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    Toshiba America Electronic Components TC551664AJ-15

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    Bristol Electronics TC551664AJ-15 54 1
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    Quest Components TC551664AJ-15 98
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    Toshiba America Electronic Components TC551664AJ-20

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    Toshiba America Electronic Components TC551664AJ15

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    TC551664AJ Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC551664AJ Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC551664AJ-15 Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC551664AJ-20 Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF

    TC551664AJ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TC551664AJ-20 1/2 IL08 * C-MOS 1M(65,536X16)-BIT STATIC RAM -TOP VIEW- A4 1 44 A5 A3 2 43 A6 A2 3 42 A7 A1 4 41 OE A0 5 4 3 2 1 44 40 UB CE 6 43 42 39 LB I/O1 7 27 38 I/O16 I/O2 8 37 I/O15 I/O3 9 36 I/O14 I/O4 10 35 I/O13 11 VDD(+5V) 12 GND I/O5 13


    Original     		TC551664AJ-20 536X16 I/O16 I/O14 I/O15 I/O13 I/O10 I/O11 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC551664AJ-15,-20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664AJ is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		TC551664AJ-15 536-WORD 16-BIT TC551664AJ 576-bit SOJ44-P-400-1 PDF

    SOJ44-P-400-1

    Abstract: TC551664AJ TC551664AJ-15 TC551664AJ-20 00151341
    Text: TO SHIBA TC551664AJ-15,-20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664AJ is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		TC551664AJ-15 536-WORD 16-BIT TC551664AJ 576-bit SOJ44-P-4QO-1 SOJ44-P-400-1 TC551664AJ-20 00151341 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC551664AJ-15/20 SILICON GATE CMOS Description The TC551664AJ is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide


    OCR Scan     		TC551664AJ-15/20 TC551664AJ 44-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC551664AJ-15,-20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664AJ is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		TC551664AJ-15 536-WORD 16-BIT TC551664AJ 576-bit SOJ44-P-400-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551664AJ-15/20 SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC551664AJ is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide high


    OCR Scan     		TC551664AJ-15/20 TC551664AJ SR01030895 GD26D7S SOJ44-P-400) t1724fl PDF

    TC551664AJ-15

    Abstract: TC551664AJ
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551664AJ-15/20 SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC551664AJ is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide high


    Original     		TC551664AJ-15/20 TC551664AJ SR01030895 SOJ44-P-400) TC551664AJ-15 PDF

    TC551664AJ-12

    Abstract: No abstract text available
    Text: TC551664AJ-12 TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664AJ is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		TC551664AJ-12 536-WORD 16-BIT TC551664AJ 576-bit TC551e. SOJ44-P-400-1 TC551664AJ-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC551664BJ/BFT-12,-15 TOSHIBA M OS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1 44-P-400-0 PDF

    tc551664aj-12

    Abstract: SOJ44-P-400-1 TC551664AJ-15 TC551664BJ
    Text: TOSHIBA TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-4QO-1 44-P-400-0 tc551664aj-12 SOJ44-P-400-1 TC551664AJ-15 TC551664BJ PDF

    TC554161FTL-85L

    Abstract: TC55257DPL-70L TC55257DFL-70L TC55257DPL-85L TC55257DFI-85L TC551001CF tc55257dfl-85l TC58F400FTI-90
    Text: Index n INDEX TC551001CF-55 TC551001CF-55L TC551001CF-70 TC551001CF-70L TC551001CF-85 TC551001CF-85L TC551001CFI-70 TC551001CFI-70L TC551001CFI-85 TC551001CFI-85L TC551001CFT-55 TC551001CFT-55L TC551001CFT-70 TC551001CFT-70L TC551001CFT-85 TC551001CFT-85L


    Original     		TC551001CSRI-85L TC551001CST-55 TC551001CST-55L TC551001CST-70 TC551001CST-70L TC551001CST-85 TC551001CST-85L TC551001CSTI-70 TC551001CSTI-70L TC551001CSTI-85 TC554161FTL-85L TC55257DPL-70L TC55257DFL-70L TC55257DPL-85L TC55257DFI-85L TC551001CF tc55257dfl-85l TC58F400FTI-90 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1 44-P-400-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC551664 BJ/BFT -12 TC551664 BJ/BFT-15 DATA SILICON GATE CM O S TENTATIVE 65,536-WORD BY 16-BIT CM O S STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536


    OCR Scan     		TC551664 BJ/BFT-15 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1 PDF

    CTX-138-ND

    Abstract: A2096 7128J
    Text: N January 2001 Rev 2.0 Evaluation Board Instruction Manual WaveVision Digital Interface Board Rev 2 1999 National Semiconductor Corporation www.national.com Table of Contents 1.0


    Original     		PDF

    LM340T5

    Abstract: sine wave generator using opamp A2098 EPM7128ELC84-15 transistor a2098 ups PURE SINE WAVE schematic diagram ADC14061 ADC14061EVAL ADC14161 ADC16061
    Text: National Semiconductor October 2004 Rev 4a Evaluation Board Instruction Manual ADC14061 / ADC14161 14-Bit, 2.5 MSPS, 390mW Analog-to-Digital Converters and ADC16061 16-Bit, 2.5 MSPS, 390mW Analog-to-Digital Converter 2002 National Semiconductor Corporation


    Original     		ADC14061 ADC14161 14-Bit, 390mW ADC16061 16-Bit, LM340T5 sine wave generator using opamp A2098 EPM7128ELC84-15 transistor a2098 ups PURE SINE WAVE schematic diagram ADC14061EVAL ADC14161 ADC16061 PDF

    TC551664AJ-12

    Abstract: SOJ44-P-400-1 TC551664AJ-15 TC551664BJ
    Text: TO SHIBA TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit 44-P-400-0 TC551664AJ-12 SOJ44-P-400-1 TC551664AJ-15 TC551664BJ PDF

    S1021

    Abstract: A5208-ND p4962 RP10 RP12 RP15 M2204-ND
    Text: National Semiconductor January 2005 Rev 5 Evaluation Board Instruction Manual WaveVision Digital Interface Board 2002, 2003, 2004, 2005 National Semiconductor Corporation www.national.com Table of Contents 1.0 Introduction . 3


    Original     		PDF

    BFT10A

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC551664BJ/BFT-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		TC551664BJ/BFT-10 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1 44-P-400-0 BFT10A PDF

    TC551664AJ-15

    Abstract: SOJ44-P-400-1 TC551664AJ-12 TC551664BJ TC551664AJ
    Text: TOSHIBA TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-4QO-1 44-P-400-0 KH0-13tM TC551664AJ-15 SOJ44-P-400-1 TC551664AJ-12 TC551664BJ TC551664AJ PDF

    EPM7128* kit

    Abstract: A5208-ND BY165 S1021 RP10 RP12 RP15 M2204-ND EPM7128ELC84-15 766163101g
    Text: N May 1999 Evaluation Board Instruction Manual WaveVision Digital Interface Board Rev 2 1999 National Semiconductor Corporation www.national.com Table of Contents 1.0 Introduction. 4


    Original     		PDF

    toshiba toggle mode nand

    Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
    Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit


    Original     		64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP PDF