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    Toshiba America Electronic Components TC55NEM216ATGN70

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    Quest Components TC55NEM216ATGN70 14
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    TC55NEM216 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC55NEM216AFTN Toshiba SRAM - Low Power Original PDF
    TC55NEM216AFTN55 Toshiba 262,144 Word By 16 Bit Full CMOS Static RAM Original PDF
    TC55NEM216AFTN55 Toshiba 256K x 16 Low-Power Static RAMs Original PDF
    TC55NEM216AFTN70 Toshiba 262,144 Word By 16 Bit Full CMOS Static RAM Original PDF
    TC55NEM216AFTN70 Toshiba 256K x 16 Low-Power Static RAMs Original PDF
    TC55NEM216AFTNV Toshiba SRAM - Low Power Original PDF
    TC55NEM216AFTV55 Toshiba 262,144-Word BY 16-BIT FULL CMOS STATIC RAM Original PDF
    TC55NEM216AFTV70 Toshiba 262,144-Word BY 16-BIT FULL CMOS STATIC RAM Original PDF
    TC55NEM216ASGV55 Toshiba 262,144-Word BY 16-BIT FULL CMOS STATIC RAM Original PDF
    TC55NEM216ASGV70 Toshiba 262,144-Word BY 16-BIT FULL CMOS STATIC RAM Original PDF
    TC55NEM216ASTV Toshiba SRAM - Low Power Original PDF
    TC55NEM216ASTV55 Toshiba 262,144 Word by 16 Bit Full CMOS Static RAM Original PDF
    TC55NEM216ASTV70 Toshiba 262,144 Word by 16 Bit Full CMOS Static RAM Original PDF
    TC55NEM216ATGN55 Toshiba 262,144-Word BY 16-BIT FULL CMOS STATIC RAM Original PDF
    TC55NEM216ATGN70 Toshiba 262,144-Word BY 16-BIT FULL CMOS STATIC RAM Original PDF
    TC55NEM216ATGV55 Toshiba 262,144-Word BY 16-BIT FULL CMOS STATIC RAM Original PDF
    TC55NEM216ATGV70 Toshiba 262,144-Word BY 16-BIT FULL CMOS STATIC RAM Original PDF

    TC55NEM216 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TC55NEM216AFTV55

    Abstract: No abstract text available
    Text: TC55NEM216AFTV55,70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55NEM216AFTV is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to


    Original     		TC55NEM216AFTV55 144-WORD 16-BIT TC55NEM216AFTV 304-bit PDF

    TC55NEM216ATGN

    Abstract: TC55NEM216ATGN55 TC55NEM216
    Text: TC55NEM216ATGN55,70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55NEM216ATGN is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ±


    Original     		TC55NEM216ATGN55 144-WORD 16-BIT TC55NEM216ATGN 304-bit TC55NEM216 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC55NEM216AFTN55,70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55NEM216AFTN is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ±


    Original     		TC55NEM216AFTN55 144-WORD 16-BIT TC55NEM216AFTN 304-bit PDF

    TC55NEM216ASTV

    Abstract: TC55NEM216ASTV55
    Text: TC55NEM216ASTV55,70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55NEM216ASTV is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to


    Original     		TC55NEM216ASTV55 144-WORD 16-BIT TC55NEM216ASTV 304-bit PDF

    TC55NEM216AFTN

    Abstract: TC55NEM216AFTN55
    Text: TC55NEM216AFTN55,70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55NEM216AFTN is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ±


    Original     		TC55NEM216AFTN55 144-WORD 16-BIT TC55NEM216AFTN 304-bit PDF

    TC55NEM216AFTN

    Abstract: TC55NEM216AFTN55
    Text: TC55NEM216AFTN55,70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55NEM216AFTN is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ±


    Original     		TC55NEM216AFTN55 144-WORD 16-BIT TC55NEM216AFTN 304-bit PDF

    TC55NEM216AFTN

    Abstract: TC55NEM216AFTN55
    Text: TC55NEM216AFTN55,70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55NEM216AFTN is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ±


    Original     		TC55NEM216AFTN55 144-WORD 16-BIT TC55NEM216AFTN 304-bit PDF

    TC55NEM216AFTV55

    Abstract: No abstract text available
    Text: TC55NEM216AFTV55,70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55NEM216AFTV is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to


    Original     		TC55NEM216AFTV55 144-WORD 16-BIT TC55NEM216AFTV 304-bit PDF

    TC55NEM216ATGV55

    Abstract: No abstract text available
    Text: TC55NEM216ATGV55,70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55NEM216ATGV is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by


    Original     		TC55NEM216ATGV55 144-WORD 16-BIT TC55NEM216ATGV 304-bit PDF

    TC55NEM216AFTN

    Abstract: TC55NEM216AFTN55
    Text: TC55NEM216AFTN55,70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55NEM216AFTN is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ±


    Original     		TC55NEM216AFTN55 144-WORD 16-BIT TC55NEM216AFTN 304-bit PDF

    TC55NEM216ASGV55

    Abstract: No abstract text available
    Text: TC55NEM216ASGV55,70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55NEM216ASGV is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to


    Original     		TC55NEM216ASGV55 144-WORD 16-BIT TC55NEM216ASGV 304-bit PDF

    TC55NEM216ATGV55

    Abstract: No abstract text available
    Text: TC55NEM216ATGV55,70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55NEM216ATGV is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to


    Original     		TC55NEM216ATGV55 144-WORD 16-BIT TC55NEM216ATGV 304-bit PDF

    TC55NEM216ASTV

    Abstract: TC55NEM216ASTV55
    Text: TC55NEM216ASTV55,70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55NEM216ASTV is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to


    Original     		TC55NEM216ASTV55 144-WORD 16-BIT TC55NEM216ASTV 304-bit PDF

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000 PDF

    tsop-56 samsung

    Abstract: TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga
    Text: TOSHIBA FLASH Network FCRAM NOR Flash SRAM Memory Selection Guide PSRAM NAND Flash Multi-Chip Packages Memory Cards September 2004 Toshiba America Electronic Components TOSHIBA Toshiba offers one of the widest varieties of memory products of any semiconductor manufacturer. Based on the three core memory technologies:


    Original     		576Mb 256Mb tsop-56 samsung TC58DVM72A1FTI0 tc58fvm5t2atg TSOP1-48 THNCF1G02DG THNCF1G02DGI SD-M512 TC58NVG0S3AFTI5 THNCF128MMG toshiba Nand flash bga PDF

    th50vpf

    Abstract: TH50VPF5783 TC55VEM208ASTN55 th58nvg TC554161AFT-70L TC554161AFT-70 TC55V8512JI-12 TC55VD1636FFI-150 tc58128aft TC58NVG0S3AFT00
    Text: MOS Memories Dynamic RAMs Static RAMs NOR Flash Memories NAND E2PROM Media Card MCPs multi-chip packages z 2 z 3 z 10 z 11 z 12 z 13 1 Dynamic RAMs Fast Cycle RAM (FCRAMTM ) (DDR) Capacity 256 Mbits 288 Mbits Product No. — TC59LM806CFT-50 — TC59LM806CFT-55


    Original     		TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60 TC59LM814CFT-50 TC59LM814CFT-55 TC59LM814CFT-60 TC59LM818DMB-30 TC59LM818DMB-33 TC59LM818DMB-40 64M/32M th50vpf TH50VPF5783 TC55VEM208ASTN55 th58nvg TC554161AFT-70L TC554161AFT-70 TC55V8512JI-12 TC55VD1636FFI-150 tc58128aft TC58NVG0S3AFT00 PDF

    TH58NVG2S3

    Abstract: TC554161AFT-70L 69-206 TC55VCM316BSGN55 TSOP 48 Package nand memory toshiba toshiba sram 2 mbits AFT 181 TC58FVM6T2AFT65 TC58*VG*02 AFT-70L
    Text: 2004-2 PRODUCT GUIDE MOS Memory semiconductor 2004 http://www.semicon.toshiba.co.jp/eng 1. Selection Guide DRAM Dynamic RAMs Network FCRAMTM (DDR FCRAM) 200 MHz (400 Mbps) 182 MHz (364 Mbps) 167 MHz (334 Mbps) 32M x 8 TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60


    Original     		TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60 TC59LM814CFT-50 TC59LM814CFT-55 TC59LM814CFT-60 TC59LM818DMB-30 TC59LM818DMB-33 TC59LM818DMB-40 TC59LM836DMB-30 TH58NVG2S3 TC554161AFT-70L 69-206 TC55VCM316BSGN55 TSOP 48 Package nand memory toshiba toshiba sram 2 mbits AFT 181 TC58FVM6T2AFT65 TC58*VG*02 AFT-70L PDF