TRANSISTOR 2SC5359 Search Results

2sa1987 transistor equivalent

Abstract: transistor 2SC5359 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2SA1987 2SC5359 2SA1987 power transistor audio amplifier 100w
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1987 DESCRIPTION •High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V BR CEO= -230V(Min) ·Complement to Type 2SC5359 APPLICATIONS

Contextual Info: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.

transistor 2SC5359

Abstract: 100-W 2-21F1A 2SA1987 2SC5359
Contextual Info: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.

2Sa1987

Contextual Info: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.

100-W

Abstract: 2-21F1A 2SA1987 2SC5359
Contextual Info: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.

Contextual Info: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.

Contextual Info: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.

transistor 2SC5359

Abstract: tr 2sA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2-21F1A 2SA1987 2SA1987 2SC5359
Contextual Info: TO SH IBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm 20.5M AX. • • • High Collector Voltage : VCEO- 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier

transistor 2SC5359

Abstract: 2-21F1A 2SA1987 2SC5359 2SC53
Contextual Info: TOSHIBA 2SC5359 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm POWER AMPLIFIER APPLICATIONS ¿3.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO —230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier

transistor 2SC5359

Abstract: 2-21F1A 2SA1987 2SC5359 tr 2sA1987
Contextual Info: TO SH IBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm 53.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO- 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier

transistor 2SC5359

Abstract: 2SC5359 100-W 2-21F1A 2SA1987
Contextual Info: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Tc = 25°C

transistor 2Sc5359

Abstract: 2SC5359 2SA1987 2SC5359 100-W 2-21F1A 2SA1987
Contextual Info: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Maximum Ratings Tc = 25°C

transistor 2SC5359

Abstract: 2SC5359
Contextual Info: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Tc = 25°C

transistor 2SC5359

Abstract: 2-21F1A 2SA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR
Contextual Info: 2SA1987 TO SH IBA 2 S A 1 987 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm High Collector Voltage : V 0 e q = - 23OV Min. Complementary to 2SC5359 Recommend for 100W High Fidelity Audio Frequency Amplifier

Contextual Info: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Ta = 25°C

transistor 2SC5359

Abstract: 2SC5359
Contextual Info: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Ta = 25°C

Contextual Info: TOSHIBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 3 59 U nit in mm 3.3 + 0.2 2Q.5MAX • • • High Collector Voltage : V q e O = 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier

2SA1987

Abstract: transistor 2SC5359 2-21F1A 2SC5359
Contextual Info: TO SHIBA 2SA1987 2 S A 1 987 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm ¿3.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO——230V (Min. Complementary to 2SC5359 Recommend for 100W High Fidelity Audio Frequency Amplifier

Contextual Info: TOSHIBA 2SA1987 2 S A 1 987 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 3.3 + 0.2 2Q.5MAX • High Collector Voltage : V q e O “ —230V Min. • Complementary to 2SC5359 • Recommend for 100W High Fidelity Audio Frequency Amplifier

Contextual Info: TO SHIBA 2SA1987 2 S A 1 987 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 2 0 .5 M A X . • • • ^ 3 .3 ± 0 .2 High Collector Voltage : V q e O = -2 3 0 V Min. Complementary to 2SC5359 Recommend for 100W High Fidelity Audio Frequency Amplifier

Contextual Info: T O S H IB A 2SC5359 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm POWER AMPLIFIER APPLICATIONS 2 0 .5 M A X . • • • ^ 3 .3 ± 0 .2 High Collector Voltage : V q e O = 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

Contextual Info: , Line. J.E.ii£. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1987 DESCRIPTION • High Current Capability • High Power Dissipation PIN 1.BASE • High Collector-Emitter Breakdown Voltage-

2SC4793 2sa1837

Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
Contextual Info: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y