2N6309
Abstract: pn junction DIODE 1N4001 Graph of Length vs Thermal resistance of Heat sink Mullard technical communications 2N3053 characteristic curves 2N5983 equivalent AN569 pin details of 2N5190 2N5304 2N5974
Text: AN569/D Transient Thermal Resistance General Data and Its Use Prepared by: Bill Roehr and Bryce Shiner ON Semiconductor Applications Engineering http://onsemi.com APPLICATION NOTE Introduction For a certain amount of dc power dissipated in a semiconductor, the junction temperature reaches a value
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AN569/D
r14525
2N6309
pn junction DIODE 1N4001
Graph of Length vs Thermal resistance of Heat sink
Mullard technical communications
2N3053 characteristic curves
2N5983 equivalent
AN569
pin details of 2N5190
2N5304
2N5974
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JESD24-3
Abstract: 3760-3 J1F3 J4F3
Text: AND8215/D Semiconductor Package Thermal Characterization Prepared by: Roger Paul Stout, PE ON Semiconductor http://onsemi.com APPLICATION NOTE Glossary of Symbols utilize some temperature “sensing” method internal to the device. For instance, in power MOSFET’s we ordinarily use
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AND8215/D
JESD24-3
3760-3
J1F3
J4F3
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Untitled
Abstract: No abstract text available
Text: User's Guide SLVU404 – September 2010 TLV7101828EVM-595 This user’s guide describes the characteristics, operation, and use of the TLV7101828EVM-595 Evaluation Module EVM as a reference design for engineering demonstration and evaluation of the TLV710xxxx dual-channel, low-dropout (LDO) linear regulator. Included in this user’s guide are setup
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SLVU404
TLV7101828EVM-595
TLV710xxxx
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dpack
Abstract: do214ab SMDA05 SMDA12 USB0805C
Text: Summer 1999 lightning @ 8/20µs and the SMDA series is rated for 5A, 8/20µs. An exception to the power rating is the MP6LC6.5, rated for 600W @ 10/1000µs, which is designed for use in more severe telecom environments. APPLICATIONS In addition to general use in meeting the
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USB0805C
dpack
do214ab
SMDA05
SMDA12
USB0805C
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AEC-Q101-001
Abstract: MSP3V3 diode marking 89a IEC-61000-4-2 JESD22-B102 J-STD-002
Text: New Product MSP3V3 Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors eSMP TM Series Top View Bottom View MicroSMP PRIMARY CHARACTERISTICS VWM 3.3 V PPPM 100 W IFSM 25 A TJ max. 150 °C TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage
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18-Jul-08
AEC-Q101-001
MSP3V3
diode marking 89a
IEC-61000-4-2
JESD22-B102
J-STD-002
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i 7814 hs
Abstract: International Power Devices M 8906 IMS 3630
Text: HES Series Power Converters INTERNATIONAL POWER DEVICES, INC. 20 LINDEN STREET BOSTON, MASSACHUSETTS 02134 From within the USA please call: 1-888-473-2668 From outside the USA please call: 617-782-3331 To send IPD a fax please use: 617-782-7416 To connect to the IPD web site:
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pn junction diode structure
Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss
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AN1028
Abstract: AN-1028 DV240 fluke 52
Text: National Semiconductor Application Note 1028 June 2001 INTRODUCTION As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus the purpose of this paper is to aid the user in
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OT-223
AN-1028
AN1028
AN-1028
DV240
fluke 52
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Minco CT16
Abstract: CT16A Minco Products AC1009 ssr diagram Ideal make ssr MOSFET based SSR CT16 1n5406 diode
Text: MINCO AC1009 20 AMP DC SOLID STATE RELAY INSTRUCTIONS Installation Instructions When using a Solid State Relay (SSR), it is essential that you remove heat from it. Whether mounting a SSR to a heatsink or to the side of a control cabinet, a thermal transfer medium should be used between
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AC1009
\MOD\AC1009\PRD\826MN
Minco CT16
CT16A
Minco Products
AC1009
ssr diagram
Ideal make ssr
MOSFET based SSR
CT16
1n5406 diode
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Untitled
Abstract: No abstract text available
Text: User's Guide SLVU416 – December 2010 TPS70728EVM-612 This user’s guide describes operational use of the TLV70728EVM-612 evaluation module EVM as a reference design for engineering demonstration and evaluation of the TLV70728, low dropout (LDO) linear
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SLVU416
TPS70728EVM-612
TLV70728EVM-612
TLV70728,
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IC HS 8108
Abstract: IC HS 8108 power supply 9416 Diode capacitor symbols zener diode 6c 5T 721A INTERSIL AN9416 lf 721a 911w HIP0080
Text: No. AN9416.1 Intersil Intelligent Power May 1995 Thermal Considerations In Power BiMOS Low Side Drivers HIP0080, HIP0081, HIP0082, CA3282 and Others Author: Wayne Austin Overview the user with a practical working knowledge of the thermal issues common to a Power Switch IC, both from a theoretical
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AN9416
HIP0080,
HIP0081,
HIP0082,
CA3282
HIP0082
CA3282
-40oC
IC HS 8108
IC HS 8108 power supply
9416 Diode
capacitor symbols
zener diode 6c 5T
721A INTERSIL
lf 721a
911w
HIP0080
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TPS7A3001DGN
Abstract: TPS7A4901DGN TPS7A3001 LDO PCB Layout Guidelines TPS7A4901 TPS7A30-49EVM-567 HPA567A SLVU405
Text: User's Guide SLVU405 – August 2010 TPS7A30-49EVM-567 This user’s guide describes the characteristics, operation, and use of theTPS7A30-49EVM-567 Evaluation Module EVM as a reference design to facilitate engineering evaluation of the TPS7A3001 negative
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SLVU405
TPS7A30-49EVM-567
theTPS7A30-49EVM-567
TPS7A3001
TPS7A4901
TPS7A3001DGN
TPS7A4901DGN
LDO PCB Layout Guidelines
TPS7A30-49EVM-567
HPA567A
SLVU405
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Untitled
Abstract: No abstract text available
Text: TEA1705 GreenChip SMPS transient controller Rev. 2 — 12 December 2013 Product data sheet 1. General description The TEA1705 is a secondary side IC to be used in Switched Mode Power Supplies SMPS with high power density. The device offers excellent transient response in primary
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TEA1705
TEA1705
TEA1720xT.
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TEA1705
Abstract: No abstract text available
Text: TEA1705 GreenChip SMPS transient controller Rev. 1 — 3 December 2013 Preliminary data sheet 1. General description The TEA1705 is a secondary side IC to be used in Switched Mode Power Supplies SMPS with high power density. The device offers excellent transient response in primary
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TEA1705
TEA1705
TEA1720xT.
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AT9173
Abstract: at9173eg SOP OF electrolyte TEST AT9173A AT9173AG marking code C06 1000uf capacitor capacitor 1000uf electrolyte 2N7002 marking c06
Text: AME AT9173 Bus Termination Regulator n General Description n Features ● Support The AT9173 is a voltage regulator which could convert the input voltage ranging from 1.8V to 5V to an output voltage that user settled. The regulator can provide sourcing or sinking current.The AT9173, used
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AT9173
AT9173
AT9173,
25VTT)
ATT-DS9173-C
at9173eg
SOP OF electrolyte TEST
AT9173A
AT9173AG
marking code C06
1000uf capacitor
capacitor 1000uf electrolyte
2N7002
marking c06
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Untitled
Abstract: No abstract text available
Text: FDC640P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage
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FDC640P
FDC640P
NF073
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FLMP SuperSOT-6
Abstract: FDC697P FDC697P_F077 Supersot6
Text: FDC697P P-Channel 1.8V PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. • –8 A, –20 V
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FDC697P
FDC697P
FLMP SuperSOT-6
FDC697P_F077
Supersot6
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Untitled
Abstract: No abstract text available
Text: FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage
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FDC602P
FDC602P
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Untitled
Abstract: No abstract text available
Text: FDG327NZ 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use
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FDG327NZ
FDG327NZ
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FDG327NZ
Abstract: SC70-6
Text: FDG327NZ 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use
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FDG327NZ
FDG327NZ
SC70-6
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Untitled
Abstract: No abstract text available
Text: User's Guide SLVU449B – March 2011 – Revised May 2011 TLV1117LVxxEVM-714 Evaluation Module This User’s Guide describes operational use of the TLV1117LVxxEVM-714 Evaluation Module EVM as a reference design for engineering demonstration and evaluation of the TLV1117LVxx, low dropout linear
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SLVU449B
TLV1117LVxxEVM-714
TLV1117LVxx,
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Mullard technical communications
Abstract: 2N6875 thermal resistance of low power semiconductor 2N5974 2N6309 AN415A 2N5983 motorola application note AN-569 2N3444 2N3252
Text: AN-569 Application Note TRANSIENT THERMAL RESISTANCE GENERAL DATA AND ITS USE Prepared by Bill Roehr and Bryce Shiner Applications Engineering Data illustrating the thermal response of a number of semiconductor die and package combinations are given. Its use,
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AN-569
2091i
1PHX7559^
Mullard technical communications
2N6875
thermal resistance of low power semiconductor
2N5974
2N6309
AN415A
2N5983
motorola application note AN-569
2N3444
2N3252
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Spice Model for TMOS Power MOSFETs
Abstract: spice model dc motor AR301 AN569 in Motorola Power Applications Power MOSFET Cross Reference Guide an913 Motorola EB142 AN913 TMOS POWER MOSFETs mosfet SOA testing EB142 motorola
Text: Motorola TMOS Power MOSFET and IGBT Application Literature Application Notes AN569 AN843 AN876 AN913 AN929 AN976 A N 1000 AN 1001 A N 1040 AN1043 AN1046 AN1078 AN1083 AN1090 AN1101 AN1102 AN1108 AN1300 AN1301 Transient Thermal Resistance — General Data and Its Use
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AN569
AN843
AN876
AN913
AN929
AN976
OT-223
EB123
EB142
OT223PAK/D
Spice Model for TMOS Power MOSFETs
spice model dc motor
AR301
AN569 in Motorola Power Applications
Power MOSFET Cross Reference Guide
an913 Motorola
AN913 TMOS POWER MOSFETs
mosfet SOA testing
EB142 motorola
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LM323A
Abstract: K02A LM109 LM123 LM123K LM150 LM323 LM323AK LM323K 12 VOLT 2 AMP regulator
Text: LM123/LM323A/LM323 3-Amp, 5-Volt Positive Regulator General Description The LM123 is a three-terminal positive regulator with a pre set 5V output and a load driving capability of 3 amps. New circuit design and processing techniques are used to pro vide the high output current without sacrificing the regulation
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LM123/LM323A/LM323
LM123
LM323A
LM323.
LM109
V-10V
TL/H/7771-6
-10VT0
LM101A
5011S4
K02A
LM123K
LM150
LM323
LM323AK
LM323K
12 VOLT 2 AMP regulator
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