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    IXFH15N100 Search Results

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    IXFH15N100 Price and Stock

    IXYS Corporation IXFH15N100

    MOSFET N-CH 1000V 15A TO247AD
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    DigiKey IXFH15N100 Tube
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    IXYS Corporation IXFH15N100Q

    MOSFET N-CH 1000V 15A TO247AD
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    IXYS Corporation IXFH15N100Q3

    MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/15A
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    Mouser Electronics IXFH15N100Q3
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    Newark IXFH15N100Q3 Bulk 1
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    TTI IXFH15N100Q3 Tube 90 30
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    Vyrian IXFH15N100Q3 73
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    IXYS Corporation IXFH15N100P

    MOSFETs 15 Amps 1000V 0.76 Rds
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    Mouser Electronics IXFH15N100P
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    Verical IXFH15N100P 300 6
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    Quest Components IXFH15N100P 5
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    TME IXFH15N100P 300 1
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    Chip 1 Exchange IXFH15N100P 11,765
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    New Advantage Corporation IXFH15N100P 7,002 1
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    Littelfuse Inc IXFH15N100Q3

    Trans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247AD
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    Verical IXFH15N100Q3 16 1
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    Arrow Electronics IXFH15N100Q3 16 46 Weeks 1
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    RS IXFH15N100Q3 Bulk 8 Weeks 30
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    IXFH15N100 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFH15N100 IXYS HiPerFET Power MOSFETs Original PDF
    IXFH15N100 IXYS 1000V HiPerFET power MOSFET Original PDF
    IXFH15N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 15A TO-247 Original PDF
    IXFH15N100Q IXYS 1000V HiPerFET power MOSFET Q-class Original PDF
    IXFH15N100Q3 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 15A TO-247 Original PDF

    IXFH15N100 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXFH15N100Q3

    Abstract: IXFT15N100Q3
    Text: Advance Technical Information IXFT15N100Q3 IXFH15N100Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 1000V = 15A Ω ≤ 1.05Ω ≤ 250ns TO-268 (IXFT) G S D (Tab) Symbol Test Conditions


    Original     		IXFT15N100Q3 IXFH15N100Q3 250ns O-268 O-247 15N100Q3 IXFH15N100Q3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH15N100P IXFV15N100P IXFV15N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 15A Ω 760mΩ 300ns PLUS220 (IXFV) G D S Symbol Test Conditions


    Original     		IXFH15N100P IXFV15N100P IXFV15N100PS 300ns PLUS220 15N100P PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFH15N100P IXFV15N100P IXFV15N100PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 15A Ω 760mΩ 300ns PLUS220 (IXFV) G D S Symbol Test Conditions Maximum Ratings VDSS


    Original     		IXFH15N100P IXFV15N100P IXFV15N100PS 300ns PLUS220 15N100P PDF

    IXFH15N100P

    Abstract: 15N100P F15N PLUS220SMD 15n10 IXFH15N100
    Text: PolarTM Power MOSFET HiPerFETTM IXFH15N100P IXFV15N100P IXFV15N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G D S Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS


    Original     		IXFH15N100P IXFV15N100P IXFV15N100PS 300ns PLUS220 15N100P IXFH15N100P F15N PLUS220SMD 15n10 IXFH15N100 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiperFETTM Power MOSFETs Q3-Class VDSS ID25 IXFT15N100Q3 IXFH15N100Q3 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 1000V = 15A Ω ≤ 1.05Ω ≤ 250ns TO-268 (IXFT) G S Symbol Test Conditions


    Original     		IXFT15N100Q3 IXFH15N100Q3 250ns O-268 15N100Q3 PDF

    15N100

    Abstract: IXFH15N100 IXFH14N100 14N100 IXFT14N100 N100 CASE OUTLINE 55 BT- Style 1
    Text: VDSS HiPerFETTM Power MOSFETs IXFH/IXFT/IXFX14 N100 IXFH/IXFT/IXFX15 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 RDS on 1000 V 14 A 0.75 W 1000 V 15 A 0.70 W trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings


    Original     		IXFH/IXFT/IXFX14 IXFH/IXFT/IXFX15 14N100 15N100 15N100 IXFH15N100 IXFH14N100 14N100 IXFT14N100 N100 CASE OUTLINE 55 BT- Style 1 PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 p ^D25 DS on 1000 V 14 A 0.75 Q 1000 V 15 A 0.70 ß trr <200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data sheet Symbol Test Conditions v TJ Maximum Ratings


    OCR Scan     		IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 14N100 15N100 O-247 to150 PDF

    D1488

    Abstract: TO-247 AD
    Text: □ IX Y S VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14 N100 IXFH/IXFT/IXFX15 N100 N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family D ^D25 1000 V 14 A 1000 V 15 A trr < 200 ns D S o n 0.75 Q 0.70 Q Preliminary data sheet Maximum Ratings


    OCR Scan     		IXFH/IXFT/IXFX14 IXFH/IXFT/IXFX15 10TransientThermallmpedance D1488 TO-247 AD PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    IXAN0009

    Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
    Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power


    Original     		IXAN0009 IXAN0009 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w PDF

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 PDF

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


    Original     		IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS ID25 RDS on IXFH/IXFT/IXFX14N100 1000 V 14 A 0.75 W IXFH/IXFT/IXFX15N100 1000 V 15 A 0.70 W trr £ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions Maximum Ratings


    Original     		IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 O-247 IXFT14N100 IXFT15N100 125OC PDF

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


    OCR Scan     		ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 PDF

    15n10

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS ID25 RDS on IXFH/IXFT/IXFX14N100 1000 V 14 A 0.75 W IXFH/IXFT/IXFX15N100 1000 V 15 A 0.70 W trr £ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions Maximum Ratings


    Original     		IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 14N100 15N100 15N100 O-247 IXFT14N100 15n10 PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 PDF