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    TRANSISTOR 2SC5359 Search Results

    TRANSISTOR 2SC5359 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SC5359 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2sa1987 transistor equivalent

    Abstract: transistor 2SC5359 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2SA1987 2SC5359 2SA1987 power transistor audio amplifier 100w
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1987 DESCRIPTION •High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V BR CEO= -230V(Min) ·Complement to Type 2SC5359 APPLICATIONS


    Original     		2SA1987 -230V 2SC5359 -230V 2sa1987 transistor equivalent transistor 2SC5359 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2SA1987 2SC5359 2SA1987 power transistor audio amplifier 100w PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.


    Original     		2SA1987 2SC5359 PDF

    transistor 2SC5359

    Abstract: 100-W 2-21F1A 2SA1987 2SC5359
    Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.


    Original     		2SA1987 2SC5359 transistor 2SC5359 100-W 2-21F1A 2SA1987 2SC5359 PDF

    2Sa1987

    Abstract: No abstract text available
    Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.


    Original     		2SA1987 2SC5359 2-21F1A 2Sa1987 PDF

    100-W

    Abstract: 2-21F1A 2SA1987 2SC5359
    Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.


    Original     		2SA1987 2SC5359 100-W 2-21F1A 2SA1987 2SC5359 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.


    Original     		2SA1987 2SC5359 2-21F1A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1987 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1987 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5359 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.


    Original     		2SA1987 2SC5359 PDF

    transistor 2SC5359

    Abstract: 2SC5359 100-W 2-21F1A 2SA1987
    Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Tc = 25°C


    Original     		2SC5359 2SA1987 transistor 2SC5359 2SC5359 100-W 2-21F1A 2SA1987 PDF

    transistor 2Sc5359

    Abstract: 2SC5359 2SA1987 2SC5359 100-W 2-21F1A 2SA1987
    Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Maximum Ratings Tc = 25°C


    Original     		2SC5359 2SA1987 transistor 2Sc5359 2SC5359 2SA1987 2SC5359 100-W 2-21F1A 2SA1987 PDF

    transistor 2SC5359

    Abstract: 2SC5359
    Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Tc = 25°C


    Original     		2SC5359 2SA1987 2-21F1A transistor 2SC5359 2SC5359 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Ta = 25°C


    Original     		2SC5359 2SA1987 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Ta = 25°C


    Original     		2SC5359 2SA1987 PDF

    transistor 2SC5359

    Abstract: 2SC5359
    Text: 2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = 230 V • Complementary to 2SA1987 • Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings Ta = 25°C


    Original     		2SC5359 2SA1987 2-21F1A transistor 2SC5359 2SC5359 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    2SC4793 2sa1837

    Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
    Text: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y


    Original     		2SA2058 2SA1160 2SC2500 2SA1430 2SC3670 2SA1314 2SC2982 2SC5755 2SA2066 2SC5785 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor PDF

    transistor 2SC5359

    Abstract: tr 2sA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2-21F1A 2SA1987 2SA1987 2SC5359
    Text: TO SH IBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm 20.5M AX. • • • High Collector Voltage : VCEO- 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan     		2SC5359 2SA1987 transistor 2SC5359 tr 2sA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2-21F1A 2SA1987 2SA1987 2SC5359 PDF

    transistor 2SC5359

    Abstract: 2-21F1A 2SA1987 2SC5359 2SC53
    Text: TOSHIBA 2SC5359 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm POWER AMPLIFIER APPLICATIONS ¿3.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO —230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan     		2SC5359 2SA1987 transistor 2SC5359 2-21F1A 2SA1987 2SC5359 2SC53 PDF

    transistor 2SC5359

    Abstract: 2-21F1A 2SA1987 2SC5359 tr 2sA1987
    Text: TO SH IBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm 53.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO- 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan     		2SC5359 2SA1987 transistor 2SC5359 2-21F1A 2SA1987 2SC5359 tr 2sA1987 PDF

    transistor 2SC5359

    Abstract: 2-21F1A 2SA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR
    Text: 2SA1987 TO SH IBA 2 S A 1 987 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm High Collector Voltage : V 0 e q = - 23OV Min. Complementary to 2SC5359 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan     		2SA1987 2SC5359 transistor 2SC5359 2-21F1A 2SA1987 power amplifier 2sc5359 2sa1987 TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2 S C 5 3 59 U nit in mm 3.3 + 0.2 2Q.5MAX • • • High Collector Voltage : V q e O = 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan     		2SC5359 2SA1987 PDF

    2SA1987

    Abstract: transistor 2SC5359 2-21F1A 2SC5359
    Text: TO SHIBA 2SA1987 2 S A 1 987 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm ¿3.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO——230V (Min. Complementary to 2SC5359 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan     		2SA1987 VCEO----230V 2SC5359 2SA1987 transistor 2SC5359 2-21F1A PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1987 2 S A 1 987 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 3.3 + 0.2 2Q.5MAX • High Collector Voltage : V q e O “ —230V Min. • Complementary to 2SC5359 • Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan     		2SA1987 --230V 2SC5359 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1987 2 S A 1 987 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 2 0 .5 M A X . • • • ^ 3 .3 ± 0 .2 High Collector Voltage : V q e O = -2 3 0 V Min. Complementary to 2SC5359 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan     		2SA1987 2SC5359 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SC5359 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm POWER AMPLIFIER APPLICATIONS 2 0 .5 M A X . • • • ^ 3 .3 ± 0 .2 High Collector Voltage : V q e O = 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier


    OCR Scan     		2SC5359 2SA1987 ----L20 PDF