TETRODE VB Search Results

la2786

Abstract: ua 741 un QQE03/20 NSP2 0407 2x55 telefunken ra 200 telefunken ra 200 amplifier 2X40 QQE03
Contextual Info: Netzröhre für GW-Heizung indirekt geheizt Parallelspeisung TELEFUNKEN DC-AC-Heating indirectly heated connected In parallel Doppel-Tetrode Twin-tetrode Doppel-Tetrode für HF-Verstärker bis 600 MHz und NF-Verslärker. Twin-tetrode for RF-amplifier and AF-amplifier.

K 713

Abstract: amplificateur hf amplificateur BF 2X40 2x460
Contextual Info: P H ILIP S QBW 5/3500 TETRODE for use as H.P. amplifier, modulator or frequen­ cy multiplier TETRODE pour utilisation en amplificatrice H.P., modulatrice ou multiplicatrice de fréquence TETRODE zur Verwendung als HF-Verstärker, Modulator oder Frequenzvervielfacher

W1A 93

Abstract: W1A 73 CONDENSATEUR PHILIPS HA-107
Contextual Info: PHILIPS QEP 20/18 TETRODE for use as pulse modulator in circuits with Induc­ tive or resistive load TETRODE pour utilisation en modulatrice d'impulsions dans circuits à charge inductive ou résistive TETRODE zur Verwendung als Impuls-liodulator in Stromkreisen

OB 3.5 750

Abstract: QB 3-300 qb 3.5/750 2x15 hp 1458 410 WG2 lp 9257 net185 PHILIPS HP LT 939
Contextual Info: PHILIPS QB 3.5/750 TETRODE for use as H.F. amplifier and oscillator TETRODE pour utilisation en amplificatrice H.P. et en oscillatrice TETRODE zur Verwendung als HF-Verstärker und Oszillator Cooling : radiation/low velocity air flow Refroidissement: radiation/léger courant d'air

2X15W

Abstract: hct 500 2x55 marconi company marconi tube company 2X40 marconi 2X400
Contextual Info: TT20/JAN. 1958 Tetrode Type TT20 U H F A M PLIFIER 46 MAX General. The TT20 is a double tetrode suitable for use as an amplifier at frequencies up to 600 Mc/s. The two tetrode systems are mounted round a common indirectly-heated oxide-coated cathode. Frequency. At frequencies above 150 Mc/s, with only

Philips schema

Abstract: QQE02 schema preamplificateur 2x45W 2x25W 2X40
Contextual Info: PHILIPS 0 0 t 02/5 DOUBLE TETRODE for use as H.F. amplifier, oscillator and frequency multiplier DOUBLE TETRODE pour utilisation enramplificatrice, os cillatrice et multiplicatrice de fréquence H.F. DOPPELTETRODE zur Verwendung als HF-Verstärker, Oszillator

Thyratron 5727

Abstract: thyratron tube 2D21 Thyratron 2D21 2D21 thyratron pl 21 PL2D21 2d21 tube thyratron tube operation PL5727 Thyratron
Contextual Info: PHILIPS PL 5727 THYRATRON; inert gas filled tetrode with negative control characteristic, specially designed to assure dependable life and reliable operation THYRATRON; tetrode à remplissage de gaz inerte avec caracté­ ristique de commande negative,_spécialement conçu pour

QQE03/12

Abstract: qqe03-12 2X15W QQE03 2x15 2x75W 2X10 Philips schema 2X40 2X39
Contextual Info: PHILIPS OQE 03/12 DOUBLE TETRODE for use as H.F. amplifier and oscillator, frequency multiplier and modulator DOUBLE TETRODE pour utilisation en amplificatrice et os­ culatrice H.F., multiplicatrice de fréquence et modulatrice DOPPELTETRODE zur Verwendung als HF-Verstärker und Os­

"Frequency Tripler"

Abstract: 40647 Tripler noval socket philips 9 pin Frequency tripler
Contextual Info: PHILIPS QQC03/14 QUICK HEATING DOUBLE TETRODE for use as output tube, frequency multiplier or modulator. The tube has been designed for intermittent filament service in transistorized mobile equipment FILAMENT: oxide coated HEATING: direct; parallel supply

marking G2s

Contextual Info: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! BF1012S

marking code g1s

Abstract: marking g1s marking G2s
Contextual Info: SIEMENS BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code

SOT 343 MARKING BF

Abstract: 2SM10 marking code g1s
Contextual Info: SIEMENS BF 2040W Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code

BF965

Contextual Info: SIEM ENS BF 965 Silicon N Channel MOSFET Tetrode • Integrated suppression network against spurious VHF oscillations • For VHF applications, especially in TV tuners with extended VHF band, e.g. CATV tuners Type Marking Ordering Code BF 965 - Q62702-F660

MOSFET Tetrode

Contextual Info: SIEMENS Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution II CM 1 =S Q62702-F1775 II NCs Package

7587 nuvistor

Abstract: nuvistor 7587 nuvistor 7587
Contextual Info: SQ PHILIPS 7587 SPECIAL QUALITY, SHOCK AND VIBRATION RESISTANT TETRODE, nuvistor type HEATINGIndirect "by A.C. or D.C. parallel supply Heater voltage Vf - 6.3 V Heater current If = 150 nA - 6.55 _ Dimensions in mm Base: TWELFAR 5 pin LIMITING VALÏÏES Absolute limits

DB1-822

Abstract: BF1012
Contextual Info: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode X AGC o HF o— Input - X Drain G2 I HF Output + DC Gl 1 GND ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration BF 1012S NYs Q62702-F1627

Contextual Info: SIEMENS BF 1005 Silicon N-Channel MOSFET Tetrode •For low-noise, gain-controlled input stages up to 1GHz ■Operating voltage 5V ■Integrated stabilized bias network Drain AGC o HF o Input HF Output + DC G1 1 GND ESD: Electrostatic discharge sensitive device, observe handling precaution!

pj 989

Contextual Info: 47E J> m S23SbOS 0Q243GS S • S I E G 1^31-35 Silicon N Channel MOSFET Tetrode BF 989 _ SIEMENS AKTIENGESELLSCHAF • • _ For amplifier and mixer stages in UHF and VHF TV tuners Low input and output capacitance Type Marking Ordering code

marking jls

Abstract: marking code g1s
Contextual Info: SIEMENS BF 1009S Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network Droin HF Output + DC E H A 0 7 2 Î5 ESD: Electrostatic discharge sensitive device, observe handling precaution!

d 998 transistor circuit

Contextual Info: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 4 1 2 3 Package1) B F 998

Contextual Info: SIEMENS flE3SbOS OOTODSa TTl BF 1005 Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network i D rain G21 AGC ° - HF °-II— In p u t HF O utp ut

13E1

Abstract: 13EI tetrode ediswan beam gm Scans-0017294
Contextual Info: I3EI BEAM TET R O D E Indirectly heated— for O.C. Control Applications G ENERAL This Low Impedance Beam Tetrode is intended or general D.C. Control applications and has a centre tapped heater. It is suitable for Triode connection and has a maximum anode dissipation of 90 watts.

BRY 41

Abstract: BRY21 SIEMENS FAST THYRISTOR Tetrode pnpn
Contextual Info: ISIEG ESC D • Ö235b05 G0Q47b7 b PNPN Thyristor Tetrode BRY21 SIEMENS AKTIENGESELLSCHAF The BRY 21 is an extinguishable PNPN silicon planar thyristortetrode in T 0 12 case 5 C 4 DIN 41 873 . The anode gate (Ga ) is electrically connected to the case. The BRY 21 is particularly

marking code g1s

Contextual Info: BF 1012 SIEMENS Silicon N-Channel MOSFET Tetrode ’ For low-rioise, gain-controlled input stages up to 1GHz •Operating voltage 12V 1Integrated bias network X Oroin 0 -J-G 2 AGC HF o Input G1 1 HF Output + DC > " J gñd" ESD : Electrostatic discharge sensitive device, observe handling precaution!