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    TRANS SWITCHING Search Results

    TRANS SWITCHING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
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    TRANS SWITCHING Price and Stock

    Oslo Switch Inc 12-1W3-AMBER-TRANS

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    Onlinecomponents.com 12-1W3-AMBER-TRANS 36
    • 1 -
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    • 100 $1.62
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    Oslo Switch Inc 12-1W1-RED-TRANS

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    Onlinecomponents.com 12-1W1-RED-TRANS
    • 1 -
    • 10 $2.31
    • 100 $1.54
    • 1000 $0.76
    • 10000 $0.76
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    Oslo Switch Inc 12-1W2-CLEAR-TRANS

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    Onlinecomponents.com 12-1W2-CLEAR-TRANS
    • 1 -
    • 10 $2.31
    • 100 $1.54
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    Oslo Switch Inc 12-1W4-GREEN-TRANS

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    Onlinecomponents.com 12-1W4-GREEN-TRANS
    • 1 -
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    • 100 $1.54
    • 1000 $0.76
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    Oslo Switch Inc 12-1W5-BLUE-TRANS

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 12-1W5-BLUE-TRANS
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    TRANS SWITCHING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJ1005

    Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007
    Text: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:


    Original     		PDF IXTM3N100A O-204AA/TO-3 IXTM3N70A IXTM3N70 O-204AA/TO-3: MJ13081 MJ13091 MJ1005 MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007

    ssp11n60s5

    Abstract: SSP11n60 STW5N150 SVT6251 STI3005 ST4N150 STI-3007 A STP8N90 SVT6060 SVT300-5
    Text: STI Type: SSP11N60S5 Notes: Breakdown Voltage: Continuous Current: RDS on Ohm: Trans Conductance Mhos: Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: Polarity:


    Original     		PDF SSP11N60S5 SSP2N90A O-220AB/TO-220 SSP2N80A O-204AA/TO-3: TIP536 TIP538 ssp11n60s5 SSP11n60 STW5N150 SVT6251 STI3005 ST4N150 STI-3007 A STP8N90 SVT6060 SVT300-5

    2SK4111

    Abstract: 2SK4110 2SK4106 2sk4112 2sk2671 2sk4113 2SK2648 2N5121 2N5160 equivalent 2SK2666
    Text: STI Type: 2SK258 Notes: Breakdown Voltage: 250 Continuous Current: 8 RDS on Ohm: 1.12 Trans Conductance Mhos: 0.9 Trans Conductance A: 3.0 Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:


    Original     		PDF 2SK258 O-204AA/TO-3 2SK259 2SK258H O-218 2SK695 2SK695A 2SK4111 2SK4110 2SK4106 2sk4112 2sk2671 2sk4113 2SK2648 2N5121 2N5160 equivalent 2SK2666

    2SK847

    Abstract: 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794
    Text: STI Type: 2SK696 Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 4.0 Trans Conductance Mhos: 1.2 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: TO-247


    Original     		PDF 2SK696 O-247 2SK719 2SK696A O-205AD/TO-39: 2N3374 2N3352 2SK847 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


    Original     		PDF IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80

    SSH6N80

    Abstract: ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020
    Text: STI Type: MTM8N55 Notes: Breakdown Voltage: 550 Continuous Current: 8 RDS on Ohm: .50 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.5 Gate Threshold min: Gate Threshold max: Resistance Switching ton: 70 Resistance Switching toff: 430 Resistance Switching ID: 4.0


    Original     		PDF MTM8N55 O-204AA/TO-3 MTM8N60 MTM8N40 O-262/I-2 SSI2N60B SSI4N60B SSH6N80 ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020

    2SK1411

    Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
    Text: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0


    Original     		PDF 2SK1358 O-247 2SK1359 2SK1362 2SK2563 2SK2568 2SK1411 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225

    BUZ901P

    Abstract: BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410
    Text: STI Type: BUZ341 Notes: Breakdown Voltage: 200 Continuous Current: 33 RDS on Ohm: 0.07 Trans Conductance Mhos: 15 Trans Conductance A: 21 Gate Threshold min: 2.1 Gate Threshold max: 4.0 Resistance Switching ton: 60 Resistance Switching toff: 680 Resistance Switching ID: 3.0


    Original     		PDF BUZ341 O-247 BUZ344 BUZ346 O-204AA/TO-3: DTS409 DTS410 BUZ901P BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410

    IRF470

    Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
    Text: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0


    Original     		PDF IRF331 O-204AA/TO-3 IRF332 2N6012 O-247 IRFP352R IRFP353R IRF470 IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R

    2N7058

    Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
    Text: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20


    Original     		PDF VNL005A O-204AA/TO-3 VNM006A VNM005A 2N1717 2N1890 O-205AD/TO-39 2N7058 ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066

    PG-PC-H-0307

    Abstract: Hi-Tech Fuses CL fuse PG-PC-H HTSX33 Hi-Tech Fuses
    Text: PROTECTION AND CONTROL Trans-Guard SX Fuses The Trans-Guard™ SX full-range currentlimiting fuse provides both overload and fault SX Full-Range CL Fuses current protection for distribution equipment in a single fuse body. As a full-range fuse, it is capable of interrupting any continuous current


    Original     		PDF PG-PC-H-0307 PG-PC-H-0307 Hi-Tech Fuses CL fuse PG-PC-H HTSX33 Hi-Tech Fuses

    Untitled

    Abstract: No abstract text available
    Text: Technical Specification IQ68xxxQMXxx 12-150V 170V 5-48V 26.4W Continuous Input Trans. Input Outputs Max Power 3000V dc The InQor Quarter-brick converter series is composed of next-generation, board-mountable, REINFORCED INSULATED, fixed switching frequency dc-dc converters


    Original     		PDF IQ68xxxQMXxx 2-150V

    TIL112

    Abstract: Phototransistor til 81 OF til 81 TIL115 TIL 143 TIL 115 H11A1 H11A2 H11B1 H11D2
    Text: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60


    OCR Scan     		PDF H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 TIL112, TIL115 TIL112 Phototransistor til 81 OF til 81 TIL 143 TIL 115

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transìstor BUK564-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a


    OCR Scan     		PDF BUK564-200A BUK564-200A

    Untitled

    Abstract: No abstract text available
    Text: £ ÿ T SGS-THOMSON ¡»SÄilLlSSrafflei BUV28 SILICON NPN SWITCHING TRANSISTOR . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSÌSTOR VERY LOW SATURATION VOLTAGE FAST TURN-OFF AND TURN-ON APPLICATIONS: . SWITCHING REGULATORS . SOLENOID/RELAY DRIVERS DESCRIPTION


    OCR Scan     		PDF BUV28 300ns,

    mospet

    Abstract: PdP025
    Text: Philips Semiconductors Product specification PowerMOS transìstor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSPET in a 3 pin plastic surface mount envelope, intended as a


    OCR Scan     		PDF BUK108-50GL mospet PdP025

    DG508

    Abstract: No abstract text available
    Text: DG408 DG409 3 HARRIS SEMICONDUCTOR PRELIMINARY Single 8-Channel/Differential 4-Channel CMOS Analog Multiplexers July 1992 Description Features ON-Resistance 100ft Maximum +25°C) Low Power Consumption (PD < 11mW) Fast Switching Action " t TRANS< 250,18 • l ON/OFF(EN) <


    OCR Scan     		PDF DG408 DG409 100ft 150n8 DG508/DG509 DG408 DB409 DG508 DG509 DG408,

    Mitsubishi transistor

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSÌSTOR MODULES ! QM800HA-2HB ! HIGH POWER SWITCHING USE INSULATED TYPE ! QM800HA-2HB • lc Collector cu rre n t. 800A • V cex Collector-em itter • hFE DC current g am . 750 . v o lta g e 1000V


    OCR Scan     		PDF QM800HA-2HB E80276 E80271 Mitsubishi transistor

    k03d3

    Abstract: 2N3303 MPQ3303 SFT01 4PD4
    Text: MPQ3303 silicon QUAD DUAL-IN-LINE NPN SILICON ANNULAR LOW-VOLTAGE HIGH-CURRENT TRANSISTORS QUAD DUAL-IN-LINE NPN SILICON LOW VOLTAGE HIGH CURRENT SWITCHING TRANSISTORS . , . designed fo r high-current, high-speed switching, and MOS trans­ lator applications.


    OCR Scan     		PDF MPQ3303 2N3303 O-116 k03d3 2N3303 MPQ3303 SFT01 4PD4

    Marking S5j

    Abstract: 47Kti KSR1112 KSR2112
    Text: SAMSUNG SEMICONDUCTOR INCITES-1\i m e D | 7^41*45 OOQ^ObO .T | KSR1112 NPN EPITAXIAL SILICON TRANSÌSTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching Circuit, Inverter, Interface circuit Driver circuit • Built In bias Resistor (R=47Kfi)


    OCR Scan     		PDF KSR1112 47Kti) KSR2112 OT-23 Marking S5j 47Kti KSR2112

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC MJD29/29C 42E D B 7=^4142 000=100=1 fi EBSMGK NPN EPiTAXSAL SILICON TRANSÌSTOR GENERAL PURPOSE AMPLIFIER, LOW SPEED SWITCHING APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • Lead Formed for Surface Mount Applications No Suffix


    OCR Scan     		PDF MJD29/29C TIP29 TIP29C 200mA

    30TF-HB

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSÌSTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30TF-HB • Ic Collector current. 30A • V ce X Collector-em itter v o lta g e . 600V • hFE DC current g a in . 750


    OCR Scan     		PDF QM30TF-HB 30TF-HB E80276 E80271 30TF-HB

    BUK10B-50US

    Abstract: philips ldh d6506 BUK106-50L BUK106-50S buk106
    Text: bSE » PHILIPS INTERNATIONAL • 7110fl2b D0b3flbS 2TM BiPHIN Product Specification Philips Semiconductors PowerMOS transìstor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic


    OCR Scan     		PDF 7110fl2b BUK106-50L7S BUK106-50LP/SP BUK106-50L/S BUK106-50I7S BUK10B-50US philips ldh d6506 BUK106-50L BUK106-50S buk106

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transìstor BUK106-50L/S Logic level TOPFET_ BUK106-50LP/SP DESCRIPTION Monolithic temperature and overloadprotected logic level power MOSFET in a 5 pin plastic envelope, intended as a general


    OCR Scan     		PDF BUK106-50L/S BUK106-50LP/SP BUK106-50L BUK106-50S BUK106-5GL/S BUK106-50US