TPC8401 Search Results

diode ja8

Contextual Info: TOSHIBA TPC8401 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N, P C HANNEL MOS TYPE U -M O S II TPC8401 LITH IU M ION SECONDARY BATTERY NOTE B O O K PC PORTABLE DEVICES • INDUSTRIAL APPLICATIONS Unit in mm SOP-8 Low Drain-Source ON Resistance : P CHANNEL RDs (ON) = 27 mH (Typ.)

Contextual Info: T O SH IB A TENTATIVE TPC8401 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N, P CHANNEL MOS TYPE U -M O SII TPC8401 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm SOP-8

TPC8401

Contextual Info: TOSHIBA TENTATIVE TPC8401 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N, P CHANNEL MOS TYPE U-MOSII TPC8401 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SOP-8 •

Contextual Info: TPC8401 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type U−MOSII TPC8401 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.)

TPC8401

Abstract: 3B marking DEVICE MARKING CODE 3B MARKING 3b
Contextual Info: TPC8401 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type U−MOSII TPC8401 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.)

Contextual Info: TPC8401 TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type U−MOSII TPC8401 Lithium-Ion Secondary Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.)

Contextual Info: TPC8401 TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type U−MOSII TPC8401 Lithium-Ion Secondary Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.)

Contextual Info: TPC8401 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type U−MOSII TPC8401 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.)

Contextual Info: TPC8401 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type U−MOSII TPC8401 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.)

Contextual Info: TOSHIBA TPC8401 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N, P CHANNEL MOS TYPE U-MOSII TPC8401 LITHIUM ION SECONDARY BATTERY NOTE BOOK PC PORTABLE DEVICES • Low Drain-Source ON Resistance : P CHANNEL RDg (QN) = 27 m il (Typ.) N CHANNEL Rd S(ON) = 14 m il (Typ.)

Contextual Info: TPC8401 TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type U−MOSII TPC8401 Lithium Ion Secondary Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.)

TPC8401

Contextual Info: TPC8401 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type U−MOSII TPC8401 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.)

Contextual Info: TOSHIBA TPC8401 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N, P C HANN EL MOS TYPE U -M O S II TPC8401 LITH IU M ION SECONDARY BATTERY INDUSTRIAL APPLICATIONS U nit in mm NOTE B O O K PC SOP-8 PORTABLE DEVICES • Low Drain-Source ON Resistance : P CHANNEL RDg (QN) = 27

TPC8401

Contextual Info: TO SH IBA TPC8401 TOSHIBA FIELD EFFECT TRANSISTOR LITHIUM ION SECONDARY BATTERY SILICON N, P CHANNEL MOS TYPE U-M O SII TPC8401 NOTE BOOK PC PORTABLE DEVICES • Low Drain-Source ON Resistance : P CHANNEL R n« rmvn = 27 mH (Tvü.) N CHANNEL R d S (ON) = 14 mH (Typ.)

Contextual Info: TPC8401 TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type U−MOSII TPC8401 Lithium-Ion Secondary Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.)

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

tpc8107

Abstract: tpc8107 mosfet TPC8107 application circuit 7179 TPCS8210 application TPC8110 tpc8107 equivalent US6 KEC MAX1717 TPC6002
Contextual Info: Power MOSFETs TPC Series PRODUCT GUIDE Toshiba Power Compact Series devices have been developed for use in high-speed switching applications and in various interfaces. Toshiba has developed this high-efficiency low ON-resistance series using processes specially formulated to ensure that the devices can be used in

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1

2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

2SK3878 equivalent

Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Contextual Info: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)

2SK4207

Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

TPCA*8064

Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509