transistor Product specification Supersedes data of 1997 Jun 18 1999 Apr 08 Philips Semiconductors Product specification PNP general purpose double transistor FEATURES BCV62 PINNING
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M3D071
BCV62
OT143B
BCV61.
SCA63
115002/00/03/pp8
BCV61
BCV62
BCV62A
BCV62B
BCV62C
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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DTC323TK
Abstract: No abstract text available
Text: DTC323TK Digital transistor, NPN, with 1 resistor Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • • package marking: DTC323TK; H02 in addition to standard features of digital transistor, this transistor has: — low collector saturation voltage,
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DTC323TK
SC-59)
DTC323TK;
DTC323TK
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b 'lE ]> bb53^3J 0 0 3 m i 7 251 « A P X Product Specification Philips Semiconductors BUK856-800A Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated gate bipolar power transistor in a
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BUK856-800A
PINNING-TO220AB
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acrian RF POWER TRANSISTOR
Abstract: Acrian s 46120 BVces Scans-00115701
Text: 0182998 ACRIAN INC dFJ T~~ 3Jt~s/ 0DP1531 1 46120 GENERAL DESCRIPTION 20 WATTS - 28 VOLTS 1000 MHz The 46120 is a stable common emitter transistor capable of providing 20 watts of CW RF output power across the 500-1000 MHz frequency band. This transistor is specifically designed
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0Dpi53i
100mA
acrian RF POWER TRANSISTOR
Acrian
s 46120
BVces
Scans-00115701
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Untitled
Abstract: No abstract text available
Text: s tim m m an A M P com pany Radar Pulsed Power Transistor, 100W, 3jis Pulse, 30% Duty 1 .1 -1.3 GHz PH1113-100 V2.00 Features • • • • • • • • NPN Silicon Microwave Power Transistor Com m on Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geom etry
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PH1113-100
TT5QM50A
ATC100A
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NEX2301
Abstract: NEX2303 NEX2300 NEX230187 NEX2302 NEX230265 NEX230365
Text: N E C / CALIFORNIA NEC 1SE b42?m4 D 0001202 S .7 -3 3 r< 3 3 -o * NEX2300 SERIES 2.3 GHz POWER OSCILLATOR TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIG H POWER: 3.2 W AT 2.3 GHz The NEX2300 series is an NPN transistor using NEC’s ad vanced Stepped Electrode Transistor SET structure with
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NEX2300
NEX2300
NEX2301
NEX2302
NEX2303
NEX230365
NEX230187
NEX230265
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Untitled
Abstract: No abstract text available
Text: 2SD2385 TO SHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 2SD2385 POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : VcEO = 140V (Min.) Complementary to 2SB1556 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SD2385
2SB1556
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Untitled
Abstract: No abstract text available
Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 PHILIPS BUK 475-400B PowerMOS transistor INTERNATIONAL SbE i- 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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475-400B
711002b
D044b4*
BUK475-400B
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3Kp Transistor
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BCV62 PNP general purpose double transistor Product specification Supersedes data of 1997 Jun 18 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification PNP general purpose double transistor
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BCV62
T143B
BCV61.
115002/00/03/pp8
3Kp Transistor
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP8N50E GENERAL DESCRIPTION PHX5N50E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable
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PHP8N50E
PHX5N50E
OT186A
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Untitled
Abstract: No abstract text available
Text: HN3G01J TOSHIBA TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR H N ^ m i HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. MAXIMUM RATINGS Ta = 25°C
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HN3G01J
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Automotive applications, Switched Mode Power Supplies SMPS , motor control,
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BUK475-60H
PINNING-SOT186A
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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d 998 transistor circuit
Abstract: No abstract text available
Text: Philips Semiconductors Product specification T renchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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BUK9524-55
T0220AB
d 998 transistor circuit
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Response AA0482
Abstract: 49/Response AA0482
Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this
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DSP56303
Response AA0482
49/Response AA0482
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2SC3569
Abstract: No abstract text available
Text: NPN SILICON POWER TRANSISTOR 2SC3569 DESCRIPTION The 2SC3569 is NPN silicon epitaxial transistor designed for switching regulator, DC-DC converter and high frequency power in millimeters inches amplifier application. FEATURES 10 .5 M AX. (0 .4 1 3 M A X.)
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2SC3569
2SC3569
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2SC3046
Abstract: transistor ITT
Text: January 1990 Edithn 1.1 FUjlTSU PRODUCT PROFILE 2SC3046 Silicon High Speed Power Transistor DESCRIPTION The 2SC3046 is a silicon NPN planar general purpose, high power switching tran sistor fabricated with Fujitsu's unique Ring Em itter Transistor {R E T technology.
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2SC3046
2SC3046
transistor ITT
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BT816
Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728
Text: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded
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mm/13"
O-92S)
BT816
TA114E
a768
transistor b722
B861
B718
equivalent transistor TT 3034
C785 transistor
b714 transistor
B728
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Helipot
Abstract: JAN2N5431 MIL-STD-750-Test capacitor ttc 342 J3 DIODE ST JANTX2N5431 20.000H unijunction application note
Text: MIL-S-19500/425 USAF 23 Sept 1969 V Mil S Sii CONDUCTOR DEVICE- TRANSISTOR. PN. SILICON. UNIJUNCTION JAN2N5431, and JANTX2N5431 1. SCOPE Scope. - This speciflcation covers the detail requirements for a PN, silicon, unijunction transistor. The prefis "TX” is used
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MIL-S-19500/425
JAN2N5431,
JANTX2N5431
pulse-repe0/425
MIL-S-19500,
MIL-S-19500
Helipot
JAN2N5431
MIL-STD-750-Test
capacitor ttc 342
J3 DIODE ST
JANTX2N5431
20.000H
unijunction application note
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