TK20D60T
Abstract: K20D60T
Text: K20D60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS K20D60T Switching Regulator Applications Unit: mm 10.0±0.3 Low drain-source ON resistance: RDS (ON) = 0.165Ω (typ.) High forward transfer admittance: Low leakage current: IDSS = 100 A (VDS = 600 V)
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TK20D60T
TK20D60T
K20D60T
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TK20D60T
Abstract: K20D60T
Text: K20D60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS K20D60T Switching Regulator Applications Unit: mm 10.0±0.3 Low drain-source ON resistance: RDS (ON) = 0.165Ω (typ.) High forward transfer admittance: ⎪Yfs⎪=12 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)
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TK20D60T
TK20D60T
K20D60T
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TK20D60T
Abstract: K20D60T MJ 1503
Text: K20D60T 東芝電界効果トランジスタ シリコンNチャネルMOS形 DTMOS K20D60T ○ スイッチングレギュレータ用 単位: mm 10.0±0.3 z オン抵抗が低い。 : RDS (ON) = 0.165Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 12 S (標準)
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TK20D60T
20070701-JA
TK20D60T
K20D60T
MJ 1503
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