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    TIP29BF Search Results

    TIP29BF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TIP29BF Philips Semiconductors Silicon Epitaxial Power Transistor Original PDF

    TIP29BF Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TIP29BF Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)14 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u° @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).70 @I(C) (A) (Test Condition)1.0


    Original     		PDF TIP29BF

    Untitled

    Abstract: No abstract text available
    Text: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages, general purpose amplifier and high-speed switching applications.


    OCR Scan     		PDF T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF OT186 TIP30F, TIP30AF, TIP30BF, TIP30CF

    TIP290

    Abstract: TIP29CF TIP30CF TIP29AF TIP29BF TIP29DF TIP29F TIP30AF TIP30BF TIP30DF
    Text: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope w ith an electrically insulated mounting base, intended fo r use in audio o u tp u t stages, general purpose am plifier and high-speed switching applications.


    OCR Scan     		PDF T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF OT186 TIP30F, TIP30AF, TIP30BF, TIP30CF TIP290 TIP29CF TIP29AF TIP29BF TIP29DF TIP29F TIP30AF TIP30BF TIP30DF

    TIP29F

    Abstract: TIP30CF TIP29AF TIP29BF TIP29CF TIP29DF TIP30AF TIP30BF TIP30DF TIP30F
    Text: TIP29F TIP29AF; TIP29BF TIP29CF; TIP29DF PHILIPS INTERNATIONAL SbE D • 7110flSb 0043452 SILICON EPITAXIAL POWER TRANSISTORS lib ■ P H I N ' 7 -3 3 -0 7 NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base, intended for use in audio output stages, general purpose amplifier and high-speed switching applications.


    OCR Scan     		PDF TIP29F TIP29AF; TIP29BF TIP29CF; TIP29DF 7110flSb OT186 TIP30F, TIP30AF, TIP30BF, TIP29F TIP30CF TIP29AF TIP29BF TIP29CF TIP29DF TIP30AF TIP30BF TIP30DF TIP30F

    Untitled

    Abstract: No abstract text available
    Text: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF PHILIPS INTERNATIONAL SbE D • 711002b 0043452 lib ■ P H I N ' SILICO N EPITAXIAL POW ER TR A NSISTO R S T-33-07 NPN silicon power transistors in a S O T 186 envelope w ith an electrically insulated mounting base,


    OCR Scan     		PDF T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF 711002b T-33-07 TIP29F

    I8212

    Abstract: No abstract text available
    Text: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL 5 bE D I 7 1 1 DflEb [IDM3 4 bb 7 G 0 « P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications.


    OCR Scan     		PDF TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF OT186 TIP29F, TIP29AF, TIP29BF, TIP29CF I8212

    Untitled

    Abstract: No abstract text available
    Text: TIP30F TIP30AF; TIP30BF T1P30CF; TIP30DF J SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, fo r use in audio output stages and for general purpose amplifier and high-speed switching applications.


    OCR Scan     		PDF TIP30F TIP30AF; TIP30BF T1P30CF; TIP30DF OT186 TIP29F, TIP29AF, TIP29BF, TIP29CF