TRANSISTOR 2N5088 Search Results

hFE-200 to-92 npn

Abstract: 2N5087 2N5086 2n5088 transistor hFE-200 transistor PNP 2N5088 2N5089 hFE-200
Contextual Info: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.

2N5087

Abstract: transistor 2N5086 2N5086 2n5088 transistor 2N5088 equivalent 2N5088 2N5089 ST transistor Semtech Electronics
Contextual Info: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.

hFE-200 to-92 npn

Abstract: 2N5087 hFE-200 transistor PNP 2N5086 2n5088 transistor ST transistor 2N5088 2N5089 hFE-150
Contextual Info: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.

2N5087

Abstract: transistor 2N5086 2N5087 equivalent 2N5086 2n5088 transistor 2N5088 2N5089
Contextual Info: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.

2N5088 equivalent

Abstract: ST transistor 2n5088 transistor 2N5086 2N5087 2N5088 2N5089 hfe 300
Contextual Info: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.

2N5089 equivalent

Abstract: 2N5088 equivalent ST transistor 2N5087 2N5089 2n5088 transistor transistor 2N5088 2N5086 2N5088
Contextual Info: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.

2N5088 equivalent

Abstract: 2N5088 2n5088 transistor 2N5089 2N5087 ST transistor 2N5089 equivalent 2N5089 NPN 2N5089 power ST 024
Contextual Info: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.

2N5088

Abstract: 2N5089 2N5088 equivalent 2N5089 transistor 2n5088 transistor ST 024 2N5086 2N5087 st2n5088 2N5088 power
Contextual Info: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.

transistor 2n5088

Abstract: 2N5088 equivalent 2n5088 transistor ic str 6707 STR s 6707 2N5087 2N5088 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5088 NPN general purpose transistor Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification NPN general purpose transistor

100khz 5v transistor npn

Contextual Info: 2N5088 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V Ceo =30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

2N5088

Abstract: 2N5089 2N5088 equivalent 2n5088 transistor transistor 2N5088 2N5089 equivalent transistor amplifier 5v to 15v 5089 silicon npn transistor 2N4403 NPN Transistor transistor 2n5088 equivalent
Contextual Info: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089: 25V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: 2N 5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: = 2N5088: 3 0 V 2N5089: 25V • Collector Dissipation: Pc max =625mW V c eo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol Characteristic Collector-Base Voltage

TRANSISTORS BJT bc548

Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Contextual Info: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002

2n5088

Abstract: 2N5089 2n6088 transistor 2N5088 2n5088 transistor 2N608
Contextual Info: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Em itter Voltage: V ceo= 2N5088:30V 2N6088: 25V • Collector Dissipation: Pc max '=625mW ABSOLUTE MAXIMUM RATINGS <TA=25t:) C haracteristic Collector-Base Voltage Collector-Em itter Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N5088 TRANSISTOR NPN 1. EMITTER 2. BASE FEATURES z General Purpose Amplifier Transistor z High DC Current Gain 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2n5088 transistor

Abstract: 2N6088 2N5088 2N5089
Contextual Info: L I< N AMER PHILIPS/DISCRETE SSE D i •" Bi bbSBTBl GG17SGb 7 2N5088 2N5089 T -a^ -ai SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small-signal transistor in plastic TO-92 envelope intended for low-noise stages in audio equipment. Complementary types are 2N5086/2N5087.

2NS089

Abstract: 2n 5088 transistor 2N5088 STC 5089
Contextual Info: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: TO-92 = 2N5088: 30V 2NS089: 25V • Collector Dissipation: Pc max =625mW V c eo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Unit 30 30 25 4.5 50 62 5 150 -5 5 ^ 1 5 0

KSP8097

Abstract: 10KO 2N5088
Contextual Info: KSP8097 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO=40V • Collector Dissipation: Pc max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage

2N5087

Abstract: 2N5088 BP317 transistor 2N5087
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5087 PNP general purpose transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 02 Philips Semiconductors Product specification PNP general purpose transistor

Contextual Info: i i N ANER P H I L I P S / D I S C R E T E SSE D i {□ □53=131 DQ175DI3 7 I 2N5088 2N5089 T - ^ - 2 1 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small-signal transistor in plastic TO-92 envelope intended for low-noise stages in audio equipment. Complementary types are 2N5086/2N5087.

2N5088 equivalent

Abstract: 2n5088 transistor transistor 2N5210 2N5210 2N5088
Contextual Info: 2N5210 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 50V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: KSP8097 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO=25V • Collector Dissipation: PC max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: 2N5210 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V Ce o = 5 0 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage