TRANSISTOR 3440 Search Results

a 4x transistor

Abstract: MOTOROLA TRANSISTOR 318M MBC13900 motorola rf Power Transistor motorola sps transistor
Contextual Info: Freescale Semiconductor, Inc. Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series Freescale Semiconductor, Inc. NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR fτ = 15 GHz The MBC13900 is a high performance transistor fabricated using

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

sot-343 as

Abstract: a 4x transistor MOTOROLA TRANSISTOR SOT-343 318M MBC13900 motorola sps transistor 3AA2
Contextual Info: Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70

Motorola

Abstract: MBC13900 MOTOROLA TRANSISTOR 318M
Contextual Info: Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR fτ = 15 GHz The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70

G-4035

Abstract: g4035 transistor g4035
Contextual Info: r Z 7 Ä T# S G S - R T H O M S O N LESM KS M JE 3440 SILICON NPN TRANSISTOR . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar transistors in SOT-32 plastic package. It is designed tor use in consumer and industrial

2N3440

Abstract: j350 TRANSISTOR 2N3439 transistor 2N 3440 J350 transistor 3440 2N 3440 3439 1010J
Contextual Info: 2N3439 2N3440 NPN SILICON TRANSISTORS TRIPLE DIFFUSED MESA. TRANSISTORS SILICIUM, NPN MESA TRIPLE •DIFFUSES. - High voltage, high frequency response transistor Transistor haute tension à fréquence d'amplification élevée - High voltage, low current, switching applications

transistor C 2290

Abstract: td 1410 NP34N03HLD NP34N03ILD
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP34N03HLD,NP34N03ILD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

MOTOROLA TRANSISTOR

Contextual Info: Freescale Semiconductor, Inc. Order this document by MBC13901PP/D ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Product Preview MBC13901 The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

C5750X7R1H106M

Abstract: 30RF35
Contextual Info: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 01 — 11 November 2008 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1.

Contextual Info: BLF6G38-100; BLF6G38LS-100 WiMAX power LDMOS transistor Rev. 2 — 24 October 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance

TRANSISTOR J601

Abstract: gp816 RF35 J2396 J249
Contextual Info: BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance

motorola sps transistor

Abstract: motorola 572 transistor Motorola 1600 395C-01 sps transistor
Contextual Info: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MOTOROLA TRANSISTOR

Abstract: 55 ic Sot-343 sot-343 as TRANSISTOR MOTOROLA
Contextual Info: Order this document by MBC13901PP/D Product Preview MBC13901 The RF Building Block Series NPN Silicon Low Noise Transistor The MBC13901 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

200E

Abstract: MRF1047 MRF1047T1
Contextual Info: Order this document by MRF1047T1/D NPN Silicon Low Noise Transistor • • • • • RF NPN SILICON TRANSISTOR fτ = 12 GHz NFmin = 1.0 dB ICMAX = 45 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA Low Noise Figure, NFmin = 1.0 dB Typ @1.0 GHz, 3.0 V and 3.0 mA

CM2025

Abstract: w65 transistor npn, transistor, sc 109 b T3D 34 BUV11N transistor 3-440
Contextual Info: MOTOROLA SC XSTRS/R F 15E D I b3b?a54 G O û lflâ B 5 I 7 ^ 3 3 MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA NPN SILICON POWER METAL TRANSISTOR . designed for high speed, high current, high power applications. NPN SILICON POWER METAL TRANSISTOR 20 A M P E R E S

BDX 241

Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
Contextual Info: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide

3440S

Abstract: 2N3440S hFE-10 G-2675
Contextual Info: 2N 3440S EPITAXIAL PLANAR NPN HIGH VOLTAGE AMPLIFIER The 2N 3440S is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case, intended for high voltage sw itching and linear am plifier applications. The complementary PNP type is the 2N 5415S. ABSOLUTE MAXIMUM RATINGS

2N3440S

Contextual Info: 2N 3440S SILICON PLANAR NPN H IG H -V O LTA G E AM PLIFIER The 2N 3440S is a silicon planar epitaxial NPN transistor in Je d ecT O -39 metal case, intend­ ed fo r high voltage switching and linear am p lifie r applications. The com plementaryPNP type is 2N 5415S.

200B

Abstract: MRF5P20180 MRF5P20180R6 motorola mosfet for W-CDMA
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P20180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P20180R6 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET