TC74HCXXXA Search Results

Contextual Info: CONTENTS HIGH SPEED CMOS PRODUCT GUIDE _ 6 HIGH SPEED CMOS SELECTION G U ID E_ 11 PRODUCT OUTLINE OF THE TC74HCxxxA SERIES_ 3-1 F eatures

Contextual Info: TABLE of CONTENTS Part 1 ♦ HS-C2 MOS LOGIC TC74HC SERIES . 5 1. HIGH SPEED CMOS PRODUCT G U ID E. 7 2. HIGH SPEED CMOS SELECTION GUIDE. 13 3. PRODUCT OUTLINE OF THE TC74HCxxxA SERIES . 49

74HC74P

Abstract: 74hc00a
Contextual Info: 3 . PRODUCT OUTUNE OF THE TC74HCxxxA SERIES T he T C 74H C xxxA se ries is a n im proved H igh Speed L ogic developm ent of T O SH IB A . S o m e of these im p ro v e m en ts a re o utlined below: 1 In creased Speed of O peration: Over 20 co m p an ies now m a n u fa c tu re the 74HC se rie s w orldw ide. T he JE D E C JC 40.2 c o m m itte e

TC74HCOOP

Abstract: TC40HXXX
Contextual Info: 3. P R O D U C T O U T L I N E OF T H E TC74HCxxxA S E R I E S The TC74HCxxxA series is an improved High Speed Logic development of TOSHIBA. Some of these improvements are outlined below: 1 Increased Speed of Operation: Over 20 companies now m anufacture the 74HC series worldwide. The JEDEC JC40.2 committee

4500B

Abstract: 74LS240-74HC240 TC74HC00P toshiba suffixes TC74HC74P
Contextual Info: 3. P RO DU CT O UT LINE OF THE TC74HCxxxA S E R IE S The TC74HCxxxA series is an improved High Speed Logic development of TOSHIBA. Some of these improvements are outlined below: 1 Increased Speed of Operation: Over 20 companies now manufacture the 74HC Beries worldwide. The JEDEC JC40.2 committee

Contextual Info: CONTENTS 1. HIGH SPEED C M O S PRODUCT GUIDE - HC-4 2. HIGH SPEED C M O S SELECTION GUIDE - 3. PRODUCT OUTLINE OF THE TC74HCxxxA SERIES - 48

TC74HCOOP

Abstract: TC74HC00P TC74HCOOAP TC74HC74P 4500B 74HC7266A TOSHIBA el suffix TC40HXXX
Contextual Info: C2MOS Logic TC74HC/HCT Series 3. Product Outline of the TC74HCxxxA Series The TC74HCxxxA series is an improved high speed logic development of Toshiba. Some of these improvements are outlined below: 1 Increased Speed of Operation: Over 20 companies now manufacture the 74HC series

high power diode 500v

Abstract: HC93
Contextual Info: 8 P R E C A U T I O N S IN H A N D L I N G 8-1 Electro-Static Discharge A CMOS IC has a very thin gate insulation oxide film. When high voltage is applied to this gate electrode input of CMOS IC , the oxide film directly under the gate can sometimes break down. In the TC74HCxxxA series, as shown in Fig. 8-1,

74hc74ap

Contextual Info: 8 P R E C A U T I O N S IN H A N D L I N G 8 -1 E le ctric Static D is c h a r g e CMOS IC has a very thin gate insulation oxide film . When high voltage is applied to this gate electrode input of CMOS IC , the oxide film directly under the gate can sometimes breaks down. In

TC74HCOOAP

Contextual Info: Precautions in Handling C2MOS Logic TC74HC/HCT Series 8. Precautions in Handling Table 8-1. Test Result Input Output 8-1 Electric Static Discharge CMOS IC has a very thin gate insulation oxide film. When high voltage is applied to this gate electrode input of CMOS IC ,

74HCXXX

Abstract: 74HCxx TSSOP48 CMOS4000 STMicroelectronics package outline dip 74LX1G M013TR M74HCXXXM1R TC74HCTXXXAP SN74ACTXXXPW
Contextual Info: Surface mounting packages Standard Logic ICs SO-8 SO-14 SO-16L SO-16 SO-20 SO-24 Cross reference guide TSSOP14 SOT23-8L TSSOP20 TSSOP16 SOT23-5L SOT323-5L Flip-Chip4 TSSOP48 TSSOP24 µFBGA42 Package TFBGA54 TFBGA96 H inch W (tape width mm) P (mm) D (mm)

Contextual Info: firh. ; p; 1.993 INTRODUCTION During the last several years, the scale of integration of LSI’s has increased rapidly. Because of this progress, heat radiation has a big problem, similar to the way that bipolar LSI’s have been struggling for many years, it is well known that only

74HCXXX

Abstract: TC74HC20P 648p TC74HCOOP TC74HC574P TC74HC163P 244P T648P
Contextual Info: C H A N G E-O V ER TO THE NEW ENHANCED VERSION Announce of the discontinuation of current products TOSHIBA has been producing 176 types of TC74HCxxx series since 1982 which are well accepted in the w orld-w ide m arket place. The last year, TOSHIBA started supplying a new enhanced version which is em ployed with refined

internal structure of ic 4017

Abstract: 4518 CI increase the output of Ic 4017 4511 e 4518 CI
Contextual Info: 7. COMMON ELECT RICAL CHARACTERISTICS 7 -1 Pow er Dissipation The power dissipation of CMOS device is com posed of two com ponents: one static, the other dynam ic. The total power dissipation is the sum of static and dynam ic power dissipation. Static power dissipation is obtained by m ultiplying quiescent supply current by the supply voltage

74HCxxx

Contextual Info: INTRODUCTI ON D uring the last several years, the scale of integration of LSI’s has increased rapidly. Because of this progress, heat radiation has become a big problem , sim ilar to the way that bipolar L SI’s have been struggling for m any years, it is well known that only CMOS technology can reduce this problem . The use of CMOS

similar ic book

Abstract: toshiba logic 74hc
Contextual Info: INTRODUCTION During the last several years, the scale of integration of LSI’s has increased rapidly. Because of this progress, heat radiation has become a big problem, similar to the way that bipolar LSI’s have been struggling for many years. It is well known that only

74ALS

Abstract: 74AS 74F240 TC74AC TC74ACT240F LTO 100 F
Contextual Info: TOSHIBA 3.1. [3 ] i p np H M TC74AC V V - * m m t * ^ ^ O X l i , C M O S fflt m a X & ffîfc ¿ C 2M 0S7 I r a iC ^ r ? n * t o it lS c t , / g Î b ilîM ^ >9 Ü Ï j É ^ ^ ° - 7 n y ' 7 ^ I C ¿ i . 9 ü & M & à H t o G a te ^ fë M M E B ^ ^ tp L H /tp H L :3 .5 n s @ V CC = 5 V ,

M74HCxxxTTR

Abstract: 74ABT FAIRCHILD HEF4000B MM74HC nxp Cross-reference HEF4000 LVT32 SN74HC 74HC HC PORTFOLIO
Contextual Info: General-purpose logic solutions Commitment and innovation 2 Logic solutions Commitment and innovation NXP is deeply committed to the logic market and continually invests in new process and package technologies, and packaging facilities, to ensure that our portfolio remains leadingedge. We offer a very broad variety of innovative

internal structure of ic 4017

Abstract: 4518 CI
Contextual Info: C2MOS Logic TC74HC/HCT Series 7. Common Electrical Characteristics 7-1 Power Dissipation The power dissipation of CMOS device is composed of two components: one static, the other dynamic.The total power dissipation is the sum of static and dynamic power dissipation.

hef4051

Abstract: 74AUP2G34 74LVT1403 74ABT543A 74LV74 74AVCH1T45 74HC590 CBTD3306 NCX2200 74HC40103
Contextual Info: ロジック IC データスイッチ/アナログスイッチ コンパレータ レベルシフタ 汎用ロジック Index 2 ●● P3 NXP ロジック ●● P4 低抵抗アナログスイッチ/データスイッチ ●● P7 コンパレータ ●●

TC74HCOOP

Abstract: 4543p 648P 4049P tc74hc20p 109AP 354P 132ap 16 bit D type latch 42AP
Contextual Info: CHANGE-OVER TO THE NEW ENHANCED VERSION Since 1982 TOSHIBA has been producing 176 types of TC74HCxxx series, which are well accepted in the world-wide market place. In 1987, applying enhanced design and process technology, TOSHIBA developed the “A” version of that series.

TC4069 OSCILLATOR

Abstract: TC40HXXX tc4011bp applications MC14500B Industrial Control Unit cmos integrated circuits TC4069 equivalent
Contextual Info: OUTLINE 1. C 2M0S I C F a mi ly 1.1 CMOS and C 2M0S "CMOS" is an abbreviation of "Complementary Metal Oxide Semi­ conductor", and "Complementary" means to combine P-channel type MOS FET and N-channel type MOS FET complementarily. The CMOS circuit configuration, since its announcement at ISSCC in 1963, attracted

74HC373AP

Abstract: 74hc240ap 74hc139ap 74HC74AP HC02A
Contextual Info: 8. PRECAUTIONS IN HANDLING 1 E le c t r ic S ta t ic D is c h a r g e CMOS IC has a very thin gate insulation oxide film. When high voltage is applied to this gate electrode input of CMOS 1C , the oxide film directly under th e gate can som etimes break down. In