TRANSISTOR 1316 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and hign

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

BFT46

Contextual Info: • L.bSB'm DD253fll 31T H A P X N AUER PHILIPS/DISCRETE b7E » BFT46 y v N-CHANNEL SILICON FET Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

2SK425

Abstract: NEC 2SK425 S-10 X17 marking SX50V 4511B1 N-Channel Silicon Junction Field Effect Transistor
Contextual Info: Junction Field Effect Transistor 2SK425 <BJSìli Hi « ffl N-Channel Silicon Junction Field Effect Transistor A u d io F re q u e n cy A m p lifier fl'JK E l/ P A C K A G E DIMENSIONS ftë / F E A T U R E U nit ; mm U High gn, t " f -i 1 - ì 'V ? u > ^ frû ; <

Contextual Info: ON Semiconductort Amplifier Transistor MPSL51 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −100 Vdc Collector −Base Voltage VCBO −100 Vdc Emitter −Base Voltage VEBO −4.0 Vdc Collector Current — Continuous

ic MA 2831

Abstract: 3DD13001 transistor 131-6
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-92 FEATURES power switching applications 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR NPN TO-92 FEATURE • power switching applications 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. COLLECTOR Value

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR NPN TO-92 FEATURE • power switching applications 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 2. COLLECTOR Value

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-251-3L FEATURES power switching applications 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR NPN TO-92 FEATURE • power switching applications 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. COLLECTOR Value

ic MA 2831

Abstract: 3DD13001B 3DD13001 131-6 to92
Contextual Info: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.harom.cn 3DD13001B TRANSISTOR NPN TO-92 FEATURE • power switching applications 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 2. COLLECTOR

TDA2591

Abstract: TDA2593 TDA 1195 TDA3500 da2591 a2591
Contextual Info: TD A2591/TDA2593 National Semiconductor TV Circuits TDA2591/TDA2593 Line Oscillator Combination General Description Connection Diagram The TOA2591 and TOA2593 are integrated line oscillator circuits for color television receivers using thyristor or transistor line deflection output stages.

mtp3n

Contextual Info: MTP3N100E Designer’s Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading

100V 2A MPT3

Abstract: emitter 2SB1316 2SB1567 2SB1580 T100 marking BN MFE 2500
Contextual Info: 2SB1580/ 2SB1316/ 2SB1567 Transistors Power Transistor -100V , -2A 2SB1580 / 2SB1316 / 2SB1567 •Features •External dimensions (Units : mm) 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode.

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

511 MOSFET TRANSISTOR motorola

Abstract: MTP3N100E transistor 131-6 AN569
Contextual Info: MOTOROLA Order this document by MTP3N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP3N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1000 VOLTS

PHB191NQ06LT

Abstract: PHP191NQ06LT
Contextual Info: PHP/PHB191NQ06LT N-channel TrenchMOS logic level FET Rev. 01 — 05 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features

13164

Abstract: PHB129NQ04LT PHP129NQ04LT
Contextual Info: PHP/PHB129NQ04LT N-channel TrenchMOS logic level FET Rev. 01 — 11 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features

PHB176NQ04T

Abstract: PHP176NQ04T
Contextual Info: PHP/PHB176NQ04T N-channel TrenchMOS standard level FET Rev. 01 — 10 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Standard level threshold

d2396

Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Contextual Info: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .

Contextual Info: TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. BASE PCM: 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current 0.2 A ICM: Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range