TIP30CF Search Results

I8212

Contextual Info: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL 5 bE D I 7 1 1 DflEb [IDM3 4 bb 7 G 0 « P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications.

30BF

Abstract: TIP30DF TIP3 TIP29AF TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF
Contextual Info: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL Sb E D I 7110ä2b 00M34bb 700 « P H I N SILICON EPITAXIAL POWER TRANSISTORS T - & - IT PNP silicon power transistor in a S O T 186 envelope w ith an electrically insulated mounting base, for use in audio output stages and for general purpose am plifier and high-speed switching applications.

Contextual Info: TIP30CF Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)140 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)14 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u° @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).70 @I(C) (A) (Test Condition)1.0

Contextual Info: TIP30F TIP30AF; TIP30BF T1P30CF; TIP30DF J SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, fo r use in audio output stages and for general purpose amplifier and high-speed switching applications.

Contextual Info: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages, general purpose amplifier and high-speed switching applications.

TIP290

Abstract: TIP29CF TIP30CF TIP29AF TIP29BF TIP29DF TIP29F TIP30AF TIP30BF TIP30DF
Contextual Info: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope w ith an electrically insulated mounting base, intended fo r use in audio o u tp u t stages, general purpose am plifier and high-speed switching applications.

TIP29F

Abstract: TIP30CF TIP29AF TIP29BF TIP29CF TIP29DF TIP30AF TIP30BF TIP30DF TIP30F
Contextual Info: TIP29F TIP29AF; TIP29BF TIP29CF; TIP29DF PHILIPS INTERNATIONAL SbE D • 7110flSb 0043452 SILICON EPITAXIAL POWER TRANSISTORS lib ■ P H I N ' 7 -3 3 -0 7 NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base, intended for use in audio output stages, general purpose amplifier and high-speed switching applications.

30df

Abstract: AI mm sot 553 TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF TIP30CF TIP30DF
Contextual Info: TIP30F TIP30AF; TIP30BF ^ T1P30CF; TIP30DF SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a S O T 1 8 6 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications.