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    TC55V1 Price and Stock

    ARCOTEK TC55V1001AFTI-85L

    SRAM ASYNC SLOW 1M 128Kx8 3.3V 3
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    DigiKey TC55V1001AFTI-85L Reel 2,000
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    Toshiba America Electronic Components TC55V1001AFTI-10

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    Bristol Electronics TC55V1001AFTI-10 13,178
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    Quest Components TC55V1001AFTI-10 10,480
    • 1 $6
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    • 1000 $2.4
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    TC55V1001AFTI-10 507
    • 1 $6
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    Toshiba America Electronic Components TC55V1325FF-8

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    Bristol Electronics TC55V1325FF-8 1,803 3
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    Quest Components TC55V1325FF-8 19,375
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    TC55V1325FF-8 1,012
    • 1 $3.4
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    • 1000 $0.935
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    TC55V1325FF-8 388
    • 1 $3
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    • 1000 $0.975
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    Toshiba America Electronic Components TC55V16256FTI-15

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    Bristol Electronics TC55V16256FTI-15 1,019
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    Toshiba America Electronic Components TC55V1664BFT-12

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    Bristol Electronics TC55V1664BFT-12 700
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    Find more TC55V1 price and stock on Findchips.com

    TC55V1 Datasheets (266)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC55V1001AF Toshiba 131,072-Word BY 8-BIT CMOS STATIC RAM Scan PDF
    TC55V1001AF-10 Toshiba 131,072-Word BY 8-BIT CMOS STATIC RAM Scan PDF
    TC55V1001AF-10L Toshiba 131,072-Word BY 8-BIT CMOS STATIC RAM Scan PDF
    TC55V1001AF-70 Toshiba 131,072 Word by 8 Bit Static RAM Scan PDF
    TC55V1001AF-70L Toshiba 131,072 Word by 8 Bit Static RAM Scan PDF
    TC55V1001AF-85 Toshiba 131,072-Word BY 8-BIT CMOS STATIC RAM Scan PDF
    TC55V1001AF-85L Toshiba 131,072 Word by 8 Bit Static RAM Scan PDF
    TC55V1001AF-85L Toshiba 131,072-Word BY 8-BIT CMOS STATIC RAM Scan PDF
    TC55V1001AFI Toshiba 131,072-Word BY 8-BIT CMOS STATIC RAM Scan PDF
    TC55V1001AFI-10 Toshiba 131,072 Word by 8 Bit Static RAM Scan PDF
    TC55V1001AFI-10 Toshiba 131,072-Word BY 8-BIT CMOS STATIC RAM Scan PDF
    TC55V1001AFI-10L Toshiba 131,072 Word by 8 Bit Static RAM Scan PDF
    TC55V1001AFI-10L Toshiba 131,072-Word BY 8-BIT CMOS STATIC RAM Scan PDF
    TC55V1001AFI-70 Toshiba 131,072 Word by 8 Bit Static RAM Scan PDF
    TC55V1001AFI-70L Toshiba 131,072 Word by 8 Bit Static RAM Scan PDF
    TC55V1001AFI-85 Toshiba 131,072 Word by 8 Bit Static RAM Scan PDF
    TC55V1001AFI-85 Toshiba 131,072-Word BY 8-BIT CMOS STATIC RAM Scan PDF
    TC55V1001AFI-85L Toshiba 131,072 Word by 8 Bit Static RAM Scan PDF
    TC55V1001AFI-85L Toshiba 131,072-Word BY 8-BIT CMOS STATIC RAM Scan PDF
    TC55V1001AFT-10 Toshiba 131,072 Word by 8 Bit Static RAM Scan PDF
    ...

    TC55V1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GS8160Z18BT-150

    Abstract: TC55V16186FF-133 TC55V16176FF-150 TC55V16176FF-167 TC55V16186FF-150 TC55V16186FF-167 TC55V16256FT-12 TC55V16256FT-15 TC55V16256FT-20 TC55V16256FT-25
    Text: TOSHIBA For Toshiba: Add "I" after package designator for Industrial Temp. For example: the TC55VD818FF-133 becomes the TC55VD818FFI-133 for industrial temp. For GSI: Add "I" at the end of part number for Industrial Temp. TC55V16176FF-150 TC55V16176FF-167


    Original     		PDF TC55VD818FF-133 TC55VD818FFI-133 TC55V16176FF-150 TC55V16176FF-167 TC55V16186FF-133 TC55V16186FF-150 TC55V16186FF-167 TC55V16256FT-12 TC55V16256FT-15 TC55V16256FT-20 GS8160Z18BT-150 TC55V16186FF-133 TC55V16176FF-150 TC55V16176FF-167 TC55V16186FF-150 TC55V16186FF-167 TC55V16256FT-12 TC55V16256FT-15 TC55V16256FT-20 TC55V16256FT-25

    SOJ44-P-400-1

    Abstract: No abstract text available
    Text: TC55V16256JI/FTI-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    Original     		PDF TC55V16256JI/FTI-12 144-WORD 16-BIT TC55V16256JI/FTI 304-bit SOJ44-P-400-1

    260-pin

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1864J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 18 BIT CMOS STATIC RAM Description TC55V1864J/FT is a 1,179,648 bit high speed CMOS static random access memory organized as 65,536 words by 18 bits and operated from a single 3.3V : upply. Toshiba’s advanced CMOS technology and circuit design enable high speed operation.


    OCR Scan     		PDF TC55V1864J/FT-10/12/15 TheTC55V1864J/FT TC55V1864J/FT TC55V1864J/ B-143 260-pin

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1664J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC55V1664J/FT is a 1,048.5,'6 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 3.3V sjpply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.


    OCR Scan     		PDF TC55V1664J/FT-10/12/15 TC55V1664J/FT TC55V-: 664J/FT TC55V1 B-135

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1403J/FT-15.-20 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 1-BIT/1,048,576-WORD BY 4-BIT C M O S STATIC R A M DESCRIPTION The TC55V1403J/FT is a 4,194,304-bit high speed static random access memory SRAM , it is possible to


    OCR Scan     		PDF TC55V1403J/FT-15 304-WORD 576-WORD TC55V1403J/FT 304-bit SOJ32-P-400-1 PII32-P-400-1 35MAX

    bft10

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE TC55V1664BJ/BFT-10,-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


    OCR Scan     		PDF TC55V1664BJ/BFT-10 536-WORD 16-BIT TC55V1664BJ/BFT SOJ44-P-400-1 44-P-400-0 bft10

    TC55V16176FF

    Abstract: TC55V16176FF-167
    Text: TOSHIBA TC55V16176FF-167,-150,-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 18-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V16176FF is a 18,874,368-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		PDF TC55V16176FF-167 576-WORD 18-BIT TC55V16176FF 368-bit LQFP100-P-1420-0

    TC55V16366FF-167

    Abstract: No abstract text available
    Text: TOSHIBA TC55V16366FF-167#-150#-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V16366FF is a 18,874,368-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		PDF TC55V16366FF-167 288-WORD 36-BIT TC55V16366FF 368-bit LQFP100-P-1420-0

    TC55V16100FT-10

    Abstract: TC55V16100FT-12 TC55V16100FT-15
    Text: T O S H IB A TC55V16100FT-10,-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16100FT is a 16,777,216-bit high-speed static random access memory SRAM organized as 1,048,576 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide


    OCR Scan     		PDF TC55V16100FT-10 576-WORD 16-BIT TC55V16100FT 216-bit 54-P-400-0 TC55V16100FT-12 TC55V16100FT-15

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC55V1664J-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664J is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed


    OCR Scan     		PDF TC55V1664J-12 536-WORD 16-BIT TC55V1664J 576-bit SOJ44-P-400-1

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED T O SH IB A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC55V1864 J /FT -15 DATA SILICON GATE CMOS 65,536-WORD BY 18-BIT CMOS STATIC RAM DESCRIPTION The TC55V1864J/FT is a 1,179,648-bit high-speed static random access memory SRAM organized as 65,536


    OCR Scan     		PDF TC55V1864 536-WORD 18-BIT TC55V1864J/FT 648-bit TC55V1864J/FTâ SOJ44-P-400)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1664BJ/BFT-1Q,-12 T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILICO N G A TE C M O S 65,536-W ORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as


    OCR Scan     		PDF TC55V1664BJ/BFT-1Q 16-BIT TC55V1664BJ/BFT 10172M7 TC55V1664BJ/BFT-10

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1001 F/FT/TR/ST/SR-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001F/FT/TR/ST/SR is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a


    OCR Scan     		PDF TC55V1001 F/FT/TR/ST/SR-85 072-WORD TC55V1001F/FT/TR/ST/SR 576-bit 775TYP 32-P-0820-0

    TC55V16256J

    Abstract: No abstract text available
    Text: TOSHIBA TC55V16256J/FT-12,-15 TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE CM O S 262,144-WORD BY 16-BIT CM O S STATIC RAM DESCRIPTION The TC55V16256J/FT is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan     		PDF TC55V16256J/FT-12 144-WORD 16-BIT TC55V16256J/FT 304-bit SOJ44-P-4QO-1 44-P-400-0 TC55V16256J

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V16366FF-167#-150#-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V16366FF is a 18,874,368-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		PDF TC55V16366FF-167# 288-WORD 36-BIT TC55V16366FF 368-bit LQFP100-P-1420-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V16176FF-167,-150,-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 18-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V16176FF is a 18,874,368-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		PDF TC55V16176FF-167 TC55V16176FF 368-bit LQFP100-P-1420-0

    TC55V1664FT-12

    Abstract: TC55V1664FT-13 TC55V1664FT-15
    Text: TOSHIBA TC55V1664FT-12,-13,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664FT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed


    OCR Scan     		PDF TC55V1664FT-12 536-WORD 16-BIT TC55V1664FT 576-bit 44-P-400-0 TC55V1664FT-13 TC55V1664FT-15

    SOJ44-P-400-1

    Abstract: TC55V16256FTI TC55V16256JI
    Text: TO SH IBA T C 5 5 V 16256J l/FTI-12#- 1 5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan     		PDF TC55V16256JI/FTI-12 144-WORD 16-BIT TC55V16256JI/FTI 304-bit SOJ44-P-4QO-1 44-P-400-0 W0-13tM SOJ44-P-400-1 TC55V16256FTI TC55V16256JI

    TC55V16256J

    Abstract: No abstract text available
    Text: TO SHIBA TC55V16256J/FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256J/FT is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan     		PDF TC55V16256J/FT-12 144-WORD 16-BIT TC55V16256J/FT 304-bit SOJ44-P-4QO-1 44-P-400-0 TC55V16256J

    TC55V1326AFF

    Abstract: TC55V1326AFF-66 TC55V1326
    Text: TOSHIBA TC55V1326AFF-66 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 32,768-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V1326AFF is a 1,048,576-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		PDF TC55V1326AFF-66 768-WORD 32-BIT TC55V1326AFF 576-bit LQFP100-P-1420-0 TC55V1326AFF-66 TC55V1326

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC 55V1001 AF/AFT/ATR/AST/ASR-70,-70 L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WC RD BY 8-B IT STATIC RAM DESCRIPTION The TC55V1001 AF/AFT/ATR/AST/ASR is a 1,048,576-bit static random access memory SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device


    OCR Scan     		PDF 072-WC 55V1001 AF/AFT/ATR/AST/ASR-70 TC55V1001 576-bit S-TD-79E 1001AF/AFT/AT R-70f-70 32-P-0820-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V16356FF-167,-150,-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V16356FF is a 18,874,368-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		PDF TC55V16356FF-167 TC55V16356FF 368-bit LQFP100-P-1420-0

    SOJ44-P-400-1

    Abstract: TC55V1664BFT
    Text: TOSHIBA TC55V1664BJ/BFT-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


    OCR Scan     		PDF TC55V1664BJ/BFT-10 536-WORD 16-BIT TC55V1664BJ/BFT SOJ44-P-4QO-1 44-P-400-0 SOJ44-P-400-1 TC55V1664BFT

    I03c

    Abstract: SOJ44-P-400-1 TC55V1664BFT
    Text: TOSHIBA TC55V1664BJ/BFT-8 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


    OCR Scan     		PDF TC55V1664BJ/BFT-8 536-WORD 16-BIT TC55V1664BJ/BFT SOJ44-P-4QO-1 44-P-400-0 I03c SOJ44-P-400-1 TC55V1664BFT