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    TF 115 250V 2A Search Results

    TF 115 250V 2A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RQK2501YGDQA#H1 Renesas Electronics Corporation Nch Single Power Mosfet 250V 0.4A 5400Mohm Mpak/Sc-59 Visit Renesas Electronics Corporation
    HAT2089R-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 2A 600Mohm Sop8 Visit Renesas Electronics Corporation
    H5N2508DL-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 7A 630Mohm DPAK(L)-(2)/To-251 Visit Renesas Electronics Corporation
    2SK1761-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 12A 350Mohm To-220Ab Visit Renesas Electronics Corporation
    H5N2505DSTL-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 5A 890Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation

    TF 115 250V 2A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tf 216 10a 250v

    Abstract: DYE*TCO DF184S ISO 8015 tolerance DYE DF84S ISO 8015 tf 115 250v 15a DF240S 250V 10A TF 106 thermoresistor
    Text: RoHS Highly Reliable Safety Device THERMAL LINKS DONG-YANG ELECTRONICS CO., LTD. The ultimate one-shot temperature safety device. Thermal links are designed to provide upper limit temperature protection of all electric and electronic products, keeping the products functioning properly


    Original     		PDF TJ142D TJ152D TJ78D TJ99D tf 216 10a 250v DYE*TCO DF184S ISO 8015 tolerance DYE DF84S ISO 8015 tf 115 250v 15a DF240S 250V 10A TF 106 thermoresistor

    SEFUSE SF240E

    Abstract: SEFUSE SF214E SEFUSE SEFUSE SF129E SEFUSE SF226e SF240E SF119E SEFUSE SF214E sefuse sf 91e SF139Y
    Text: SEFUSE TM THERMAL CUTOFF 8th Edition Cutaway View of SEFUSETM SF Type SF Type SEFUSE TM Contents Introduction . 4 Features . 4


    Original     		PDF EM0060EJ8V1SG00 SEFUSE SF240E SEFUSE SF214E SEFUSE SEFUSE SF129E SEFUSE SF226e SF240E SF119E SEFUSE SF214E sefuse sf 91e SF139Y

    FSL430R

    Abstract: tf 115 250v 2a 4010 IC data sheet MIL-S-19500 2E12 3E12 FSL430D fsl430
    Text: S E M I C O N D U C T O R FSL430D, FSL430R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSL430D, FSL430R 100KRADS 100ghts 1-800-4-HARRIS FSL430R tf 115 250v 2a 4010 IC data sheet MIL-S-19500 2E12 3E12 FSL430D fsl430

    2N6547

    Abstract: No abstract text available
    Text: Product Specification www.jmnic.com 2N6547 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : ・Switching regulators ・PWM inverters and motor controls


    Original     		PDF 2N6547 Collector10A 2N6547

    2N6547

    Abstract: 2N6546 tf 115 250v 2a
    Text: SavantIC Semiconductor Product Specification 2N6546 2N6547 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : ·Switching regulators


    Original     		PDF 2N6546 2N6547 2N6546 2N6547 tf 115 250v 2a

    2N6547

    Abstract: 2N6546
    Text: JMnic Product Specification 2N6546 2N6547 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : ・Switching regulators ・PWM inverters and motor controls


    Original     		PDF 2N6546 2N6547 2N6546 2N6547

    Untitled

    Abstract: No abstract text available
    Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically


    Original     		PDF FSL430D, FSL430R

    2E12

    Abstract: 3E12 FSL430D FSL430D1 FSL430D3 FSL430R FSL430R1 FSL430R3
    Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically


    Original     		PDF FSL430D, FSL430R 2E12 3E12 FSL430D FSL430D1 FSL430D3 FSL430R FSL430R1 FSL430R3

    2N6547

    Abstract: tf 115 250v 15a 2N6546
    Text: Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6546 2N6547 DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : ・Switching regulators


    Original     		PDF 2N6546 2N6547 2N6546 2N6547 tf 115 250v 15a

    2E12

    Abstract: 3E12 FSL430D FSL430D1 FSL430D3 FSL430R FSL430R1 FSL430R3
    Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically


    Original     		PDF FSL430D, FSL430R 2E12 3E12 FSL430D FSL430D1 FSL430D3 FSL430R FSL430R1 FSL430R3

    Untitled

    Abstract: No abstract text available
    Text: , LJne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. M J13333 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min) • High Switching Speed


    Original     		PDF J13333 COLLE00V

    equivalent mje13005

    Abstract: 2N2222 transistor curve 2N2222 SOA 2N2222 transistor output curve
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 O-220F QW-R219-001 equivalent mje13005 2N2222 transistor curve 2N2222 SOA 2N2222 transistor output curve

    equivalent mje13005

    Abstract: 2N2222 transistor output curve transistor mje13005 mje13005 equivalent
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 O-220 QW-R203-018 equivalent mje13005 2N2222 transistor output curve transistor mje13005 mje13005 equivalent

    equivalent mje13005

    Abstract: 1N4933 equivalent
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF MJE13005 O-220 QW-R203-018 equivalent mje13005 1N4933 equivalent

    10016DC

    Abstract: TF PTC
    Text: S T 15950 M I C R O S E ívíI — . C Q R P / P OWE R 02 —- 02E D E |b ll5 ^ 0 0Ö476 _D 0QQDM71n b | • —w t “"T '' « ? ,3 * '2 ^ py q f -|0 0 1 5 PTC 10016 'J P 'T C C T TECHNOLOGY Power Technology Components HIGH VOLTAGE DARLINGTON


    OCR Scan     		PDF 0QQDM71n 10016DC TF PTC

    transistor d333

    Abstract: TRANSISTOR BC 384 mercury wetted relay, double contact DT5336 npn darlington 6A 400V NPN Transistor 10A 400V to3 power darlington 100W Transistor bc 879 high voltage darlington Darlington 300v
    Text: LUCAS STABILITY ELEK 011. UU164 100W A H LTD öl D n D • — SL.07013 -T - 3 3 - 2 ,7 HIGH V O LTA G E DARLINGTON TR A N SIST O R S 300-500V CO LLEC TO R -EM ITTER V O LTA G E □ □ □ □ im DT4335 DT4336 DT5335 DT5336 ■ LUCB The DT4335/6 and DT5335/6 are NPN double epitaxial devices conforming to


    OCR Scan     		PDF uu164 G7G13 00-500V T4335 DT4336 DT5335 DT5336 DT4335/6 DT5335/6 O-3/TO-204. transistor d333 TRANSISTOR BC 384 mercury wetted relay, double contact npn darlington 6A 400V NPN Transistor 10A 400V to3 power darlington 100W Transistor bc 879 high voltage darlington Darlington 300v

    Untitled

    Abstract: No abstract text available
    Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A, 500V, ros ON = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		PDF FSL430D, FSL430R 36MeV/mg/cm2 O-205AF 254mm)

    Untitled

    Abstract: No abstract text available
    Text: 3 FSL430D, FSL430R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs june 1997 Features • Description 2A, 500V, rQS oN) = 2.50Q • Total Dose - Meets Pre-Rad Specifications to 100KRAD(Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    OCR Scan     		PDF FSL430D, FSL430R 100KRADS 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: h a r r is S E M I C O N D U C T O R FSL430D, FSL430R " M W • • Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Description • 2A, 500V, ros ON = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSL430D, FSL430R 100KRADS 1-800-4-HARRIS

    Panasonic ECE-A1H

    Abstract: Panasonic SU ECEA1HU ECEA1VU ECE-A1H ecea2cu
    Text: Panasonic A lu m in u m E lectrolytic Capacitors Radial Leads Type SU Series Radial Leads Type FEATURES • Standard Grade ■ Life : 2000 hours at + 85°C ■ W ide Range of Rated W orking Voltage from 6.3V to 450V ■ Fan Fold Box Packaging for Automatic Insertion


    OCR Scan     		PDF 120Hz. F/35V F/100V Panasonic ECE-A1H Panasonic SU ECEA1HU ECEA1VU ECE-A1H ecea2cu

    GE6062

    Abstract: GE6060 ge6061
    Text: HARRIS SEMICOND SECTOR 27E » • 43QHE,.7]i 0020415 2 « H A S !_ File Number Power Transistors GE6060,GE6061,GE6062 15.85 - " r '3 3 '2 ^ 1 ' 20-Ampere N-P-N Darlington Power Transistors


    OCR Scan     		PDF 43QHE, GE6060 GE6061 GE6062 20-Ampere 204AA GE6060, GE6061, GE6062

    GES060

    Abstract: GE5060 J325 tf 115 250v 15a 100J GE5061 GE5062 ge5062T tf 115 250v 2a
    Text: File Number GE5060, GE5061, GE5062 15.84 20-Am pere N -P -N Darlington Power Transistors TERMINAL DESIGNATION : F LA N G E Features: • HIgh-voltaga operation: 350, 400, 450 volts ■ Gain o l 100 at 10A Applications: ■ Series/shunt regulators • Autom otive ignition


    OCR Scan     		PDF GE5060, GE5061, GE5062 20-Ampere O-204AA GE5062 IC-20A GES060 GE5060 J325 tf 115 250v 15a 100J GE5061 ge5062T tf 115 250v 2a

    GE6062

    Abstract: GE6061 ge 6061 GE6060 NPN POWER DARLINGTON TRANSISTORS
    Text: HIGH SPEED GE6060,1,2 NPN POWER DARLINGTON TRANSISTORS 400-500 VOLTS 20 AMP, 125 WATTS These devices are designed for use in high speed switching applications, such as off-line switching power supplies, A C & DC motor control, UPS systems, ultrasonic equipm ent and


    OCR Scan     		PDF GE6060 t0-204aa 20tft GE6060, GE6062 GE6061 ge 6061 NPN POWER DARLINGTON TRANSISTORS

    2N6547

    Abstract: tf 115 250v 2a 12 volt 200 Amp PWM
    Text: 2N6547 NPN POWER TRANSISTORS 400 VOLTS 15 AMP, 175 WATTS The 2N6547 transistor is designed for high-voltage, high­ speed power switching in inductive circuits where fall time is critical. It is particularly suited for 115 and 220 volt line operated switch-m ode applications such as: switching regu­


    OCR Scan     		PDF 2N6547 tf 115 250v 2a 12 volt 200 Amp PWM