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    TP4861 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TP4861 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    TP4861 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    TP4861 Sprague N-Channel JFETs Scan PDF
    TP4861A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    TP4861A Sprague N-Channel JFETs Scan PDF
    TP4861R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    TP4861 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E112 FET

    Abstract: E112 N-Channel FET SILICONIX E112 2SK582 2SK518J MMBF4861 KE4093 TO226AA MMBF4860 InterFET
    Text: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) g. Max loss Max (V) (A) VOS(off) Min (S) Max Clas Max (F) PD Max (W) Derate at (WrC) Toper Max eC) Package Style N-Channel JFETs, (Co nt' d) 5 10 15 20 2SK582 UG251 KE4861 MMBF4861 PN4861


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    PDF 2SK582 UG251 KE4861 MMBF4861 PN4861 SMP4861 SMP4861A TMPF4861 TMPF4861A E112 FET E112 N-Channel FET SILICONIX E112 2SK518J KE4093 TO226AA MMBF4860 InterFET

    DIODE 20B2

    Abstract: TP4213 TP2658 SHEET15 30B4 diode 37 TV samsung lcd Schematic circuit diagram TP5000 alviso-GM 30B4 BA92-03859A
    Text: SAMSUNG X06 GUO LEI ZHOU JUN DRAW Model Name : PBA Name : PCB Code : Dev. Step : Revision : T.R. Date : CPU : Chip Set : Remarks : CHEN TAO CHECK KEVIN LEE APPROVAL X06 BA92-03859A BA41-00529A MP 1.0 2005-6-25 Dothan Intel Alviso + ICH6-M Internal Gfx. Aquila-So


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    PDF Sheet10. Sheet11. Sheet12. Sheet13. Sheet14. Sheet15. Sheet16. Sheet17. Sheet18. Sheet19. DIODE 20B2 TP4213 TP2658 SHEET15 30B4 diode 37 TV samsung lcd Schematic circuit diagram TP5000 alviso-GM 30B4 BA92-03859A

    TP5000

    Abstract: TP5056 TP4506 TP5351 TP5046 TP4656 TP4650 TP4780 TP5006 TP5299
    Text: 1 2 9TP4721 10 TP4722 T4 TP4723 13 TP5086 TP5087 1 2 TP5088 TP4727 3 4 TP5089 BPRI# W1 A7# DEFER# A8# DRDY# A9# W2 Y4 A10# Y1 A11# A12# U1 A13# AA3 DBSY# RESET# RS0# REQ1# RS1# REQ2# RS2# BANIAS REQ3# T1 REQ4# 478FCPGA 13 13 13 13 C 13 13 AE4 24 TP5097 TP5098


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    PDF 3TP4715 TP4716 5TP4717 TP4718 7TP4719 TP4720 9TP4721 TP4722 TP4728 TP4729 TP5000 TP5056 TP4506 TP5351 TP5046 TP4656 TP4650 TP4780 TP5006 TP5299

    C65 004

    Abstract: A65 SMD W17 SMD transistor SMD w35 Transistor w33 SMD sot 23 w45 SOT A29 SMD epson c87 smd a60 smd transistor a68
    Text: TLV320AIC10 EVM User’s Guide February 2000 AAP Data Converter Group SLWU003 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information


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    PDF TLV320AIC10 SLWU003 12X3X PEG36TS-TBR 4-Feb-2000 A3\EVMS\AIC10EVM C65 004 A65 SMD W17 SMD transistor SMD w35 Transistor w33 SMD sot 23 w45 SOT A29 SMD epson c87 smd a60 smd transistor a68

    TP4506

    Abstract: TP5000 AR803 TP6244 thermistor SCK D54 TP5056 R767 TP5310 TP6311 TP4765
    Text: 1 2 HD# 0:63 1 1 3 4 N C 5 6 HA#(3:31) C D 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 1,4 29 H_REQ#(0:4) 30 31 1 32 2 33 4 35 1,4 36 DBI#(0:3) 1 38 2 39 3 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 1, 4 1 1, 4 1 4 4 1, 4


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    PDF TP4698 TP4699 TP4700 TP4701 TP4702 TP4703 TP4658 TP4659 TP4660 TP4661 TP4506 TP5000 AR803 TP6244 thermistor SCK D54 TP5056 R767 TP5310 TP6311 TP4765

    TP4213

    Abstract: TP2658 30B4 diode DIODE 20B2 diode 30b4 tp4203 TP2923 aLC665 37 TV samsung dvd Schematic circuit diagram 26c4
    Text: SAMSUNG X06 Dothan Intel Alviso + ICH6-M Internal Gfx. Sheet1. Sheet2. Sheet3. Sheet4. Sheet5. Sheet6. Sheet7. Sheet8. Sheet9. Sheet10. Sheet11. Sheet12. Sheet13. Sheet14. Sheet15. Sheet16. Sheet17. Sheet18. Sheet19. Sheet20. Sheet21. Sheet22. Sheet23. Sheet24.


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    PDF Sheet10. Sheet11. Sheet12. Sheet13. Sheet14. Sheet15. Sheet16. Sheet17. Sheet18. Sheet19. TP4213 TP2658 30B4 diode DIODE 20B2 diode 30b4 tp4203 TP2923 aLC665 37 TV samsung dvd Schematic circuit diagram 26c4

    C27-C36

    Abstract: TP5000 M1535 a1 RS200M TP4506 TP5056 TP4721 TP5860 J5027 TP4456
    Text: 1 2 3 4 12 3 4 5 6 7 8 9 6 . M 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 DBI# 0:3 K2 K4 L6 K1 L3 M6 L2 M3 M4 N1 M1 N2 N4 N5 T1 R2 P3 P4 R3 T2 U1 P6 U3 T4 V2 R6 W1 T5 U4 V3 W2 Y1 AB1 1 2 3 4 4 12 4 12 B H_ADS# H_BNR# H_BPRI# L5 ADSTB0#


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    PDF PAGE45 PAGE47 6870BE C27-C36 TP5000 M1535 a1 RS200M TP4506 TP5056 TP4721 TP5860 J5027 TP4456

    tp5950

    Abstract: No abstract text available
    Text: SPR AGU E/ SE MIC ON D GROUP 8 5 1 4 0 1 9 SPRAGUE, T3 D • 0513350 00Q3b01 S E M I C O N D S / ICS h M 93D 03601 J> 7 ^ ^ -Z .S - PLAST1C-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C VgS oH V(BRJGSS Limits


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    PDF 00Q3b01 TP4858A TP4659 TP4859A TP4860 TP4860A TP4861 TP4861A TP4867 TP4868 tp5950

    TP4221

    Abstract: No abstract text available
    Text: N-CHANNEL JFETs TO -92ITO -226AA ELECTRICAL CHARACTERISTICS a t TA = 25°C v * GS oft D evice Type v (8RJGSS Min. @ IG L im its *GSS Max. @ V DS Min. C o n d itio n s Max. V DS 'o (V) ^DSS Min. Max. C ss 9 .s 1 c ASS ros @ V DS Min. Max. @ V DS Max. @ V DS


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    PDF -92ITO -226AA 2N3819 TP3821 TP3822 TP3823 TP3824 TP4091 TP4092 TP4093 TP4221

    bc 7-25 pnp

    Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
    Text: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30


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    PDF 1N914 1N4148 1N4150 1N5229 1N5230 1N5231 1N5232 1N5233 1N5234 1N5235 bc 7-25 pnp transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA

    tp4093

    Abstract: TMPT5401 mA 723 TMPT2907 TP4221
    Text: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type v BR CBO V ’ (BR)CEO (BR)EBO Max. @ V C8 (V) (V) (V) (nA) (V) v CE(MI) DC Current Gain K* @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)


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    PDF BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D BCW68F BCW68G BCW69 BCW70 tp4093 TMPT5401 mA 723 TMPT2907 TP4221

    bc 7-25 pnp

    Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
    Text: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K


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    PDF 1N914 1N4148 1N4150 1N4565 1N4565A 1N4566 1N4566A 1N4570 1N4570A 1N4571 bc 7-25 pnp transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor

    2N5485

    Abstract: TP5668 NJ132 NJ16 TP4858A TP4859 TP4859A TP4860 TP4860A TP4861
    Text: SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE, T3 D • 0513350 00Q3b01 SE MI C ON DS /ICS 93D 03601 h M J> 7 ^ ^ -Z .S PLAST1C-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C VgS oH V(BRJGSS Limits Igss Min. (V) IG


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    PDF DD03b01 TP4858A NJ132 TP4859 TP4859A O-226AA/STYLES 2N5485 TP5668 NJ132 NJ16 TP4860 TP4860A TP4861

    2N5458

    Abstract: TP4221
    Text: ALLEGRO MICROSYSTEMS INC blE D • 0504338 0 0 D b 3 f l T b b S * A L G R N-CHANNEL JFETs ■■"T-27'ts T O -9 2 /T O -2 2 6 A A ELECTRICAL CHARACTERISTICS a t TA = 25°C V GSfoff Device Type *gss Limits Max. @ VDS V) <nA) Min. Max. V.BR)GSS Min. Conditions


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    PDF 2N3819 TP3821 TP3822 TP3823 TP3824 TP4091 TP4092 TP4093 TP4117 TP4118 2N5458 TP4221

    tp5950

    Abstract: No abstract text available
    Text: ALL E GR O MICROSYSTEMS 8514019 INC =13 SPRAGUE. D • GS0M33Ö G G O B b O l S ■ ALGR SEM ICO NDS/ IC S 93D 03601 J> P LA ST IC -C A SE JUNCTION FIELD-EFFECT T RA N SISTO R S N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oH V(BR1GSS Limits


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    PDF GS0M33Ö TP4858A TP4859 TP4859A TP4860 TP4860A TP4861 TP4861A TP4867 TP4868 tp5950

    TP4221

    Abstract: 2n 5459 DSG20 ALLEGRO M I C R O S Y S T E M S INC
    Text: •• - f * ALLE6R0 MICROSYSTEMS INC' 33E D • • .'••■•'v v Q5G433Ô QOGSb'ib Ô « [ AL GR ; if.: ■ ■ ïâ M S e M ■Æ ÊÊm '■"h ^ - o s T O *9 2 / T O - 2 2 6 A A ELECTRICAL CHARACTERISTICS a t T\ = 25°C A - ^GSioff Óóvlce Type V)


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    PDF Q5G433Ô 2N3819 TP3821 TP3822 TP3824 TP4091 TP4092 TP4093 TP4117 TP4118 TP4221 2n 5459 DSG20 ALLEGRO M I C R O S Y S T E M S INC