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    IXFH14N100 Price and Stock

    IXYS Corporation IXFH14N100

    MOSFET N-CH 1000V 14A TO247AD
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    DigiKey IXFH14N100 Tube
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    IXYS Corporation IXFH14N100Q

    MOSFET N-CH 1000V 14A TO247AD
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    IXYS Corporation IXFH14N100Q2

    MOSFET N-CH 1000V 14A TO247AD
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    DigiKey IXFH14N100Q2 Tube 30
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    Mouser Electronics IXFH14N100Q2
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    IXYS Integrated Circuits Division IXFH14N100

    MOSFET DIS.14A 1000V N-CH TO247-3 HIPERFET THT
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    Ozdisan Elektronik IXFH14N100 1
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    IXFH14N100 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFH14N100 IXYS 1000V HiPerFET power MOSFET Original PDF
    IXFH14N100Q2 IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF

    IXFH14N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFH14N100Q2

    Abstract: G4050 14N100Q2
    Text: Preliminary Technical Information HiPerFETTM Power MOSFETs Q2-Class IXFH14N100Q2 VDSS = = ID25 RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol Test Conditions 1000V 14A Ω 950mΩ 300ns TO-247 (IXFH)


    Original     		PDF IXFH14N100Q2 300ns O-247 14N100Q2 5-28-08-B IXFH14N100Q2 G4050 14N100Q2

    IXFH14N100Q2

    Abstract: No abstract text available
    Text: Advanced Technical Data HiPerFETTM Power MOSFETs IXFH14N100Q2 VDSS = = ID25 RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 300 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF IXFH14N100Q2 O-247 728B1 123B1 728B1 065B1 IXFH14N100Q2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information HiPerFETTM Power MOSFETs Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr IXFH14N100Q2 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol Test Conditions 1000V 14A Ω 950mΩ 300ns TO-247 (IXFH)


    Original     		PDF IXFH14N100Q2 300ns O-247 14N100Q2 5-28-08-B

    15N100

    Abstract: IXFH15N100 IXFH14N100 14N100 IXFT14N100 N100 CASE OUTLINE 55 BT- Style 1
    Text: VDSS HiPerFETTM Power MOSFETs IXFH/IXFT/IXFX14 N100 IXFH/IXFT/IXFX15 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 RDS on 1000 V 14 A 0.75 W 1000 V 15 A 0.70 W trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFH/IXFT/IXFX14 IXFH/IXFT/IXFX15 14N100 15N100 15N100 IXFH15N100 IXFH14N100 14N100 IXFT14N100 N100 CASE OUTLINE 55 BT- Style 1

    IXFH32N50Q equivalent

    Abstract: ixfk24n100 IXFD80N20Q-8X IXFN80N50 1672 mos-fet IXFH40N30
    Text: HiPerFETTM Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss trr max. Chip type Chip size dimensions Source ¬ bond wire recommend Equivalent device data sheet Dim. outline No. V Ω


    Original     		PDF IXFD50N20-7X IXFD50N20Q-7X IXFD80N20Q-8X IXFD90N20Q-8Y IXFD120N20-9X IXFD180N20-9Y IXFD60N25Q-8X IXFD100N25-9X IXFD40N30-7X IXFD40N30Q-7X IXFH32N50Q equivalent ixfk24n100 IXFN80N50 1672 mos-fet IXFH40N30

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    Untitled

    Abstract: No abstract text available
    Text: IX6R11 6A Half-Bridge Driver Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX6R11 IX6R11 sigFH14N100Q IXTU01N100 IX6R11S6 IX6R11S3 IX6R11S3 IX6R11S6

    IX6R11S3

    Abstract: IX6R11P7
    Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX6R11 IX6R11 sigTU01N100 IXTU01N100 IX6R11S6 IX6R11S3 IX6R11S3 IX6R11S6 IX6R11P7

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    IXAN0009

    Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
    Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power


    Original     		PDF IXAN0009 IXAN0009 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w

    U4008

    Abstract: IX6R11P7 IX6R11S3 IXFK21N100F 18PIN 18-PIN IX6R11 IX6R11S6
    Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX6R11 IX6R11 IXTU01N100 IX6R11S3 IX6R11S6 IX6R11S3 IX6R11S6 U4008 IX6R11P7 IXFK21N100F 18PIN 18-PIN

    IX6R11P7

    Abstract: No abstract text available
    Text: IX6R11 600 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 600V • ± 50V/ns dV/dt immunity


    Original     		PDF IX6R11 IX6R11 IX6R11S6 IX6R11S3 IX6R11P7

    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


    Original     		PDF

    VCH20

    Abstract: IX6R11P7 ixdd414 IXFK21N100F 18PIN 18-PIN IX6R11 IX6R11S3 IX6R11S6 ixys mosfet
    Text: IX6R11 6A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers


    Original     		PDF IX6R11 IX6R11 IXFH14N100Q IXTU01N100 IX6R11S3 IX6R11S6 IX6R11S3 IX6R11S6 VCH20 IX6R11P7 ixdd414 IXFK21N100F 18PIN 18-PIN ixys mosfet

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


    Original     		PDF IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80

    IXFD21N100F-8F

    Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
    Text: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005


    Original     		PDF IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD180N085-9X IXFD280N085-9Y IXFD75N10-7X IXFD80N10Q-8X IXFD170N10-9X IXFD230N10-9Y IXFD70N15-7X IXFD21N100F-8F IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50

    IXCP10M90S

    Abstract: IX6R11S6 18-PIN 10m90s
    Text: IX6Q11 1 MHz, 300 Volt, 6 Ampere High & Low-side Driver for N-Channel MOSFETs and IGBTs Features General Description • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 300V* • ± 50V/ns dV/dt immunity


    Original     		PDF IX6Q11 IX6Q11 IXTU01N100 IX6Q11S3 IX6Q11S6 IXCP10M90S IX6R11S6 18-PIN 10m90s

    15N100

    Abstract: IXFH15N100 IXFH14N100 IXFT14N100
    Text: HiPerFETTM Power MOSFETs VDSS ID25 RDS on IXFH/IXFT/IXFX14N100 1000 V 14 A 0.75 W IXFH/IXFT/IXFX15N100 1000 V 15 A 0.70 W trr £ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 O-247 IXFT14N100 IXFT15N100 125OC 15N100 IXFH15N100 IXFH14N100 IXFT14N100

    Untitled

    Abstract: No abstract text available
    Text: VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 p ^D25 DS on 1000 V 14 A 0.75 Q 1000 V 15 A 0.70 ß trr <200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data sheet Symbol Test Conditions v TJ Maximum Ratings


    OCR Scan     		PDF IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 14N100 15N100 O-247 to150

    D1488

    Abstract: TO-247 AD
    Text: □ IX Y S VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14 N100 IXFH/IXFT/IXFX15 N100 N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family D ^D25 1000 V 14 A 1000 V 15 A trr < 200 ns D S o n 0.75 Q 0.70 Q Preliminary data sheet Maximum Ratings


    OCR Scan     		PDF IXFH/IXFT/IXFX14 IXFH/IXFT/IXFX15 10TransientThermallmpedance D1488 TO-247 AD

    IXFD14N80

    Abstract: CMP 3.48 ixfh50n20 1XFH12N90 IXFN170N10 diode 348 IXFD110N20 IXFD76N07-12 IXFD21N50 IXFH21N50
    Text: OIXYS HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type v c * D6S tN BL tn CMp max *yp * Chip elze Source 3 b e n tlw li« Equivalent device dutaahaet T * * tS O * G out­ line NO PF na 70 0.012 5 4400 200 IX77 8 .8 4 x 7 .1 9


    OCR Scan     		PDF IXFD76N07-12 XFD67N10 IXFD75N10 IXFD170N10 IXFD42N20 IXFD50N20 IXFD68N20 1XFD90N20Q IXFD110N20 IXFD35N30 IXFD14N80 CMP 3.48 ixfh50n20 1XFH12N90 IXFN170N10 diode 348 IXFD76N07-12 IXFD21N50 IXFH21N50

    IXFH14N100Q2

    Abstract: IXFH12N90Q
    Text: □IXYS 3540 Bassett Street Santa Clara, CA 95054, USA Phone: +1-408-982-0700 Fax: +1-408-727-7087 May 05, 2005. PRODUCT DISCONTINUANCE NOTIFICATION # 050419 IXYS product type: IXFH12N90Q Reason for discontinuance: Manufacturing stability Last buy date: October 1, 2005.


    OCR Scan     		PDF IXFH12N90Q IXFH14N100Q2. IXFH14N100Q2 IXFH12N90Q