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    K20J50 Price and Stock

    Toshiba America Electronic Components TK20J50D(F)

    Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-3PN - Bulk (Alt: TK20J50D(F))
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    Avnet Americas TK20J50D(F) Bulk 16 Weeks 50
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    Mouser Electronics TK20J50D(F) 3,308
    • 1 $3.08
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    Avnet Asia TK20J50D(F) 24 Weeks 200
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    EBV Elektronik TK20J50D(F) 19 Weeks 50
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    Toshiba America Electronic Components TK20J50D

    Nch, PD=280W, VDSS=500V, VGSS=?30V, ID=20A, Qg=45nC(typ.), Ciss=2600pF(typ.), RDS(ON)=0.27(max)@VGS=10V - Rail/Tube (Alt: TK20J50D)
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    Avnet Americas TK20J50D Tube 12 Weeks 50
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    Toshiba America Electronic Components TK20J50D(STA1,E,S)

    Trans MOSFET N-CH 500V 20A 3-Pin SC-65 (Alt: TK20J50D(STA1,E,S))
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    Avnet Asia TK20J50D(STA1,E,S) 24 Weeks 200
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    K20J50 Datasheets Context Search

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    toshiba K20J50D

    Abstract: K20J50D TK20J50D k20j50 SC-65 VDD400
    Contextual Info: K20J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K20J50D Switching Regulator Applications 20.5 ± 0.5 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) 1.0 ＋0.3 －0.25 Symbol Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage


    Original     		TK20J50D toshiba K20J50D K20J50D TK20J50D k20j50 SC-65 VDD400 PDF

    K20J50D

    Abstract: toshiba K20J50D
    Contextual Info: K20J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K20J50D Switching Regulator Applications Unit: mm 20.5 ± 0.5 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) 1.0 ＋0.3 －0.25 Drain-source voltage VDSS 500 V Gate-source voltage


    Original     		TK20J50D K20J50D toshiba K20J50D PDF

    toshiba K20J50D

    Abstract: k20j50 K20J50D TK20J50D
    Contextual Info: K20J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K20J50D Switching Regulator Applications Unit: mm 20.5 ± 0.5 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) 1.0 ＋0.3 －0.25 Drain-source voltage VDSS 500 V Gate-source voltage


    Original     		TK20J50D toshiba K20J50D k20j50 K20J50D TK20J50D PDF

    toshiba K20J50D

    Contextual Info: K20J50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K20J50D 単位: mm スイッチングレギュレータ用 1.0 2.0 4.5 Ф3.2±0.2 15.9max. : |Yfs| = 8.5 S (標準) (VDS = 500 V) 2.0 取り扱いが簡単なエンハンスメントタイプです。


    Original     		TK20J50D toshiba K20J50D PDF

    toshiba K20J50D

    Abstract: K20J50D TK20J50D k20j50 SC-65
    Contextual Info: K20J50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K20J50D スイッチングレギュレータ用 単位: mm 1.0 2.0 (VDS = 500 V) : Vth = 2.0～4.0 V (VDS = 10 V, ID = 1 mA) 2.0 3.3max. 取り扱いが簡単なエンハンスメントタイプです。


    Original     		TK20J50D toshiba K20J50D K20J50D TK20J50D k20j50 SC-65 PDF

    K20J50D

    Contextual Info: K20J50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII K20J50D Switching Regulator Applications Unit: mm 20.5 ± 0.5 2.0 ± 0.3 Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 V ID 20 DC (Note 1) Drain current IDP 80


    Original     		TK20J50D K20J50D PDF