2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
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3SK309
3SK317
3SK318
BB101C
BB102C
BB301C
BB302C
BB304C
BB305C
BB501C
2SC 8550
6020v4
6030v4
HITACHI 08122B
2SC 8050
HITACHI 08123B
transistor h945
H945
TRANSISTOR c 6030v4
2sk3545
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort Amplifier Transistor MPSL51 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −100 Vdc Collector −Base Voltage VCBO −100 Vdc Emitter −Base Voltage VEBO −4.0 Vdc Collector Current — Continuous
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MPSL51
O-226AA)
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ic MA 2831
Abstract: 3DD13001 transistor 131-6
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-92 FEATURES power switching applications 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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3DD13001
ic MA 2831
3DD13001
transistor 131-6
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR NPN TO-92 FEATURE • power switching applications 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. COLLECTOR Value
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3DD13001B
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR NPN TO-92 FEATURE • power switching applications 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 2. COLLECTOR Value
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3DD13001B
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-251-3L FEATURES power switching applications 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units
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O-251-3L
3DD13001
O-251-3L
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR NPN TO-92 FEATURE • power switching applications 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. COLLECTOR Value
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3DD13001B
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ic MA 2831
Abstract: 3DD13001B 3DD13001 131-6 to92
Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.harom.cn 3DD13001B TRANSISTOR NPN TO-92 FEATURE • power switching applications 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 2. COLLECTOR
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3DD13001B
ic MA 2831
3DD13001B
3DD13001
131-6 to92
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ic MA 2831
Abstract: 3DD13001 3dd13001 TRANSISTOR
Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.harom.cn 3DD13001 TRANSISTOR NPN TO-92 FEATURES power switching applications 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol
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3DD13001
ic MA 2831
3DD13001
3dd13001 TRANSISTOR
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mtp3n
Abstract: No abstract text available
Text: MTP3N100E Designer’s Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading
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MTP3N100E
MTP3N100E/D
mtp3n
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511 MOSFET TRANSISTOR motorola
Abstract: MTP3N100E transistor 131-6 AN569
Text: MOTOROLA Order this document by MTP3N100E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP3N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1000 VOLTS
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MTP3N100E/D
MTP3N100E
MTP3N100E/D*
511 MOSFET TRANSISTOR motorola
MTP3N100E
transistor 131-6
AN569
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PHB191NQ06LT
Abstract: PHP191NQ06LT
Text: PHP/PHB191NQ06LT N-channel TrenchMOS logic level FET Rev. 01 — 05 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features
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PHP/PHB191NQ06LT
O-220AB)
OT404
PHB191NQ06LT
PHP191NQ06LT
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13164
Abstract: PHB129NQ04LT PHP129NQ04LT
Text: PHP/PHB129NQ04LT N-channel TrenchMOS logic level FET Rev. 01 — 11 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features
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PHP/PHB129NQ04LT
O-220AB)
OT404
13164
PHB129NQ04LT
PHP129NQ04LT
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PHB176NQ04T
Abstract: PHP176NQ04T
Text: PHP/PHB176NQ04T N-channel TrenchMOS standard level FET Rev. 01 — 10 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Standard level threshold
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PHP/PHB176NQ04T
O-220AB)
OT404
PHB176NQ04T
PHP176NQ04T
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and hign
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PHD5N20E
OT428
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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BFT46
Abstract: No abstract text available
Text: • L.bSB'm DD253fll 31T H A P X N AUER PHILIPS/DISCRETE b7E » BFT46 y v N-CHANNEL SILICON FET Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film
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DD253fll
BFT46
0D253fib
00ES367
BFT46
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2SK425
Abstract: NEC 2SK425 S-10 X17 marking SX50V 4511B1 N-Channel Silicon Junction Field Effect Transistor
Text: Junction Field Effect Transistor 2SK425 <BJSìli Hi « ffl N-Channel Silicon Junction Field Effect Transistor A u d io F re q u e n cy A m p lifier fl'JK E l/ P A C K A G E DIMENSIONS ftë / F E A T U R E U nit ; mm U High gn, t " f -i 1 - ì 'V ? u > ^ frû ; <
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2SK425
2SK425
NEC 2SK425
S-10
X17 marking
SX50V
4511B1
N-Channel Silicon Junction Field Effect Transistor
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TDA2591
Abstract: TDA2593 TDA 1195 TDA3500 da2591 a2591
Text: TD A2591/TDA2593 National Semiconductor TV Circuits TDA2591/TDA2593 Line Oscillator Combination General Description Connection Diagram The TOA2591 and TOA2593 are integrated line oscillator circuits for color television receivers using thyristor or transistor line deflection output stages.
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A2591/TDA2593
TDA2591/TDA2593
OA2591
OA2593
VI-16
TDA2591/TDA2593
TDA2591
TDA2593
TDA 1195
TDA3500
da2591
a2591
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100V 2A MPT3
Abstract: emitter 2SB1316 2SB1567 2SB1580 T100 marking BN MFE 2500
Text: 2SB1580/ 2SB1316/ 2SB1567 Transistors Power Transistor -100V , -2A 2SB1580 / 2SB1316 / 2SB1567 •Features •External dimensions (Units : mm) 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode.
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2SB1580/2SB1316/2SB1567
-100V,
2SB1580
2SB1316
2SB1567
2SD2195/2SD1980/2SD2398.
2SB1580
2SB1316
100ma
100V 2A MPT3
emitter
2SB1567
T100
marking BN
MFE 2500
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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d2396
Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Text: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .
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2SK2503
RK7002
TC363TS
DTC314TS
TC114G
100mA
TA124G
DTC144G
d2396
TRANSISTOR PNP B1443
D2396 equivalent
B1569A
TRANSISTORS PNP 50 V 1 A B1443
B1186A
transistor c5147
b1344
transistor equivalent b1443
K2460
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