2SC3666 Search Results

2SC3666 Datasheets (14)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC3666	Toshiba	2SC3666 - TRANSISTOR 1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7D101A, 3 PIN, BIP General Purpose Small Signal	Original	PDF
2SC3666	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC3666	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC3666	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SC3666	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC3666	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SC3666	Toshiba	Silicon NPN transistor for audio power amplidier applications	Scan	PDF
2SC3666	Toshiba	TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)	Scan	PDF
2SC3666-O	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC3666O	Toshiba	Silicon NPN Epitaxial Type Transistor	Scan	PDF
2SC3666-O	Toshiba	Audio Power Amplifier Apps	Scan	PDF
2SC3666-Y	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC3666Y	Toshiba	Silicon NPN Epitaxial Type Transistor	Scan	PDF
2SC3666-Y	Toshiba	Audio Power Amplifier Apps	Scan	PDF

2SC3666 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 AUDIO POWER AMPLIFIER APPLICATIONS. • High DC Current Gain: MAXIMUM RATINGS Unit in mm hpE=100~320 (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage v CBO 30 V Collector-Emitter Voltage VCEO	OCR Scan	2SC3666 100mA 800mA 800mA,	PDF
2-7D101A Abstract: 2SA1426 2SC3666 A1426 v30010 Contextual Info: 2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1426 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	2SA1426 2SC3666. 2-7D101A 2SA1426 2SC3666 A1426 v30010	PDF
c3666 Abstract: 2SC3666 2-7D101A Contextual Info: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	2SC3666 c3666 2SC3666 2-7D101A	PDF
Contextual Info: 2SA1426 TOSHIBA 2SA1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • High hpE : hjrE = 100~320 IW Output Applications. Complementary to 2SC3666. 7 .1 MAX MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SA1426 2SC3666.	PDF
c3666 Abstract: 2-7D101A 2SC3666 Contextual Info: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol	Original	2SC3666 c3666 2-7D101A 2SC3666	PDF
2-7D101A Abstract: 2SC3666 Contextual Info: TO SH IBA 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hpE (l) = 100~320 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage	OCR Scan	2SC3666 2-7D101A 2SC3666	PDF
C3666 Abstract: 2-7D101A 2SC3666 Contextual Info: 2SC3666 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC3666 ○ 低周波電力増幅用単位: mm • 直流電流増幅率が高い。 • 許容コレクタ損失が大きい。 : PC = 1000 mW : hFE(1) = 100~320 絶対最大定格 (Ta = 25°C)	Original	2SC3666 2-7D101A C3666 2-7D101A 2SC3666	PDF
2-7D101A Abstract: 2SC3666 Contextual Info: TO SH IBA 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hpE (l) = 100~320 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage	OCR Scan	2SC3666 2-7D101A 2SC3666	PDF
Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1426 AUDIO POWER AMPLIFIER APPLICATIONS. • • • U n it in nun High h fj; : hpE = 100—320 1W Output Applications. Complementary to 2SC3666. MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SA1426 2SC3666. --10mA	PDF
2-7D101A Abstract: 2SA1426 2SC3666 Contextual Info: TOSHIBA 2SA1426 2 S A1 426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • High hpE : h]?E —100~320 IW Output Applications. Complementary to 2SC3666. 7.1 MAX 2.7MAX M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SA1426 2SC3666. 2-7D101A 2SA1426 2SC3666	PDF
C3666 Abstract: 2-7D101A 2SC3666 Contextual Info: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	2SC3666 C3666 2-7D101A 2SC3666	PDF
Contextual Info: T O SH IB A 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hpE (l) = 100~320 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage	OCR Scan	2SC3666	PDF
2sc3667 Abstract: 2SD1590 2SD1961 2SC269 2S01207 2SC4351 2SD1319 2SD1565 2SC2274 2SC2690A Contextual Info: 254 - m % M % tt T y p e No. Mantif. SANYO 2SD 1918 □— A 2SC4027 2SD 1919 □— A 2SD1246 2SD 1920 1921 NEC 2SC2690A 2SC3666 2SD1330 2SC3243 2SC3665 2SD639 2SC3581 B 2SD 1925 B tL 2SD 1926 B 2 2SD 1927 B 2SD 1928 B 2SD 1929 * □— A 2SC4169 2SU1Y00	OCR Scan	2SD1918 2SD1919 2SD1920 2SC4027 2SD1246 2SD545 2SC2274 2SC3667 2SC3666 2SC3665 2SD1590 2SD1961 2SC269 2S01207 2SC4351 2SD1319 2SD1565 2SC2274 2SC2690A	PDF
2sD1555 Abstract: 2SD4391 2SM583 2SD1483 2SD1554 2SD1994A D1866 2SD1164 2SD1347 2SD2404 Contextual Info: - 252 - m tt £ T y p e No. € M a nuf. Z * SANYO He ^ TOSHIBA 2SD 1850 tfi T 2SD 1851 H. j=É 2SD 1852 = & 2SD 1 853 ^ H # 2S D 1854 H £ 2S D 1855 O — A 2SC3746 oori • ]occ <¡0 □— A □— A □— A 2SDÌ826 2SD400 2SC3666 2 S D 1857 i m NEC B	OCR Scan	2SD1850 2SD1851 2SD1852 2SD1886 2SC2532 2SD1478 2SD892 2SD1698 2SD1697 2SD893 2sD1555 2SD4391 2SM583 2SD1483 2SD1554 2SD1994A D1866 2SD1164 2SD1347 2SD2404	PDF

Contextual Info: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	2SC3666 2-7D101A	PDF
2-7D101A Abstract: 2SA1426 2SC3666 A1426 Contextual Info: 2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1426 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	2SA1426 2SC3666. 2-7D101A 2SA1426 2SC3666 A1426	PDF
Contextual Info: TOSHIBA 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 AUDIO POWER AMPLIFIER APPLICATIONS U nit in mm ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL TEST CONDITION CHARACTERISTIC Collector Cut-off Current VCB = 30V, Ie = 0 ICBO	OCR Scan	2SC3666 100mA 800mA 800mA, 100mA	PDF
Contextual Info: 2SA1426 T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 426 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • High hp g : hpE = 100—320 1W Output Applications. Complementary to 2SC3666. 7,1 m a x S. 7 MAS MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SA1426 2SC3666.	PDF
2-7D101A Abstract: 2SC3666 Contextual Info: TOSHIBA 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High DC Current Gain : (1) = 100~320 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage	OCR Scan	2SC3666 2-7D101A 2SC3666	PDF
Contextual Info: 2SA1426 TO SH IBA 2SA 1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • • High hpE • hpE - 100~320 1 W Output Applications. Complementary to 2SC3666. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2SA1426 2SC3666.	PDF
Contextual Info: 2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1426 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	2SA1426 2SC3666. 2-7D101A	PDF
C3666 Abstract: 2-7D101A 2SC3666 Contextual Info: 2SC3666 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC3666 ○ 低周波電力増幅用単位: mm • 直流電流増幅率が高い。 • 許容コレクタ損失が大きい。 : PC = 1000 mW : hFE = 100~320 絶対最大定格 (Ta = 25°C)	Original	2SC3666 2-7D101A 20070701-JA C3666 2-7D101A 2SC3666	PDF
a1426 Abstract: V30010 2-7D101A 2SA1426 2SC3666 Contextual Info: 2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1426 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol	Original	2SA1426 2SC3666. a1426 V30010 2-7D101A 2SA1426 2SC3666	PDF
2-7D101A Abstract: 2SA1426 2SC3666 Contextual Info: 2SA1426 TO SH IBA 2SA 1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • • High hpE • hpE - 100~320 1 W Output Applications. Complementary to 2SC3666. MAXIMUM RATINGS (Ta = 25°C) SYMBOL	OCR Scan	2SA1426 SA142 2SC3666. 2-7D101A 2-7D101A 2SA1426 2SC3666	PDF

2SC3666 Search Results

2SC3666 Datasheets (14)

2SC3666 Datasheets Context Search

2-7D101A

c3666

c3666

2-7D101A

C3666

2-7D101A

2-7D101A

C3666

2sc3667

2sD1555

2-7D101A

2-7D101A

C3666

a1426

2-7D101A