Untitled
Abstract: No abstract text available
Text: IRFP21N60L_RC, SiHFP21N60L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFP21N60L
SiHFP21N60L
AN609,
07-Jun-10
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Untitled
Abstract: No abstract text available
Text: IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 150 Qgs (nC) 46 Qgd (nC) 64 Configuration
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IRFP21N60L,
SiHFP21N60L
2002/95/EC
O-247AC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 150 Qgs (nC) 46 Qgd (nC) 64 Configuration
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IRFP21N60L,
SiHFP21N60L
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SiHFP21N60L
Abstract: IRFP21N60L
Text: IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 150 Qgs (nC) 46 Qgd (nC) 64 Configuration
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IRFP21N60L,
SiHFP21N60L
O-247
18-Jul-08
IRFP21N60L
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IRFP21N60L
Abstract: SiHFP21N60L
Text: IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 150 Qgs (nC) 46 Qgd (nC) 64 Configuration
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Original
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PDF
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IRFP21N60L,
SiHFP21N60L
O-247
18-Jul-08
IRFP21N60L
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Untitled
Abstract: No abstract text available
Text: IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 150 Qgs (nC) 46 Qgd (nC) 64 Configuration
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Original
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PDF
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IRFP21N60L,
SiHFP21N60L
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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s8192
Abstract: No abstract text available
Text: IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 150 Qgs (nC) 46 Qgd (nC) 64 Configuration
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Original
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PDF
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IRFP21N60L,
SiHFP21N60L
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
s8192
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Untitled
Abstract: No abstract text available
Text: IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 150 Qgs (nC) 46 Qgd (nC) 64 Configuration
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Original
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PDF
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IRFP21N60L,
SiHFP21N60L
O-247
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 150 Qgs (nC) 46 Qgd (nC) 64 Configuration
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Original
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PDF
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IRFP21N60L,
SiHFP21N60L
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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