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    TO225AA CASE 77 Search Results

    TO225AA CASE 77 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet
    CS-DSDMDB37MM-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft Datasheet

    TO225AA CASE 77 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C106D1 pin out diagram

    Abstract: C106 MG C106MG c106d pin out c106mg pin out scr c106mg equivalent SCR c106 SCR C106D equivalent circuit show to-225aa package SCR C106m
    Text: C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is


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    PDF C106B, C106/D C106D1 pin out diagram C106 MG C106MG c106d pin out c106mg pin out scr c106mg equivalent SCR c106 SCR C106D equivalent circuit show to-225aa package SCR C106m

    BD436

    Abstract: TRANSISTOR bd436 Power Transistors TO-225aa Case BD437 BD438 BD440 BD441 BD442 transistor Bu BD438 pin out
    Text: BD436, BD438, BD440, BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


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    PDF BD436, BD438, BD440, BD442 BD437 BD441. r14525 BD438/D BD436 TRANSISTOR bd436 Power Transistors TO-225aa Case BD438 BD440 BD441 BD442 transistor Bu BD438 pin out

    to225

    Abstract: No abstract text available
    Text: 2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are


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    PDF 2N6071A/B 2N6071A 2N6073A 2N6075A 2N6071A, 2N6071B O-225 \\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000817\08162000 3\ONSM\08032000 to225

    c106d pin out

    Abstract: SCR 1 c106d scr C106B c106 scr c106d1 scr c106d application notes C106D to-126 C106 Series C106d silicon controlled rectifier C106 Series scr
    Text: C106 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is


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    PDF C106B, C106M1 O-225 00V-04 \\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000817\08162000 3\ONSM\08032000 C106M1T c106d pin out SCR 1 c106d scr C106B c106 scr c106d1 scr c106d application notes C106D to-126 C106 Series C106d silicon controlled rectifier C106 Series scr

    Untitled

    Abstract: No abstract text available
    Text: tSe.mi-Conciu.cko'i ^Pioducti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJE3439 NPN Silicon High-Voltage Power Transistors 0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 15 WATTS . . . designed for use in line-operated equipment requiring high ff.


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    PDF MJE3439 O-225AA

    Thyristor Device Data motorola

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MCR106/D SEMICONDUCTOR TECHNICAL DATA MCR106 Series* Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors *Motorola preferred devices except MCR106–3 PNPN devices designed for high volume consumer applications such as


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    PDF MCR106/D MCR106 Thyristor Device Data motorola

    Case 77-08

    Abstract: MCR106-3 MCR106-2
    Text: MOTOROLA Order this document by MCR106/D SEMICONDUCTOR TECHNICAL DATA MCR106 Series* Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors *Motorola preferred devices except MCR106–3 PNPN devices designed for high volume consumer applications such as


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    PDF MCR106/D MCR106 MCR106 MCR106/D* Case 77-08 MCR106-3 MCR106-2

    2322BG

    Abstract: T2322BG T2322B
    Text: T2322B Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for ac power switching. The gate sensitivity of these triacs permits the use of economical transistorized or integrated circuit control circuits, and it enhances their use in low-power phase


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    PDF T2322B T2322/D 2322BG T2322BG T2322B

    Untitled

    Abstract: No abstract text available
    Text: T2322B Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for ac power switching. The gate sensitivity of these triacs permits the use of economical transistorized or integrated circuit control circuits, and it enhances their use in low-power phase


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    PDF T2322B T2322/D

    mje802

    Abstract: No abstract text available
    Text: ^Eini-donduatoi ^Products., Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. PNP Plastic Darlington Complementary Silicon Power Transistors . . . designed for general-purpose amplifier and low-speed switching applications.


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    PDF MJE700 MJE800 T0220AB, MJE700T MJE800T MJE800J MJE702 MJE703 MJE802 mje802

    tip1012

    Abstract: 2N3055-3 MJ15024 MJ15025 2n3055 MJ15003 mj150* darlington mJE2003
    Text: ON Semiconductor Bipolar Power Transistors Bipolar Power Transistors Plastic Isolated TO-220 Type Pin: 1 Ñ Base, 2 Ñ Collector, 3 Ñ Emitter (Style 2, Case 221D-02) Mfr.Õs Type NPN MJF1222 MJF1272 MJF44H11 MJF45H11 2 MJF6388 MJF66682 1 Resistive Switching


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    PDF O-220 221D-02) 340G-01) MJF122 MJF127 MJL3281A MJ14002 MJ14003 MJ10021 MJW16018 tip1012 2N3055-3 MJ15024 MJ15025 2n3055 MJ15003 mj150* darlington mJE2003

    chotherm 1674

    Abstract: P4855-1 TC-30AG 32-microinch TO3 SILICONE MICA SHEET torque for SELF TAPPING SCREW 87-HS-9 to225a SIL-PAD density Case 806-05
    Text: SECTION 7 MOUNTING TECHNIQUES FOR THYRISTORS Edited and Updated Figure 7.1 shows an example of doing nearly everything wrong. A tab mount TO-220 package is shown being used as a replacement for a TO-213AA TO-66 part which was socket mounted. To use the socket, the


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    PDF

    MJE520

    Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
    Text: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic


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    PDF -204AA -204AE T0-204A 97A-02 O-205AD BUS51 BUV21 BUV11 2N6249 BUX41 MJE520 bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u

    mtp25n06

    Abstract: MTP12P05 MTP3055A MTP14N05A BUZ11 motorola MTP15N06 BUZ11 MTP5N05 T0-225AA MTP15N05
    Text: POWER TRANSISTORS — TMOS PLASTIC continued Plastic TMOS Power MOSFETs — T0-220AB (continued) C A S E 221A-02 VBR(DSS) (Volts) Min (Ohms) Max (Amp) 60 0.4 4 F'D @ TC = 25°C (Watts) Max IRF523 7 40 IRF521 8 Device 0.3 6 MTP12P06* 12 0.28 5 MTP10N06 10


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    PDF T0-220AB 21A-02 IRF523 IRF521 MTP12P06* MTP10N06 IRF533 MTP12N06 IRF531 MTP15N06 mtp25n06 MTP12P05 MTP3055A MTP14N05A BUZ11 motorola BUZ11 MTP5N05 T0-225AA MTP15N05

    MTP3055A

    Abstract: MTM12N06 mtp25n06 MTM20N08 irf150 MTH8P20 MTM35N05 MTP2P45 MTM10N05 BUZ11
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 rDS(on) Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08


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    PDF O-204AA IRF150* MTM55N10 MTM8N08 MTM8P08* MTM10N08 MTM12P08* MTM12N08 MTM20N08 MTM25N08Â MTP3055A MTM12N06 mtp25n06 irf150 MTH8P20 MTM35N05 MTP2P45 MTM10N05 BUZ11

    B0159

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by B0159/0 SEMICONDUCTOR TECHNICAL DATA ESDI 59 Plastic Medium Power NPN Silicon Transistor . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTOR


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    PDF B0159/0 BD159/D B0159

    B0139

    Abstract: b0135 bd140 cross reference TRANSISTOR B0135 NPN TRANSISTOR NPN B0135 BD232 motorola power transistor to-126 BD167 NPN/B0139-16 BD169
    Text: MOTOROLA SC XSTRS/R F 4fc>E D • b3b?254 OQT B H D ' l 0 «MOTb T ~ $2> ~ 0 3 TABLE 8 - PLASTIC TO-225 Type (Formerly TO-126 Type) STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE yggw STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER CASE 77-07 (TO-225AA) Resistive Switching


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    PDF O-225 O-126 O-225AA) MJE3439 MJE341 MJE344 2N5655 BD157 BD158 BD232 B0139 b0135 bd140 cross reference TRANSISTOR B0135 NPN TRANSISTOR NPN B0135 motorola power transistor to-126 BD167 NPN/B0139-16 BD169

    Je 243

    Abstract: JE371 je240 JE171 JE340 transistor BD 341 bd189
    Text: STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER 1 CASE 77-07 TO-225AA R e s is tiv e S w itc h in g Ic C o n t Am ps v C E O (s u s ) Volts M ax M in NPN 0.3 350 0 .5 »f @ ic US ps @ lc *T MHz Amp M ax M ax Amp


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    PDF O-225AA) 2N5655 BD157 2N5656 MJE803# MJE703# 750/18k BD681# BD682# JE210Â Je 243 JE371 je240 JE171 JE340 transistor BD 341 bd189

    N6034

    Abstract: TIC 122 Transistor 2M6039 2N6029 2N6034 2N6037 2N6039 K1461 2N6035 2N6036
    Text: M O TO R OL A SC X S T R S /R 15E D | F b3b?354 ' OGflHSfiO T | 2N602Ô 7 :3 J MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP NPN 2N6034 2N6035 2N6036 2N6037 2N6038 2N6039 PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 4-AMPERE . . « designed fo r general-purpose amplifier and low-speed switching


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    PDF 2N6029 2N6034 2N6035 2N6036 2N6037 2N6038 2N6039 2N6034, 2N6037 2N6035, N6034 TIC 122 Transistor 2M6039 2N6039 K1461 2N6036

    JE800

    Abstract: JE802 JE702 JE803 JE700 MOTOROLA MJE800-803 N5825 MJE700T MJE700T MJE800T
    Text: MOTOROLA Order this document by MJE700/D SEMICONDUCTOR TECHNICAL DATA PNP M JE700,T Plastic Darlington Com plem entary Silicon Power Transistors M JE702 M JE703 . . . designed for general-purpose amplifier and low -speed switching applications. • • •


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    PDF MJE700/D MJE700 MJE800 T0220AB, MJE700T MJE800T JE700 JE702 JE703 JE800 JE802 JE803 JE700 MOTOROLA MJE800-803 N5825 MJE700T MJE800T

    sc 6038

    Abstract: N6039 2N603 LT 7706 Motorola Mc 1461 to225aa 2N 6036 2N6037
    Text: MOTOROLA •SC XSTRS/R F 15E D I t3b75SM OOflMSflO Ì | T~33 ü j 2N602Ô thru MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP NPN 2N6034 2N6035 2N6036 2N6037 2N6038 2N6039 PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 4-AMPERE . . . designed for general-purpose amplifier and low-speed switching


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    PDF t3b75SM 2N602Ô 2N6034 2N6035 2N6036 2N6034, 2N6037 2N6035, 2N6038 2N6036, sc 6038 N6039 2N603 LT 7706 Motorola Mc 1461 to225aa 2N 6036 2N6037

    CR506

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCR506 Series Silicon Controlled Rectifiers . . . PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important.


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    PDF MCR506 O-225AA) CR506

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BD159/D SEMICONDUCTOR TECHNICAL DATA BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • • 0.5 AMPERE POWER TRANSISTOR


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    PDF BD159/D BD159 O-225AA

    JE3439

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJE3439/D SEMICONDUCTOR TECHNICAL DATA M JE3439 NPN Silicon H igh-V oltage Power Transistors . . . designed for use in line-operated equipm ent requiring high fj. • • • High DC Current Gain hpE = 4 0 -1 6 0 @ Iq = 20 mAdc


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    PDF MJE3439/D JE3439 O-225AA