Untitled
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ332A CASE OUTLINE: TO-218AA HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:
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O-218AA
BUZ332A
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Untitled
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ358 CASE OUTLINE: TO-218AA HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:
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O-218AA
BUZ358
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Untitled
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ334 CASE OUTLINE: TO-218AA HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:
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O-218AA
BUZ334
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LT082
Abstract: LT081 LT089 LT081S SML55405 transistors 1U BUR20 TC15U800
Text: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max hFE fT ICBO Max t0N Max on ON Min Hz) (A) (s) 300 325 350 400 400 400 400 425 425 450 700 625 230 300 625 885 1 7k 350 530 350 V(BR)CEO Max (A) PD r <CE)Mt Max (Ohms) Toper Max
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SDT55960
SML55462
PTC6683
2SD642
SML55464
D60T4040
D62T4040
SDT5825
SDT5855
SDT5826
LT082
LT081
LT089
LT081S
SML55405
transistors 1U
BUR20
TC15U800
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2N2090
Abstract: 2N2095A 2N2022 2N2040 Emihus 2N2020 2n2063 2n2038 2N2082 2N2003
Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 >= 30 Solitron PPC Product PPC Product Solitron Solitron PPC Product Sid St Dvcs Sid St Dvcs Sid St Dvcs Sid St Dvcs g~:~:g~ ~:~~: ~~: KSP1151 KSP1171 SOT7A07 SOT7A07 SOT7A07 SOT7607 SOT7607 SOn607
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OT85306
OT85506
OT85606
KSP1151
KSP1171
OT7A07
2N2090
2N2095A
2N2022
2N2040
Emihus
2N2020
2n2063
2n2038
2N2082
2N2003
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PDF
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SKC25K85
Abstract: ST29045 2SD319 P1743-0630 BUW18 SDT9701 1561-0810
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD Max hFE *T ON) Min (HZ) ICBO t0N r Max Max (A) (s) Max (Ohms) (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . -5 -10 -15 -20 . . -25
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GSRU20040
2SC2903
SKC25B70
SKC25B75
SKC25K85
2SC3988
2SC3455
2SC3989
BUP38
ST29045
2SD319
P1743-0630
BUW18
SDT9701
1561-0810
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Untitled
Abstract: No abstract text available
Text: N AflER PHILIPS/DISCRETE OLE D PowerMOS transistor • 0014550 7 BUZ358 r- -i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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OCR Scan
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BUZ358
T0218AA;
T-39-13
T0014flSS
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BUZ358
Abstract: LDM80
Text: N AMER PHILIPS/DISCRETE OLE D PowerMOS transistor bbSBTBl 0014050 7 BUZ358 r - 3 ^ - ls May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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OCR Scan
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bb53131
BUZ358
r-31-
T0218AA;
T-39-13
800VC
BUZ358
LDM80
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 382 SIPMOS Power Transistor • N channel • Enhancement mode V'IOys6 • FREDFET 3 Pin 1 Pin 2 Type BUZ 382 Vbs 400 V b 12.5 A flbSfon 0.4 w Pin 3 D G S Package Ordering Code TO-218AA C67078-A3207-A2 Maximum Ratings Parameter Symbol Drain source voltage
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OCR Scan
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O-218AA
C67078-A3207-A2
E3Sb05
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PDF
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b0245a
Abstract: b0607 PH3055T FT3055 SOLITRON B0501A MJE280H MJE2801K MJE3055K
Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 >= 30 2N5877 SOT7732 SOT7732 SOT7732 SOT7742 SOT7742 SOT7742 SOT7762 ~g:gg~~ 35 40 SOT7012 SOT7475 2N2811 OTL8012 SOT3226 SOT3226 SOT3226 SOT85307 SD+;5~01 45 50 55 60 65 70 SOT85507 SOT85607 SOT85607
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B0207
BOW21A
B0501A
OT7618
FT3055
SSP66A
2N6098
2N6099
b0245a
b0607
PH3055T
SOLITRON
MJE280H
MJE2801K
MJE3055K
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 347 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 347 50 V h 45 A ^bs on Package Ordering Code 0.03 n TO-218AA C67078-S31 15-A2 Maximum Ratings Parameter Symbol Continuous drain current
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OCR Scan
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O-218AA
C67078-S31
15-A2
fl23SbOS
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PDF
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Untitled
Abstract: No abstract text available
Text: BUZ 344 I nf ineon technologie» SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type ^DS to flDS on Package Ordering Code BUZ 344 100 V 50 A 0.035 n TO-218AA C67078-S3132-A2 Maximum Ratings Parameter Symbol Continuous drain current
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OCR Scan
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O-218AA
C67078-S3132-A2
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
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PDF
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TO-218AA Package
Abstract: C67078-A5100-A3
Text: TEMPFET BTS 240A Features ● ● ● ● N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 Pin 1 2 3 G D S 2 Type VDS ID RDS on Package Ordering Code BTS 240A 50 V 58 A 0.018 Ω
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O-218AA
C67078-A5100-A3
O-218
C67078-S5100-A3
TO-218AA Package
C67078-A5100-A3
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 330 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 330 Vbs 500 V hi 9.5 A % S on Package Ordering Code 0.6 n TO-218AA C67078-S3105-A2 Maximum Ratings Parameter Symbol Continuous drain current Values
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OCR Scan
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O-218AA
C67078-S3105-A2
O-218AA
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PDF
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leistungstransistoren
Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
Text: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m
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OCR Scan
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O-220
BUZ12A
BUZ11S2
BUZ10S2
O-218
346S2
BUP410D
leistungstransistoren
bup314d
buz 342 G
siemens 230 95 O
BUP 307D
BUZ,350
BUZ,271
BUP400D
bup313d
BUP314
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PDF
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transistor buz 350
Abstract: d 1047 transistor
Text: SIEMENS BUZ 350 SIPMOS Power Transistor O • N channel • Enhancement mode ' • Avalanche-rated V ’ iOb'SS fé 3 P in i Pin 2 G Type Vbs BUZ 350 200 V b 22 A f h S on 0.12 w Pin 3 D S Package Ordering Code TO-218 AA C67078-S3117-A2 Maximum Ratings
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OCR Scan
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O-218
C67078-S3117-A2
O-218AA
transistor buz 350
d 1047 transistor
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PDF
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buz358
Abstract: No abstract text available
Text: SIEMENS BUZ 358 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 358 1000 V flbston 2.6 w 4.5 A Package Ordering Code TO-218 AA C67078-S3111-A2 Maximum Ratings Parameter Symbol Continuous drain current b 7b = 25 °C
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OCR Scan
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O-218
C67078-S3111-A2
O-218AA
buz358
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PDF
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transistor D 2499
Abstract: transistor K D 2499 BUZ 82 BUZ345 transistor 2499
Text: SIEMENS BUZ 345 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 345 Vbs 100 V b 41 A flfasion 0.045 n Package Ordering Code TO-218AA C67078-S3121-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values
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OCR Scan
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O-218AA
C67078-S3121-A2
O-218AA
transistor D 2499
transistor K D 2499
BUZ 82
BUZ345
transistor 2499
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PDF
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diode ft 344
Abstract: BS 240 siemens transistor buz 210
Text: SIEMENS BUZ 344 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 344 Vds 100 V b 50 A flbs<on 0.035 ß Package Ordering Code TO-218 AA C67078-S3132-A2 Maximum Ratings Parameter Symbol Continuous drain current Values
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OCR Scan
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O-218
C67078-S3132-A2
O-218AA
diode ft 344
BS 240 siemens
transistor buz 210
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PDF
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BUZ 323
Abstract: No abstract text available
Text: SIEMENS BUZ 323 SIPMOS Power Transistor • N channel • Enhancement mode V'ObSB 1 • Avalanche-rated i Pin 1 Pin 2 G Type BUZ 323 Vbs 400 V b 15 A Pin 3 D S fbsion Package Ordering Code 0.3 n TO-218AA C67078-S3127-A2 Maximum Ratings Parameter Symbol
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OCR Scan
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O-218AA
C67078-S3127-A2
BUZ 323
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PDF
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D 346 transistor
Abstract: No abstract text available
Text: SIEMENS BUZ 346 S2 Not far new design SJPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 346 S2 Vbs 60 V b 58 A flbaon 0.018 n Package Ordering Code TO-218AA C67078-S3120-A4 Maximum Ratings Parameter Symbol Continuous drain current
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OCR Scan
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O-218AA
C67078-S3120-A4
O-218
D 346 transistor
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PDF
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siemens igbt BSM 25GD 100D
Abstract: siemens igbt BSM 25gd bsm25gd100d BSS 97 bts412a BSM15GD100D BTS 131 SIEMENS Bts 629 BSS145 siemens igbt BSM 25 gb 100 d
Text: Typenübersicht/Selection Guide SIPMOS Power MOS Transistors Families of Types Type ^DS(max) ^D S(on)m ax ^D{max] V Q A Ptoi Package Page W N channel enhancement types £ 0 BUZ 10 EÜL BUZ 10 L 50 0.07 0.07 23 23 75 75 TO-220AB TO-220AB 690 700 £ □ BUZ 11
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OCR Scan
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O-220AB
O-220
2x100
2x150
100GAL
siemens igbt BSM 25GD 100D
siemens igbt BSM 25gd
bsm25gd100d
BSS 97
bts412a
BSM15GD100D
BTS 131 SIEMENS
Bts 629
BSS145
siemens igbt BSM 25 gb 100 d
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PDF
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BUV-481
Abstract: BUV481 2n6571 BUS14 KSG31203 2SC2761 sanken str 450 bur21 ksg3
Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 970 Manufacturer Ie Max (A) V(BR)CEO (V) fT hFE Min Max (Hz) leBO Max (A) tr Max tf Max (8) (8) 500n 500n .70u .70u .70u 1.0u 1.0u 1.0u 2.0 1.0u 1.0u .80u
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Original
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BUR24
BUS14
BUV481
Oisc-42
OT-93
O-247var
BUV-481
BUV481
2n6571
KSG31203
2SC2761
sanken str 450
bur21
ksg3
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PDF
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TC40U250
Abstract: GENTRON ES BT082 GENTRON BT081 2SC1442 entron
Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 SDT79823 SDT79823 SCA14026 SCA14027 2N6060 2N6062 2N6274 2N6278 ~~~~5~ 25 30 SCA14024 SCA14025 2N6032 2N6275 2N6279 BUT90 BUT90 BUT90 ~~~~g 35 40 BUV60 BUW50 (A) BUV20 BUX20 2N6276 2N6280 SML55405 PT7508
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Original
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SML96303
TC40U250
BUR20
2N5685
PT5501
SCA14028
SCA14029
2N5686
GENTRON ES
BT082
GENTRON
BT081
2SC1442
entron
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PDF
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