TP264 Search Results

Contextual Info: TP2635 TP2640 Supertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ R d S ON ^ G S (th ) ' d (ON) B V dgs (max) (max) (min) SO-8 TO-92 Diet -350V i5 n -2.0V -0.7A - TP2635N3 TP2635ND

A773* Transistor

Abstract: TP2635 TP2635LG TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND A773
Contextual Info: TP2635 TP2640 Supertex inc. Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON b v dgs (max) (max) (min) SO-8 TO-92 DICEt -350V 15£2 -2.0V 0.7A TP2635LG TP2635N3 TP2635ND -400V

P2640

Abstract: 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel
Contextual Info: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

Contextual Info: TP2640LG Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)700m @Temp (øC)150# IDM Max (@25øC Amb)1.25 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.3# Minimum Operating Temp (øC)-55

Contextual Info: Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TP2640 General Description Low threshold -2.0V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown

Contextual Info: TP2635/TP2640 P- Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

Contextual Info: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

TP2635

Abstract: TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND
Contextual Info: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 — -400V 15Ω -2.0V -0.7A

Contextual Info: TP2635 TP2640 S u p e rte x inc. Low Thresh old Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R ds on BVdgs (max) (max) -350V 15Q -2.0V -400V 15Q -2.0V Order Number / Package !f b v dss / SO-8 TO-92 DICE* 0.7A TP2635LG TP2635N3

TP2640

Contextual Info: TP2640 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 70 70 11 ± 1.5 Au 1 (mils) TP2640 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

7A, 100v fast recovery diode

Abstract: TP2635 TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND
Contextual Info: TP2635/TP2640 TP2635 TP2640 Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 DICE† -350V 15Ω -2.0V -0.7A – TP2635N3

Contextual Info: TP2635 TP2640 I_0W Threshold S iM fM C rtG X in c . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BVDSS / ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min) SO-8 TO-92 Diet -350V 15& -2.0V -0.7A - TP2635N3 — -400V

Contextual Info: TP2640N3 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)200m @Temp (øC)150# IDM Max (@25øC Amb)800m @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55

Contextual Info: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

TP2635

Abstract: TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND
Contextual Info: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 — -400V 15Ω -2.0V -0.7A

TP2635

Abstract: TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND
Contextual Info: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 TP2635ND -400V 15Ω -2.0V

Contextual Info: Prelim inary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(th) I d (ON) BVdgs (max) (max) (min) SO-8 TO-92 DICE+ -350V 15Q -2.0 V -0.7A - TP2635N3 TP2635ND -400V 15Q -2.0 V -0.7A TP2640LG TP2640N3

Contextual Info: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

LG 42 t

Contextual Info: TP2424 TP2424 Low Threshold Pre-Release Information P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* -240V 8.0Ω -2.4V -800mA TP2424N8 * Same as SOT-89.

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G

6JK3

Abstract: BC733 bc735 usb common mode choke BC380 BC628 MMDR BC148 pin configuration BC702 Wistron Corporation
Contextual Info: A B C D E D H2 BLOCK DIAGRAMVER.-4 Project Code 4 4,5 3 ICS 94239 M/B D/D LAUNCH CDROM IR 2ND HDD DESKTOP CPU For ENG Willamette For M/P Northwood CLK GEN 6 0.18u 1.3G~1.8G G768D 0.13u 2.0G~2.4G 500mA; 600mA 15 7,8 9,10,11 3 2002/06/06 DDR*2 MCH 15 ATI P6