TC55NEM216ATGN55 Search Results

TC55NEM216ATGN55 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TC55NEM216ATGN55		Toshiba	262,144-Word BY 16-BIT FULL CMOS STATIC RAM		Original	PDF

TC55NEM216ATGN55 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TC55NEM216ATGN Abstract: TC55NEM216ATGN55 TC55NEM216 Text: TC55NEM216ATGN55,70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55NEM216ATGN is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ±	Original	TC55NEM216ATGN55 144-WORD 16-BIT TC55NEM216ATGN 304-bit TC55NEM216	PDF

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TC55NEM216ATGN

Abstract: TC55NEM216ATGN55 TC55NEM216
Text: TC55NEM216ATGN55,70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55NEM216ATGN is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ±

Original

TC55NEM216ATGN55 144-WORD 16-BIT TC55NEM216ATGN 304-bit TC55NEM216

PDF