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    TC55V1664J Price and Stock

    Toshiba America Electronic Components TC55V1664J12

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    Bristol Electronics TC55V1664J12 8
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    Toshiba America Electronic Components TC55V1664J-15

    IC,SRAM,64KX16,CMOS,SOJ,44PIN,PLASTIC
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    Quest Components TC55V1664J-15 5
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    TC55V1664J Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC55V1664J-12 Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC55V1664J-15 Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF

    TC55V1664J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC554161FTL-85L

    Abstract: TC55257DPL-70L TC55257DFL-70L TC55257DPL-85L TC55257DFI-85L TC551001CF tc55257dfl-85l TC58F400FTI-90
    Text: Index n INDEX TC551001CF-55 TC551001CF-55L TC551001CF-70 TC551001CF-70L TC551001CF-85 TC551001CF-85L TC551001CFI-70 TC551001CFI-70L TC551001CFI-85 TC551001CFI-85L TC551001CFT-55 TC551001CFT-55L TC551001CFT-70 TC551001CFT-70L TC551001CFT-85 TC551001CFT-85L


    Original
    PDF TC551001CSRI-85L TC551001CST-55 TC551001CST-55L TC551001CST-70 TC551001CST-70L TC551001CST-85 TC551001CST-85L TC551001CSTI-70 TC551001CSTI-70L TC551001CSTI-85 TC554161FTL-85L TC55257DPL-70L TC55257DFL-70L TC55257DPL-85L TC55257DFI-85L TC551001CF tc55257dfl-85l TC58F400FTI-90

    toshiba toggle mode nand

    Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
    Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit


    Original
    PDF 64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1664J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC55V1664J/FT is a 1,048.5,'6 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 3.3V sjpply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.


    OCR Scan
    PDF TC55V1664J/FT-10/12/15 TC55V1664J/FT TC55V-: 664J/FT TC55V1 B-135

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC55V1664J-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664J is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed


    OCR Scan
    PDF TC55V1664J-12 536-WORD 16-BIT TC55V1664J 576-bit SOJ44-P-400-1

    Untitled

    Abstract: No abstract text available
    Text: TC55V1664J-12,-15 TO SH IB A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664J is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed


    OCR Scan
    PDF TC55V1664J-12 TC55V1664J 576-bit TC55V1664) SOJ44-P-400-1

    l2a14

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1664J/FT - 1 2 , TC55V1664J/FT - 1 5 TECHNICAL DATA ! SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM DESCRIPTION The TC55V1664J/FT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bit« using CMOS technology, and operated from a single 3.3-volt supply. Toshiba’s CMOS


    OCR Scan
    PDF TC55V1664J/FT SOJ44 TC55V1664J/FT--> TC55V1664J/FT-12, l2a14

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TO SHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC55V1664J-12 TC55V1664J-15 SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664J is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536


    OCR Scan
    PDF TC55V1664J-12 TC55V1664J-15 536-WORD 16-BIT TC55V1664J 576-bit TC55V1664J SOJ44-P-400)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1664J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC55V1664J/FT is a 1,048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 3.3V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.


    OCR Scan
    PDF TC55V1664J/FT-10/12/15 TC55V1664J/FT TC55aranteed 002b424 B-135

    TC55V1664J-15

    Abstract: SOJ44-P-400-1 TC55V1664J-12
    Text: TC55V1664J-12,-15 TO SHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664J is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed


    OCR Scan
    PDF TC55V1664J-12 536-WORD 16-BIT TC55V1664J 576-bit SOJ44-P-4QO-1 TC55V1664J-15 SOJ44-P-400-1

    TC55B4257

    Abstract: TC551664J-20
    Text: X6 Capacity 288KBit Type No. Organization 15 15 TC55329AP/AJ-20 20 20 TC55329AP/AJ-25 25 25 TC56329AP/AJ-35 32,768 x 9 35 35 TC55B329P/J-10 10 10 TC55B329P/J-12 12 12 TC55B329P/J-15 15 15 20 20 25 25 TC551632J-36 35 35 TC5SB4256J-12 12 12 TC55B4256J-15 15


    OCR Scan
    PDF TC55329AP/AJ-15 TC55329AP/AJ-20 TC55329AP/AJ-25 288KBit TC56329AP/AJ-35 TC55B329P/J-10 TC55B329P/J-12 TC55B329P/J-15 TC551632J-20 512KBit TC55B4257 TC551664J-20