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    EMITTER Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    MC1235F Rochester Electronics LLC MC1235 - Gate, ECL, CDFP14 Visit Rochester Electronics LLC Buy
    100324FM/B Rochester Electronics 100324 - TTL to ECL Translator, 6 Func, Inverted Output, ECL Visit Rochester Electronics Buy
    MC1218L Rochester Electronics LLC MC1218 - ECL to TTL Translator, ECL, CDIP14 Visit Rochester Electronics LLC Buy
    100183FC Rochester Electronics LLC Multiplier, 100K Series, 8-Bit, ECL, CQFP24, CERPAK-24 Visit Rochester Electronics LLC Buy
    MC1230F Rochester Electronics LLC XOR Gate, ECL, CDFP14 Visit Rochester Electronics LLC Buy
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    Simco-Ion CE-AUTO-EMITTER-POINT-CLEANER

    Add -E To Either Part Number Shown Above, Per Fan Of 5802I Or 5810I |Simco-Ion CE-AUTO-EMITTER-POINT-CLEANER
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    Newark CE-AUTO-EMITTER-POINT-CLEANER Bulk 1
    • 1 $104.41
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    Pilz International PSEN OP PIGTAIL EMITTER (ALTERNATE: 631055)

    Connection cable pigtail for sender light curtain Advanced PSEN opXX-A, 0.2 m. | Pilz PSEN OP PIGTAIL EMITTER
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    RS PSEN OP PIGTAIL EMITTER (ALTERNATE: 631055) Bulk 4 Weeks 1
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    Kingbright APHHS1005CGCK

    Standard LEDs - SMD GREEN WTR CLEAR 40mcd 574nm
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    TTI APHHS1005CGCK Reel 422,000 2,000
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    Kingbright APT1608SYCK

    Standard LEDs - SMD YELLOW WATER CLEAR
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    TTI APT1608SYCK Reel 162,000 2,000
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    Kingbright APT1608SURCK

    Standard LEDs - SMD RED WATER CLEAR
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    TTI APT1608SURCK Reel 162,000 2,000
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    EMITTER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor G11

    Abstract: to-126 HIGH SPEED SWITCHING transistor g11 transistor NPN Transistor 10A 400V NPN Transistor 1A 400V to - 92 to-126 npn switching transistor 400v d 772 transistor
    Text: TS13003 High Voltage NPN Transistor TO-92 TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC 1.5A VCE SAT Features 1V @ IC =0.5A, IB =0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type


    Original
    PDF TS13003 O-126 TS13003CT TS13003CK transistor G11 to-126 HIGH SPEED SWITCHING transistor g11 transistor NPN Transistor 10A 400V NPN Transistor 1A 400V to - 92 to-126 npn switching transistor 400v d 772 transistor

    LG tv tuner unit

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R J TV TUNER, VHF OSCILLATOR APPLICATIONS. *j U n it in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector C urrent Base C urrent Collector Power Dissipation


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    PDF 2SC3124 LG tv tuner unit

    TD62597A

    Abstract: No abstract text available
    Text: SILICON M O N O L IT H IC BIPO LAR D IG IT A L IN T EG R A T ED CIRCUIT - TD62593AFNJD62594AFN TD62597AFNJD62598AFN 8ch SINGLE DRIVER : C O M M O N EMITTER Th e TD 62 593, 4, 7, 8 A F N are co m prise d o f e ig h t N PN


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    PDF TD62593AFNJD62594AFN TD62597AFNJD62598AFN 50/is, TD62593AFN, TD62597AFN TD62594AFN 62598AFN TD62593AFN TD62597A

    Untitled

    Abstract: No abstract text available
    Text: TOS HIB A -CDISCRETE/OPTOi DE | T G ci7aS0 OODflOME ñ Sh ’ :t\ , 90972SO TOSHIBA {DISCRETE/OPTO 2N5039 56C 080^2 _ _ Io “ IC ~ V CE h a VBE COMMON EMITTER T c= 2 5’C 3 - 2 *> .#«• -n * * i —. 4 .« ,• 05 as 'j ai ao5


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    PDF 90972SO 2N5039

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 AUDIO POWER AMPLIFIER APPLICATIONS. • High DC Current Gain: MAXIMUM RATINGS Unit in mm hpE=100~320 (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage v CBO 30 V Collector-Emitter Voltage VCEO


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    PDF 2SC3666 100mA 800mA 800mA,

    75113

    Abstract: No abstract text available
    Text: SN55113, SN75113 DUAL DIFFERENTIAL LINE DRIVERS D 1 3 1 5 , SEPTEMBER 1 9 7 3 -R E V lS E D SEPTEMBER 1986 • • • Choice of Open-Collector, Open-Emitter, or 3-State Outputs S N 5 5 1 13 SN 75113 . . J P AC KA G E D, J , OR N PAC KA G E TO P VIE W High-lmpedance Output State for Party-Line


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    PDF SN55113, SN75113 75113

    ic 748

    Abstract: 2SC4688
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 Unit in ram Weight: ELECTRICAL CHARACTERISTICS CHARACTERISTIC Ta=25°C SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage


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    PDF 2SC4688 ic 748 2SC4688

    Untitled

    Abstract: No abstract text available
    Text: 2SC3547A silicqn npn epitaxial planar type transistor TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON COLLECTOR • Transition Frequency is High and Dependent on C urrent Excellently. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage


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    PDF 2SC3547A

    transistor BF 451

    Abstract: transistor BLC
    Text: SILICON NPN EPITAXIAL PLANAR T Y P E TRANSISTOR 2 3 Q 4 2 5 1 U nit in mm TV TUNER, VHF O SCILLATO R APPLICATIO NS. M AXIM UM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector C urrent Base C urrent


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    PDF SC-70 transistor BF 451 transistor BLC

    2N5157

    Abstract: No abstract text available
    Text: TYPE 2N5157 N-P-N SILICON POWER TRANSISTOR • 100 W at 75° C Case Temperature • 700 V Collector-Emitter Off-State Voltage • Min V BR CEO of 400 V • Max t0ff of 1.7 /is at lc = 1 A • Typ VcE(sat) of 0.3 V at lc = 3.5 A • Typ f r of 5 MHz at 12 V , 0.2 A


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    PDF 2N5157

    GT60M303

    Abstract: No abstract text available
    Text: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP.


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    PDF GT60M303 25//s GT60M303

    td62505

    Abstract: No abstract text available
    Text: TD62501 P/F#TD62502P/F TD62503P/FfTD62504P/F - TD62505P/FJD62506P/F TD62507P/F s ilic o n m o n o l i t h i c BIPO LAR DIGITAL INTEGRATED CIRCUIT 7 SINGLE DRIVER TD62501, 502, 503, 504P/F : C O M M O N EMITTER TD62505, 506P/F


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    PDF TD62501 TD62502P/F TD62503P/FfTD62504P/F TD62505P/FJD62506P/F TD62507P/F TD62501, 504P/F TD62505, 506P/F TD62507P td62505

    75113

    Abstract: No abstract text available
    Text: • T -7S-4S-07 SN55113, SN75113 DUAL DIFFERENTIAL LINE DRIVERS 6=^1724 □0A223ci 7 « T i m TEXAS INSTR L IN /I N T F C * D 1 3 1 5 , SEPTEMBER 1 9 7 3 -R E V IS E O SEPTEM8ER 1 9 8 6 Choice of Open-Collector, Open-Emitter, or 3-State Outputs SN55113 . . . J PACKAGE


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    PDF 0A223ci -7S-4S-07 SN55113, SN75113 SN55113 SN7B113 SN75114 SN75115 12res SN55113 75113

    S1377

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE S1377 Unit in ram MEDIUM POWER AMPLIFIER APPLICATIONS. 9.9MAX. 0Z.2±aZ TV HORIZONTAL DRIVER APPLICATIONS. FEATURES: . High Collector to Emitter Breakdown Voltage -• Vcfi0=250V MAXIMUM RATINGS Ta =25°C CHARACTERISTIC SYMBOL


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    PDF S1377 100mA 200mA, S1377

    Untitled

    Abstract: No abstract text available
    Text: GaAs IRED a PHOTO-TRANSISTOR TLP628,-2,-4 TLP628 Unit in mm PROGRAMMABLE CONTROLLERS. DC-OUTPUT MODULE. TELECOMMUNICATION. 4 The TOSHIBA TLP628, -2, and -4 consists of a gallium arsenide infreared emitting diode optically coupled to a phototransistor which has a 350V high voltage of collector-emitter breakdown


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    PDF TLP628 TLP628) TLP628, TLP628-4 5000Vrms UL1577, E67349 TLP628-4

    2sa965

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA965 U nit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SC2235. = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


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    PDF 2SA965 2SC2235. --10mA, --500mA, -500m 100mA 2sa965

    YTS2222A

    Abstract: transistor marking 1p Z
    Text: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage


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    PDF 500mA YTS2222A 300MHz YTS2907A. 500mA, Ta-25 150mA, YTS2222A transistor marking 1p Z

    2SC2348

    Abstract: No abstract text available
    Text: SILICON NPN PLANAR TYPE TRANSISTOR TV VHF RF AM PLIFIER APPLIC A TIO N S. M A X IM U M U n i t in m m RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation


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    PDF SC-43 220//F 2SC2348 2SC2348

    PHOTO SENSORS

    Abstract: fiber optical photo detector LED Reflective Optical Sensor Infrared photosensor OPTICAL INTERRUPTER position infrared detector object detection
    Text: S. Classification of Photo Sensors The Toshiba Photo Sensor is classified as follows: Infrared LED [Emitters Visible LED Photo Transistor Photo sensors• Photo Diode IDetectors Photo 1C : Photo Interrupter ; Compound ; sensors : Photo Reflective Sensor 3. Photosensor Applications


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    TD62504F

    Abstract: TD62506F td62503 td62504 td62505 td62506 TD62 TD62507F td62501 TRANSISTOR bj ez
    Text: TD62501F— TD62507F BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC SINGLE DRIVE TD62501F TD62502F TD62503F TD62504F TD62505F TD62506F TD62507F PACKAGE COMMON EMITTER COMMON EMITTER COMMON EMITTER COMMON EMITTER COMMON COLLECTOR COMMON COLLECTOR ISOLATED


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    PDF TD62501F-- TD62507F TD62501F TD62502F TD62503F TD62504F TD62505F TD62506F TD62507F 200mA td62503 td62504 td62505 td62506 TD62 td62501 TRANSISTOR bj ez

    Untitled

    Abstract: No abstract text available
    Text: G T 8 Q 1 2 S M -2 ^ 2 2 ^ HIGH POW ER SW ITCHING APPLICATION S. M O TOR CO N TR O L APPLICATIO N S. M AXIM UM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTICS Collector-Emitter Voltage


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    PDF GT8Q102

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1899 POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. • Complementary to 2SC5052. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT VCBO -1 2 0 V Collector-Emitter Voltage VCEO


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    PDF 2SA1899 2SC5052. ----120V, --10mA, --100mA --500mA, --50mA

    2SB1016

    Abstract: 1C13MAX
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1016 POWER AMPLIFIER APPLICATIONS. Unit in mm 1C13MAX. 0z.2±az FEATURES: . High Breakdown Voltage : V -.gQ=-100V :i2 . Low Collector-Emitter Saturation Voltage : ^CE(sat =-2 .OV(Max.) . Complementary to 2SD1407 . Recommended for 30W High-Fidelity Audio Frequency


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    PDF 2SB1016 1C13MAX. -100V 2SD1407 Q76-CU5 -50mA, 2SB1016 1C13MAX

    GT8G101

    Abstract: 072G
    Text: SILICON N CH ANN EL M O S T Y P E GT8G101 Unit in ram ST R O B E FLASH A P P L IC A T IO N S • • • Enhancement-Mode Low Saturation Voltage : V cE sat = 8V (Max.) (@Ic = 130A) 4.3V Gate Drive Collector Gate |fJ 3.0 m. Emitter > 0.75 M A X I M U M R A T IN G S (Ta = 25°C)


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    PDF GT8G101 100ns GT8G101 072G