BE423
Abstract: No abstract text available
Text: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro
|
OCR Scan
|
TC5118325BJ/BFT-70
TC5118325BJ/BFT
TC5118325BJ/
400mil)
I/024
I/025
I/032
BE423
|
PDF
|
TC514170BJ-80
Abstract: tc514170 TC514170BJ80
Text: TOSHIBA TC514170BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514170BJ is the new generation dynam ic RAM organized 262,144 word by 16 bit. The TC514170BJ utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit techniques
|
OCR Scan
|
TC514170BJ-70/80
TC514170BJ
TC514170BJ-80
tc514170
TC514170BJ80
|
PDF
|
TC5117800bnt-60
Abstract: TC5117800B
Text: TOSHIBA TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC5117800BNT is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC5117800BNT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,
|
OCR Scan
|
TC5117800BNJ/BNT-60/70
TC5117800BNT
TC5117800bnt-60
TC5117800B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY 4,194,304 WORD x 1 BIT DYNAMIC RAM DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.
|
OCR Scan
|
TC514101AP/AJ/ASJ/AZ
300/350mil)
TC514101AP/ASJ/AZ.
TC514101AP/AJ/ASJ/A2-70,
TC514101AP/AJ/ASJ/AZ-80
TC514101AP/AJ/ASJ/AZ-10
|
PDF
|
TC514265DJ
Abstract: TC514265D TC514265 SOJ40-P-400
Text: TOSHIBA TC514265DJ/DFT-50/60/70 PRELIMINARY 262,144 WORD X 16 BIT EDO HYPER PAGE DYNAMIC RAM Description TheTC514265DJ/DFT is an EDO (hyper page) dynamic RAM organized as 262,144 words by 16 bits. TheTC514265DJ/ DFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide oper
|
OCR Scan
|
TC514265DJ/DFT-50/60/70
TheTC514265DJ/DFT
TheTC514265DJ/
TC514265DJ/DFT
TC514265D
J/DFT-50/60/70
DR04041293
TC514265DJ
TC514265
SOJ40-P-400
|
PDF
|
flyback uc3843 application
Abstract: uc3843 inverter circuit IC uc3843 uc3843 discontinuous Unitrode DN flyback uc3843 UC3843 flyback application note unitrode uc3843 unitrode Applications Note uc3843 uc3843 12v to 5v
Text: DN-43 UNITRODE Design Note Simple Techniques to Generate a Negative Voltage Bias Supply from a Positive input Voltage by Bill Andreycak Developing a low power negative supply voltage from a positive input supply can be accomplished using som e very common PW M control ICs. Typical
|
OCR Scan
|
DN-43
RS-232
flyback uc3843 application
uc3843 inverter circuit
IC uc3843
uc3843 discontinuous
Unitrode DN
flyback uc3843
UC3843 flyback application note
unitrode uc3843
unitrode Applications Note uc3843
uc3843 12v to 5v
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TC51V16400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheTC 51V16400B ST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. T heTC 51V16400B ST uti lizes Toshiba's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide operating mar
|
OCR Scan
|
TC51V16400BST-60/70
51V16400B
TC51V16400BST
300mil)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TLC0820AC, TLC0820AI Advanced LinCMOS HIGH-SPEED 8-BIT ANALOG-TO-DIGITAL CONVERTERS USING MODIFIED FLASH TECHNIQUES SLAS064A – SEPTEMBER 1986 – REVISED JUNE 1994 D D D D D D D D Advanced LinCMOS Silicon-Gate Technology 8-Bit Resolution Differential Reference Inputs
|
Original
|
TLC0820AC,
TLC0820AI
SLAS064A
TLC0820A
ADC0820C/CC
AD7820K/B/T
TLC0820ACDBR
TLC0820ACDW
TLC0820ACDWR
TLC0820ACFN
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SN55LVDS32, SN65LVDS32, SN65LVDS3486, SN65LVDS9637 HIGH-SPEED DIFFERENTIAL LINE RECEIVERS SLLS262I – JULY 1997 – REVISED SEPTEMBER 2000 The intended application of these devices and signaling technique is both point-to-point and multidrop one driver and multiple receivers data
|
Original
|
SN55LVDS32,
SN65LVDS32,
SN65LVDS3486,
SN65LVDS9637
SLLS262I
TIA/EIA-644
AM26LS32,
MC3486,
A9637
SN55LVDS32
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KBP201G thru KBP207G Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Ideal for printed circuit board - Reliable low cost construction utilizing molded plastic technique - High surge current capability - UL Recognized File # E-326243
|
Original
|
KBP201G
KBP207G
E-326243
2011/65/EU
2002/96/EC
JESD22-B102
D1311019
|
PDF
|
15514
Abstract: No abstract text available
Text: SiB410DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
SiB410DK
AN609,
8029u
6830m
5384m
0019m
0110u
9058u
5505u
15514
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFZ44S_RC, IRFZ44L_RC, SiHFZ44S_RC, SiHFZ44LL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
|
Original
|
IRFZ44S
IRFZ44L
SiHFZ44S
SiHFZ44LL
AN609,
THERMAZ44S
9021m
9076m
0860m
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFP21N60L_RC, SiHFP21N60L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
|
Original
|
IRFP21N60L
SiHFP21N60L
AN609,
07-Jun-10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFIBC40G_RC, SiHFIBC40G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
|
Original
|
IRFIBC40G
SiHFIBC40G
AN609,
31-May-10
|
PDF
|
|
|
si2366
Abstract: No abstract text available
Text: Si2366DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
Si2366DS
AN609,
J2523
4374u
1469m
9180m
0805u
5327u
7530m
0215u
si2366
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFD014_RC, SiHFD014_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
IRFD014
SiHFD014
AN609,
CONFIGURA5-Oct-10
3009m
0416u
6348m
9120m
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRLR024_RC, IRLU024_RC, SiHLR024_RC, SiHLU024_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
|
Original
|
IRLR024
IRLU024
SiHLR024
SiHLU024
AN609,
9731m
2316m
0467m
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si4202DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
Si4202DY
AN609,
2175m
2923m
2439m
3089u
1542m
7069m
8017m
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFZ48R_RC, SiHFZ48R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
IRFZ48R
SiHFZ48R
AN609,
6055m
9011m
2958m
1718m
3035m
|
PDF
|
14093
Abstract: 75431
Text: Si9945BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
Si9945BDY
AN609,
3203u
3659m
8029m
3567u
2443m
3998m
0795m
14093
75431
|
PDF
|
driver injectors
Abstract: high side gate driver GTO FAN7083
Text: FAN7083_GF085 High Side Gate Driver with Reset Features Description • Qualified to AEC Q100 The FAN7083_GF085 is a high-side gate drive IC with reset input. It is designed for high voltage and high speed driving of MOSFET or IGBT, which operates up to 600V. Fairchild's highvoltage process and common-mode noise cancellation technique provide stable operation in the high side driver under
|
Original
|
FAN7083
GF085
GF085
driver injectors
high side gate driver GTO
|
PDF
|
loop control TL431
Abstract: u116 Unitrode DN photo coupler application note 431 regulator
Text: DN-32 Design Note OPTOCOUPLER FEEDBACK DRIVE TECHNIQUES The use of optocouplers in the feedback path of switch mode power supplies is probably one of the most com mon practices in the industry. Benefits of this method include low component cost, high voltage isolation and
|
OCR Scan
|
DN-32
TL431
UC3832
UC3833
UC3832.
U-116
loop control TL431
u116
Unitrode DN
photo coupler application note
431 regulator
|
PDF
|
SH2100
Abstract: SH21-5
Text: SH Series Precision Metal-Clad Shunts L3 ±2 L1 ±1.5 6.5ø 10 slot ø6.0 holes 60mm ±.5 30mm ±.2 40mm ±.5 ø6.5 holes L2 ±1.5 400mm ±10 Precision metal clad resistors designed in four-terminal technique, are distinguished by high load capacity as well
|
Original
|
400mm
SH2-100R0010DE
SH2-150R0006DE
SH2-200R0005DE
SH3-250R0004DE
SH3-300R0003DE
SH2-200R0005DE
1-866-9-OHMITE
SH2100
SH21-5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSA 274 SINGLE TIER 5mm 3 LEADED TRI-COLOUR CIRCUIT BOARD INDICATOR A protruding LED for through panel mounting.The 3 leaded 5mm package allows direct drive to each of the Red & Green chips to produce Red, Green or a mix of both. BOT’s unique baseplate technique
|
Original
|
|
PDF
|
