TK20 Search Results

Contextual Info: TK20S06K3L MOSFETs Silicon N-channel MOS U-MOS  TK20S06K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.) (VGS = 10 V) (2)

toshiba K20J50D

Abstract: K20J50D TK20J50D k20j50 SC-65 VDD400
Contextual Info: TK20J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK20J50D Switching Regulator Applications 20.5 ± 0.5 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) 1.0 ＋0.3 －0.25 Symbol Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage

TK20X60U

Contextual Info: TK20X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK20X60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)

Contextual Info: TK20G60W MOSFET シリコンNチャネルMOS形 DTMOS TK20G60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.13 Ω (標準) (2)

K20J60T

Abstract: k20j60 TK20J60T SC-65
Contextual Info: TK20J60T 東芝電界効果トランジスタ シリコンNチャネルMOS形 DTMOS TK20J60T ○ スイッチングレギュレータ用 単位: mm 漏れ電流が低い。 : IDSS = 100 A (最大) (VDS = 600V) 取り扱いが簡単な､エンハンスメントタイプです。

Contextual Info: TK20A60W MOSFET シリコンNチャネルMOS形 DTMOS TK20A60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.13 Ω (標準) (2)

TPS1035

Abstract: RCA Transistor "Audio Power Amplifier" Application Note Tripath Technology 0.1u 50v 2.2uF 10V electrolytic capacitor TRIPATH TK2070 47uf, 25v electrolytic capacitor footprint amidon RESISTOR FOOTPRINT 805
Contextual Info: Tripath Technology, Inc. – Technical Information RB-TK2070 2 X 70W CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD Technical Information- Board Rev. 2.0 Revision 1.1 – APRIL 2004 GENERAL DESCRIPTION The RB-TK2070 Revision 2.0 is a bridged stereo 70W continuous average power per channel audio

TP2051

Abstract: 12v class d amplifier 40W EB-TK2051 TRIPATH Speaker 40W TK2051 AES17 MCP101-450 TC2000 VTK2051
Contextual Info: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TK2051 STEREO 50W 8Ω CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING (DPP™) TECHNOLOGY Technical Information Revision 1.1 – August 2002 GENERAL DESCRIPTION The TK2051 (TC2000/TP2051 chipset) is a 50W continuous average power per

amidon

Abstract: amidon t 200-2 AW600-06-40T-24 500K AUDIO DUAL POT TRIPATH TECHNOLOGY P467 TP2051 ati theater 200 3306P POT AW600-06-40T-24V
Contextual Info: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on RB-TK2051 CLASS-T DIGITAL AUDIO AMPLIFIER 2 CHANNEL TK2051 EVALUATION BOARD Technical Information- Board Rev. 1.4 Revision 1.0 – April 2002 GENERAL DESCRIPTION The RB-TK2051 Revision 1.4 is a stereo 50W per channel audio amplifier designed to provide a simple and

Contextual Info: TK20S06K3L MOSFETs Silicon N-channel MOS U-MOS TK20S06K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.) (VGS = 10 V) (2)

Contextual Info: TK20E60U MOSFETs Silicon N-Channel MOS DTMOS TK20E60U 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.165 Ω (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)

TK20D60T

Abstract: K20D60T
Contextual Info: TK20D60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS TK20D60T Switching Regulator Applications Unit: mm 10.0±0.3 Low drain-source ON resistance: RDS (ON) = 0.165Ω (typ.) High forward transfer admittance: Low leakage current: IDSS = 100 A (VDS = 600 V)

K20J50D

Abstract: toshiba K20J50D
Contextual Info: TK20J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK20J50D Switching Regulator Applications Unit: mm 20.5 ± 0.5 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) 1.0 ＋0.3 －0.25 Drain-source voltage VDSS 500 V Gate-source voltage

K20A60U

Abstract: TK20A60U VDD400 k20a
Contextual Info: TK20A60U 東芝電界効果トランジスタ シリコンNチャネルMOS形 DTMOSⅡ TK20A60U ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.165Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 12 S (標準)

Contextual Info: TK20C60W MOSFETs Silicon N-Channel MOS DTMOS TK20C60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

Contextual Info: TK20A20D MOSFETs Silicon N-Channel MOS π-MOS TK20A20D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.07 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

Contextual Info: TK20S04K3L MOSFETs Silicon N-channel MOS U-MOS  TK20S04K3L 1. Applications • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 11 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)

TK20H50C

Contextual Info: TK20H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI TK20H50C Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0. 23Ω (typ.) z High forward transfer admittance : |Yfs| = 14 S (typ.) : IDSS = 100 µA (max) (VDS = 500 V)

Contextual Info: TK20N60W MOSFETs Silicon N-Channel MOS DTMOS TK20N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

K20J60U

Abstract: k20j60 TK20J60U power Diode 200V 10A SC-65
Contextual Info: TK20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK20J60U Switching Regulator Applications Unit: mm VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V (Note 1) ID 20 Pulse (t = 1 ms) (Note 1) IDP 40 A 1 Drain power dissipation (Tc = 25°C)

Contextual Info: TK20J60W MOSFET シリコンNチャネルMOS形 DTMOS TK20J60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.13 Ω (標準) (2)

40W Subwoofer diagram

Abstract: simple subwoofer circuit diagram subwoofer schematic diagram subwoofer low pass band filter diagram 5v subwoofer amplifier subwoofer 2.1 high pass filter schematic diagram simple subwoofer 2.1 high pass filter schematic subwoofer amplifier circuit diagram dual sub woofer circuit diagram low pass subwoofer circuit diagram
Contextual Info: Tr i path Technol ogy, I nc. - Technical Information RB-TK2019 SAT/SUB 2 X 20W PLUS 1 X 70W CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD Technical Information- Board Rev. 1.0 Revision 1.0 – January 2004 GENERAL DESCRIPTION The RB-TK2019 SAT/SUB Revision 1.0 is a stereo single ended 20W plus a mono bridged 70W

TK20D60T

Abstract: K20D60T
Contextual Info: TK20D60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS TK20D60T Switching Regulator Applications Unit: mm 10.0±0.3 Low drain-source ON resistance: RDS (ON) = 0.165Ω (typ.) High forward transfer admittance: ⎪Yfs⎪=12 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)

K20J60T

Abstract: TK20J60T k20j60 SC-65
Contextual Info: TK20J60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS TK20J60T Switching Regulator Applications Unit: mm 20.0±0.3 9.0 2.0 3.3max. 1.0 2.0 Low drain-source ON resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)