Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-251-3L FEATURES power switching applications 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units
|
Original
|
PDF
|
O-251-3L
3DD13001
O-251-3L
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13001 TRANSISTOR NPN 1. BASE 2. COLLECTOR FEATURES z Power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
|
Original
|
PDF
|
3DD13001
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-92 FEATURES z Power switching applications 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. EMITTER Symbol Parameter
|
Original
|
PDF
|
3DD13001
|
3DD13001
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-251 FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃) 1. BASE Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range
|
Original
|
PDF
|
O-251
3DD13001
O-251
3DD13001
|
Untitled
Abstract: No abstract text available
Text: TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. BASE PCM: 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current 0.2 A ICM: Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range
|
Original
|
PDF
|
3DD13001
|
IB-20mA
Abstract: hfe1 3DD13001 3DD13001A1
Text: 华晶分立器件 3DD13001 A1 低频放大环境额定双极型晶体管 1 概述与特点 1.5 3DD13001 A1 硅 NPN 型功率开关晶体管 主要用于电子节能灯 电子镇流器及手机充电器的 功率开关电路 其特点如下 击穿电压高 反向漏电流小
|
Original
|
PDF
|
3DD13001
45max
100mA
100mA,
IB-20mA
hfe1
3DD13001A1
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR NPN TO-92 FEATURE • power switching applications 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. COLLECTOR Value
|
Original
|
PDF
|
3DD13001B
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR NPN TO-92 FEATURE • power switching applications 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 2. COLLECTOR Value
|
Original
|
PDF
|
3DD13001B
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13001 TRANSISTOR NPN 1. BASE 2. COLLECTOR FEATURES z Power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
|
Original
|
PDF
|
3DD13001
|
131-6 to92
Abstract: 3DD13001 npn 600v to92 ic MA 2831
Text: 3DD13001 NPN TO-92 Bipolar Transistors TO-92 1. BASE 4.45 5.21 2. COLLECTOR 1.25MAX 3. EMITTER 2.92 MIN power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO Parameter Value Units 600 V Collector -Base Voltage VCEO Collector-Emitter Voltage
|
Original
|
PDF
|
3DD13001
25MAX
131-6 to92
npn 600v to92
ic MA 2831
|
ic MA 2831
Abstract: 3DD13001 transistor 131-6
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-92 FEATURES power switching applications 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
|
Original
|
PDF
|
3DD13001
ic MA 2831
3DD13001
transistor 131-6
|
3DD13001
Abstract: datasheet of ic 555 A1070
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR（ NPN ） TO—92 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 0.2 A Collector-base voltage V BR CBO : 600 V Operating and storage junction temperature range
|
Original
|
PDF
|
3DD13001
O--92
270TYP
050TYP
3DD13001
datasheet of ic 555
A1070
|
3DD13001
Abstract: No abstract text available
Text: 3DD13001 0.2A , 600V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 Power switching applications A D B CLASSIFICATION OF hFE 1 Product-Rank 3DD13001-A
|
Original
|
PDF
|
3DD13001
3DD13001-A
3DD13001-B
19-Aug-2011
3DD13001
|
ic MA 2831
Abstract: 3DD13001B 3DD13001 131-6 to92
Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.harom.cn 3DD13001B TRANSISTOR NPN TO-92 FEATURE • power switching applications 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 2. COLLECTOR
|
Original
|
PDF
|
3DD13001B
ic MA 2831
3DD13001B
3DD13001
131-6 to92
|
|
|
3dd13001 TRANSISTOR
Abstract: 3DD13001
Text: 3DD13001 3DD13001 TRANSISTOR NPN FEATURES Power dissipation PCM: TO-251 1.2 W (Tamb=25℃) 1. BASE Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range 2. COLLECTOR 3EMITTER TJ, Tstg: -55℃ to +150℃
|
Original
|
PDF
|
3DD13001
O-251
3dd13001 TRANSISTOR
3DD13001
|
300TYP
Abstract: 3DD13001 IC 7900
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR（ NPN ） TO—251 FEATURES Power dissipation PCM : 1.2 W（Tamb=25℃） Collector current ICM : 0.2 A Collector-base voltage V BR CBO : 600 V Operating and storage junction temperature range
|
Original
|
PDF
|
O-251
3DD13001
O--251
091TYP
300TYP
300TYP
3DD13001
IC 7900
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR（ NPN ） TO—126 FEATURES 1. EMITTER Power dissipation PCM : 1 W（Tamb=25℃） Collector current ICM : 0.2 A Collector-base voltage V BR CBO : 600
|
Original
|
PDF
|
O-126
3DD13001
EB5-30
290TYP
090TYP
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. BASE PCM: 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current 0.2 A ICM: Collector-base voltage 600 V V(BR)CBO:
|
Original
|
PDF
|
3DD13001
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR NPN TO-92 FEATURE • power switching applications 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. COLLECTOR Value
|
Original
|
PDF
|
3DD13001B
|
3DD13001
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13001 TRANSISTOR NPN TO-251 FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃) 1. BASE Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range
|
Original
|
PDF
|
O-251
3DD13001
O-251
3DD13001
|
transistor 131-6
Abstract: 131-6 transistor 3dd13001 TRANSISTOR 3DD13001 npn 600v to92
Text: 3DD13001 3DD13001 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. BASE PCM: 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.2 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range 3. EMITTER 1 2 3 TJ, Tstg: -55℃ to +150℃
|
Original
|
PDF
|
3DD13001
transistor 131-6
131-6 transistor
3dd13001 TRANSISTOR
3DD13001
npn 600v to92
|
secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
|
Original
|
PDF
|
SGSR809-A
SC-59
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
c945 p 331 transistor npn
SM2150AM
SM1150AM
c945 p 331 transistor
SMBJ11CA
2sd2142
SM4005A
SSG8
pzt649
|
3DD13001
Abstract: No abstract text available
Text: 3DD13001 TRAN SISTO R N PN FEATURES □ m□ P o w e r d is s ip a t io n T O -9 2 P cm: 0.75W (Tamb=25°C) C o lle c to r cu rre n t 1.E M I T T E R Ic 2.C O L L E C T O R m ; 0.2 A C o lle c to r-b a se v o lta g e 3.B A S E V ( b r )c b o : 600 V O p e ra tin g and s t o ra g e ju n c tio n tem perature ra n ge
|
OCR Scan
|
PDF
|
3DD13001
100mA
|
3DD13001
Abstract: No abstract text available
Text: m c c TO -126 P la s tic -E n c a p s u la te T ra n s is to rs ^ 3DD13001 T R A N S IS T O R N P N FEATU R E S I p p é r ^ e tM jà r tlo n Pcm ; . 1W (Tamb=25"C) •eanireiii^ -base voltage V(BR)côo: 600 V &tyfÿniQtig.-sfttf s to ra g e ju n c tio n te m p e ra tu re ra n g e
|
OCR Scan
|
PDF
|
3DD13001
|