TIC 236 TRANSISTOR Search Results

N6055

Abstract: RCA-2N6055 SUS CIRCUIT 2N6055 2N6056 darlington npn rca TYPES OF TRANSISTORS TEKTRONIX TRANSISTORS
Contextual Info: 3875081 G E SOLID STATE~Öl Dlf| 3375001 0017534 7 ^ $ 3Darlington Power ? _ 2N6055, 2N6056 File Number 8-Ampere Silicon N-P-N Darlington Power Transistors 60- and 80-Volt, 100-Watt Types

m2n7000

Abstract: 1000J sot23 BS170
Contextual Info: Tem ic 2N7000/7002, VQIOOOJ/P, BS170_ slUconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V B R D S S Min (V) * * D S (o n ) Max (Q) I d (A) Vr.s(ih) (V) 2N7000 5 @ V gs = 10V 0.8 to 3 0.2 2N7002 7.5 @ V gs = 10 V 1 to 2.5

65e7

Abstract: BCY65 BCY 59 bcy58 59VIII BCY58-VIII BCY59 Q60203-Y58-G BCY 65 Q60203-Y59-J
Contextual Info: BCY 58, BCY 59, BCY 65 E ~ 2 N 2483 NPN Transistors fo r AF prestages, driver stages and switching applications BCY 58, BCY 59 and BCY 65 E are silicon planar NPN epitaxial transistors in a case 18 A 3 DIN 41 876 (TO -18). The collector is electrically connected to the case.

transistor BC 236

Contextual Info: MPSH81 //W U Eq U TO MMBTH81 -236 23 TO S O T - -92 T L /G /10100-5 Bc T L /G /1 0 1 0 0 -1 PNP RF Transistor Electrical Characteristics Symbol ta = 25°c unless otherwise noted Parameter Min Max Units OFF CHARACTERISTICS v (BR)CEO V (B R )C BO V (B R )E B O

transistor Bs 998

Contextual Info: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 F e a tu re s • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 5:1 Type B F 998 M arking MO O rd ering C o d e tape and reel 1 Q 6 2 7 0 2 -F 1 129

F587

Abstract: TI 740
Contextual Info: SSC D • ß 2 3 S b G 5 ÜQOMbTB 3 H S I E 6 . NPN Silicon RF Transistors BFS 18 BFS 18 R SIEMENS AKTIENGESELLSCHAF 0 ~ T ^ 3 I- '0 -BFS 19 BFS 19 R BFS 18 and BFS 19 are epitaxial NPN silicon planar transistors in TO 236 plastic package 23 A 3 DIN 41869 . These transistors were especially designed fo r use in RF circuits

TA2765

Abstract: 2N5240
Contextual Info: File Number 321 2N5239, 2N5240 High-Voltage, Silicon N-P-N Transistors For H ig h-S p eed S w itching and Linear-A m plifier A pplications in Industrial and C om m erical Service Features: • H ig h volta ge ra tin g s : 1 / c e r [ s u s ] = 3 5 0 V, A be < 50 O 2N5240

BC327

Abstract: cbc328 BC328 BC 327 bc 327 complementary pair c 337 25 BC3280 pF83
Contextual Info: BC 327 • BC 328 Silii’ium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: Treiber und Endstufen A p p lic a tio n s : Driver and p o w e r stages Besondere Merkmale: Features: • Verlustleistung 625 mW • Power dissipation 625 m W

321A15

Abstract: k0321 powerex kd kd32
Contextual Info: POWEREX INC m TöD m D THTHbHl O Q O a m 3 o KD321A1S ta Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Tentative Fast Switching Dual Darlington Transistor Module 150 Amperes/125 Volts Description Q U U tIC M A ftlK « T • «TH Q — ^

2SA1495

Contextual Info: Power Transistors 2SA1495 2 S A 1495 Silicon P N P Epitaxial Planar Type P a c k a g e D im e n s io n s H igh S p ee d S w itc h in g Unit I mm • F e a tu re s • High DC cu rren t gain • High speed switching Iif e • High collector-base voltage

BC160

Abstract: bc 160 BC161 TFK BC TFK 175 TFK 236 bc 141
Contextual Info: ip ^ B C 160- BC 161 Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: NF-Verstärker und Schalter Applications: AF am plifiers and switches Besondere Merkmale: Features: • Verlustleistung 3,2 W • Power dissipation 3.2 W

Contextual Info: 7294621 m POWEREX u a m INC “ DEI 7514^51 DD0SD3b x Powerex, Inc., Hlllls Street, ibungwood, Pennsylvania 15697 412 925-7272 fl D "T ^ S ^ Z y KT234520 Split-Dual Bipolar Transistor Module 200 Amperes/600 Volts Description o u t liv e m m ìn g Powerex Split-Dual Bipolar Transistor

bc1417

Abstract: BC140-BC141 BC 545 bc 141 bc140 tfk 545 bc 140 BC140B BC141 S45C
Contextual Info: Silizium- NPN-Epitaxial-Planar-NF-T ransistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Verstärker und Schalter A p p lic a tio n s : AF am plifiers and sw itches Besondere Merkmale: F eatures: • Verlustleistung 3,7 W • Power dissipation 3,7 W

BF 234 transistor

Abstract: transistor KSC2786 RF POWER TRANSISTOR 100MHz samsung tv
Contextual Info: Inc SAMSUNG SEMICONDUCTOR KSC2786 i*e ° aoofibM q | ~ r - jj~ fy NPN EPITAXIAL SILICON TRANSISTOR a • r TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92S • High Cumnt-CMIn-Bandwidth Product fT=600MHz iyp • High Power Gain Gp«=22dB at f=100MHz

Transistor BFT 99

Abstract: BFT75 Q62702-F513 siemens CIB BFt 66 Transistor BFT 44
Contextual Info: asc D fi23SbOS QGG4713 S mSIZG ; • T -H 'H NPN Silicon RF Broadband Transistor BFT 75 - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 236 plastic package 23 A 3 DIN 41869 , intended for use in low-noise input and intermediate stages in RF

Contextual Info: DATA SHEET NEC / SILICON TRANSISTOR _ / 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S B798 is designed fo r audio frequency pow er a m p lifie r a pp lica tion, especially in H y b rid Integrated C ircuits. FEATURES PACKAGE DIMENSIONS

bdx88b

Contextual Info: 7=12=5237 0 0 2 6 4 7 R H • I •'SVZ-^ SGS-THOMSON BDX87/87A/87B/87C BDX88/88A/88B/88C S G S-THOMSON 3D E D POWER DARLINGTONS DESC RIPTIO N The BDX87, BDX87A, BDX87B and BDX87C are Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are moun­

transistor tt 2222

Abstract: philips resistor 2322-153 TT 2222 BLF177 TRIMMER cap no-2222 809 07015 71005 philips resistor 2322
Contextual Info: Philips Components blr77 _ A _ DEVELOPMENT DATA This data s h e e t co n ta in s advance in fo rm a tio n and sp e c ific a tio n s w h ic h are s u b je c t to change w ith o u t n o tic e . RF POWER MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor intended fo r use in professional transmitters

C 548 B

Abstract: B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548
Contextual Info: asc D • fi 23S hü S Q Q Q m S Q T M S I E G _ T - 2~ 9 ~ Z / NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENGESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and

2SB232

Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

transistor TT 3043

Abstract: tt 3043 al 336 D67FP5 IC TT 3043 d67fp6 aj204 D67FP D67FP7 638ak
Contextual Info: HIGH SPEED NPN POWER DARLINGTON TRANSISTORS D67FP5,6,7 500-700 VOLTS 100 AMP, 312.5 WATTS The D67FP is a high voltage NPN high current power darlington especially designed for use in PWM applications where fast and efficient switching is required. This device

amplificateur

Abstract: vertical tv deflexion BD233 bo236 BD NPN transistors bd 233 bd 237
Contextual Info: NPN SILICON TRANSISTORS, E P IT A X IA L BASE BD 233 TRANSISTORS SILICIUM NPN, BASE EPITAXIEE gg 2 .3 5 BD 237 Compl. o f BD 234, BO 236, BD 238 P R E LIM IN A R Y D A T A NOTICE PRELIMINAIRE These transistors are intended fo r complemen­ ta ry or quasi complementary sym etry amplifiers :

transistor z5t

Abstract: 1S697 KT521K03 300 volt 5 ampere transistor a 31 transistor k 4213 TI-125K 1251C
Contextual Info: 7 2 9 4 6 2 m N 1' P O W ER E X I NC T f l D e | 7 2 ^ 5 1 C O D E 3 7 7 E X _ E R Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 ) 1 | “ T ^ 3 3 ~ 3 5 “ d KT521K03 S p U t - D U d l D a r lin g t O F I Transistor Module

KE724503

Abstract: 748 transistor on LC20A KE7245
Contextual Info: 31E D POWEREX INC m M B Œ • TS^MbEl OOOMMlfl-T M P R X KE7245Ó3 X Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Six-Darlington Transistor Module