ss92
Abstract: marking "BSs" SS-92 Q62702-S497 Q62702-S502 Q62702-S633 marking BSs
Text: BSS 92 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS th = -0.8.-2.0 V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 92 -240 V -0.15 A 20 Ω TO-92 SS92 Type BSS 92 BSS 92 BSS 92 Ordering Code
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Q62702-S497
Q62702-S633
Q62702-S502
E6288
E6296
E6325
ss92
marking "BSs"
SS-92
Q62702-S497
Q62702-S502
Q62702-S633
marking BSs
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ss92
Abstract: SS-92 Q62702-S497 Q62702-S502 Q62702-S633 marking BSs
Text: BSS 92 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS th = -0.8.-2.0 V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 92 -240 V -0.15 A 20 Ω TO-92 SS92 Type BSS 92 BSS 92 BSS 92 Ordering Code
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Q62702-S497
Q62702-S633
Q62702-S502
E6288
E6296
E6325
ss92
SS-92
Q62702-S497
Q62702-S502
Q62702-S633
marking BSs
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors SS9018 TO-92 TRANSISTOR NPN 1.EMITTER FEA TURES High Current Gain Bandwidth Product 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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SS9018
400MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors SS9018 TO-92 TRANSISTOR NPN 1.EMITTER FEA TURES High Current Gain Bandwidth Product 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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SS9018
400MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 SS8550 Plastic-Encapsulate Transistors TRANSISTOR PNP TO-92 FEATURES Power dissipation PC : 1 W (TA=25℃) 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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SS8550
-100mA
-800mA
-800mA,
-80mA
-10mA
-50mA
-30MHZ
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 SS8550 Plastic-Encapsulate Transistors TRANSISTOR PNP TO-92 FEATURES Power dissipation PC : 1 W (TA=25.) 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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SS8550
-100mA
-800mA
-800mA,
-80mA
-10mA
-50mA
-30MHZ
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ss8550
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 SS8550 Plastic-Encapsulate Transistors TRANSISTOR PNP TO-92 FEATURES Power dissipation PC : 1 W (TA=25℃) 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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SS8550
ss8550
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 SS8550 Plastic-Encapsulate Transistors TRANSISTOR PNP TO-92 FEATURES Power dissipation PC : 1 W (TA=25℃) 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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SS8550
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18W SOT23
Abstract: marking 18w sot23
Text: N-Channel JFET Switch LLC 2N4391 – 2N4393 / PN4391 – PN4393 / SST4391 – SST4393 FEATURES • rds on <300 Ohms (2N4391) • ID(OFF)<100pA • Switches ±10VAC With ±15V Supplies (4392, 4393) PIN CONFIGURATION TO - 92 TO-92 TO-18 ABSOLUTE MAXIMUM RATINGS
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2N4391
2N4393
PN4391
PN4393
SST4391
SST4393
2N4391)
100pA
10VAC
-65oC
18W SOT23
marking 18w sot23
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Untitled
Abstract: No abstract text available
Text: Pro Electron Series Discrete POWER & Signal Technologies National Semiconductor BVgss Device No. Case Style BF244A BF244B BF244C BF245A TO-92 TO-92 TO-92 TO-92 30 30 30 30 1 1 1 BF245B BF245C B F 256A BF256B TO-92 TO-92 TO-92 TO-92 2-80 BF256C TO-92 BSR56 TO-236
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OCR Scan
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BF244A
BF244B
BF244C
BF245A
BF245B
BF245C
BF256B
BF256C
BSR56
O-236
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Untitled
Abstract: No abstract text available
Text: calodic o Current Regulator Diode CORPORATION CA500 Series/SST500 Series FEATURES ORDERING INFORMATION • • • • • Part No. Package Part No. Package CA500 CA501 CA502 CA503 CA504 CA505 CA506 CA507 CA508 CA509 CA510 CA511 TO-92 TO-92 TO-92 TO-92 TO-92
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CA500
Series/SST500
CA500
CA501
CA502
CA503
CA504
CA505
CA506
CA507
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CA500
Abstract: ca507 SOT-23 diode marking 0C "current regulator diode" sot23 current regulator diode Current Regulator Diode SST500 marking zd sot23 CA502 CA503
Text: CoIoÖIC Current Regulator Diode CORPORATION \ J CA500 Series/SST500 Series FEATURES ORDERING INFORMATION • • • • • Part No. Package Part No. Package CA500 CA501 CA502 CA503 CA504 CA505 CA506 CA507 CA508 CA509 CA510 CA511 TO-92 TO-92 TO-92 TO-92
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CA500
Series/SST500
OT-23.
operate08
443Z2
0D00TMÃ
ca507
SOT-23 diode marking 0C
"current regulator diode"
sot23 current regulator diode
Current Regulator Diode
SST500
marking zd sot23
CA502
CA503
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2M5457
Abstract: SOT-23 Rod MOSFET P channel SOT-23 N JFET
Text: Discretes continued Low Leakage Diodes JFET Amplifier Applications High G ain P/N P/N Id s s •g s s m A (m in ) pA(m a x) gis m S (m in ) N 3.0 3.5 4.0 4.0 6.0 20 20 20 5 5 5 20 20 5 TO-92 TO-92 TO-92 TO-92 TO-92 N N N N N N P P 5 5 10 20 20 5 TO-92 TO-92
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2N4416/A
2N5484
2N5485
2N5486
PN4416
SST271
2M5457
2N5458
2N5459
DPAD10
SOT-23 Rod
MOSFET P channel SOT-23
N JFET
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National 2N3819
Abstract: 2N5248
Text: Discrete POWER & Signal Technologies National Semiconductorm N-Channel JFETs RF, VHF, UHF Amplifiers B V GSS Device No. C ase Style 2N3819 2N5245 2N5246 2N5247 2N5248 TO-92 TO-92 TO-92 TO-92 TO-92 25 30 30 30 30 1 1 1 1 1 2N5484 2N548S 2N5486 2N5949 2N5950
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pf5101
Abstract: PF5301
Text: JFETs & Discrete POWER & Signal Technologies N a t i on a I Semiconductor N-Channel JFETs Low Frequency - Low Noise Amplifiers Device No. PF5101 PF5102 PF5103 PN4393 Case Style TO-92 TO-92 TO-92 TO-92 NF GS ofl b v gss DSS (V) @ V,DS ( V ) @ lG (nA)@ VTO
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PF5101
PF5102
PF5103
PN4393
PN4117
PN4117A
PN4118
PN4118A
PN4119
PN4119A
PF5301
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TO92-EBC
Abstract: mpsd54
Text: ROHM CO LTD llD E D VflEâ'm D0032Ô3 7 IRHM transistors 7 = 3 /-/T T-27-29 Medium Power Amplifiers Type RN5815 RN5817 RN5819 Package Fig-1 TO-92 (EBC) TO-92 (EBC) TO-92 (EBC) BVcbo BVceo BVebo Min, Min. Min. . 50V 50V 50V MPS4354 TO-92 (EBC) 60V MPS4355
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D0032
RN5815
RN5817
RN5819
100nA
100nA'
500mA
TO92-EBC
mpsd54
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BF245A
Abstract: BF256 BF244A BF244B BF244C BF245B BF245C BF256A BF256B BF256C
Text: si°i- s o q Pro Electron Series . D iscrete POWER & Signal Technologies National Sem iconductor~ _ ^ JFET Pro Electron Series HP 'd nA *DSS ^GS BF244A BF244B BF244C BF245A TO-92 TO-92 TO-92 TO-92 30 30 30 30 1 1 1 1 5 5 5 5 20 20 20 20 0.5 0.5 0.5
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BF244A
BF244B
BF244C
BF245A
J18-4
BF256
BF245B
BF245C
BF256A
BF256B
BF256C
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high voltage npn to-92
Abstract: MPSA25 2N5415 2N3439 2N5400 2N5401 2N5550 2N5551 MPSA42 MPSA43
Text: N AMER PHIL IP S/DIS CR ETE 16 SSE D • bbSSÌSl GOlblTM 1 ■ *>>e min @ *c . mA ‘f - X l - O i Small Signal Devices HIGH VOLTAGE TRANSISTORS TYPE PKG bvCEQ *6 r 1 vCE(sat) @ max I m I % 1 ' . (mA) ; . min .-.ì (MHz) m (mA) TO-39 TO-39 TO-92 TO-92 TO-92
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2N3439
2N344Q
2N5550
2N5551
MPSA42
MPSA43
PN3439
PN3440
2N5400
2N5401
high voltage npn to-92
MPSA25
2N5415
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2SB1615
Abstract: 2SC4929 2SC4971 2SD2504 2SA879 2SB873 2sb161 2sc2188 2SB1537 2SB1538
Text: 118 • Package No. b^32fiS2 Applica tion Functions SS Mini Type (0 1 ) S Mini Type (05) Mini Type (010) T Mini Type New S Type (D39) (01 9 ) TO-92 (D49) M Type (D40) TO-92 NL (0 5 1 ) TO-92 L (D50) Mini Power Type (016) VcEO MT1 Type (04 2 ) MT2 Type
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A2SB1610
A2SD2472
2SB1537
2SD2357
2SB1538
12SD2358
A2SB1619
A2SD2483
A2SB1611
IA2SD2473
2SB1615
2SC4929
2SC4971
2SD2504
2SA879
2SB873
2sb161
2sc2188
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TIS98
Abstract: No abstract text available
Text: E^hOhOO OETTDiï^ I NPN General Purpose Amplifiers and Switches Device No. PN100 9TT PN100A Case Style TO-92 92 TO-92 (92) V CBO V CEO v EBO (V) Min (V) Min (V) Min 75 45 6 75 45 6 (continued) ICES * ^CBO (nA) Max 50 50 V @ hFE (V) Min 60 80 100 100 100
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PN100
TIS98
2N4410
2N5551
2N5830
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05 S-8 SOT-89
Abstract: No abstract text available
Text: V ¡N V Po max. (w) NJM78L02A/UA TO-92/SOT-89 2.6 ±5 0.1 4.75 —30 0.5 /0 .3 5 NJM78L05A/UA TO-92/SOT-89 5 ±5 0.1 7 -3 0 0.5 /0 .3 5 NJM78L06A/UA TO-92/SOT-89 6 ±5 0.1 8 .5 - 3 0 0.5 /0 .3 5 NJM78L08A/UA TO-92/SOT-89 8 ±5 0.1 1 0 .5 -3 0 0.5 /0 .3 5
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NJM78L02A/UA
O-92/SOT-89
NJM78L05A/UA
NJM78L06A/UA
NJM78L08A/UA
NJM78L09A/UA
O92/S0T-89
05 S-8 SOT-89
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Untitled
Abstract: No abstract text available
Text: Pro Electron Series /% JkJ » \ / w Sem iconductor'" V D e v ice C ase No. S ty le BC327 BC327A BC327-16 BC327-25 2-66 BC328 BC328-25 BC337 BC337A BC337-16 BC337-25 BC338 BC368 D iscrete POWER & Signal Technologies National TO-92 97 TO-92 (97) TO-92 (97)
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OCR Scan
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PDF
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BC327
BC327A
BC327-16
BC327-25
BC328
BC328-25
BC337
BC337A
BC337-16
BC337-25
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8
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PDF
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615NV
BSP318S
BUZ MOSFET
mosfet BUZ 326
BUZ MOSFET 334
spd14n05
mosfet BUZ 349
mosfet buz 90a
BUZ 100 MOSFET
bup202
BUZ MOSFET 102s
BUZ MOSFET 111S
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VN10KM
Abstract: VN0610L
Text: VN0610L, VN10KE, VN10KM m SSffA N-Channel Enhancement-Mode MOS Transistors, Zener Gate Protected_ PRODUCT SUMMARY TO-92 TO-226AA PART NUMBER V (BR)DSS (V) *DS(ON) ( il) (A) PACKAGE VN0610L 60 5 0.27 TO-92 VN10KE 60 5 0.17 TO-52 VN10KM 60 5 0.31 TO-237
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OCR Scan
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VN0610L,
VN10KE,
VN10KM
VN0610L
VN10KE
VN10KM
O-226AA)
O-237
VNDS06
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