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    TC551664 Price and Stock

    Toshiba Corporation TC551664BJ-12

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    Bristol Electronics TC551664BJ-12 5,964
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    Toshiba America Electronic Components TC551664BFT-12

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    Toshiba America Electronic Components TC551664BJ-15

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    Bristol Electronics TC551664BJ-15 197 1
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    Quest Components TC551664BJ-15 2,392
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    ComSIT USA TC551664BJ-15 382
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    Toshiba America Electronic Components TC551664J-15

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    Bristol Electronics TC551664J-15 162 1
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    Quest Components TC551664J-15 1,054
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    TC551664J-15 76
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    TC551664J-15 37
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    TC551664J-15 3
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    Toshiba America Electronic Components TC551664J-20

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    TC551664 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC551664 Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC551664AJ Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC551664AJ-15 Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC551664AJ-20 Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC551664BFT-10 Toshiba 65,536 Word by 16 Bit CMOS Static RAM Scan PDF
    TC551664BFT-10 Toshiba Scan PDF
    TC551664BFT-12 Toshiba 65,536 Word by 16 Bit CMOS Static RAM Scan PDF
    TC551664BFT-12 Toshiba SRAM Chip, Asynchronous, 1Mbit, SDR, 5V Supply, Commercial, TSOP II, 44-Pin Scan PDF
    TC551664BFT-12 Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC551664BFT-12(EL) Toshiba SRAM Chip, Asynchronous, 1Mbit, SDR, 5V Supply, Commercial, TSOP II, 44-Pin, Tape And Reel Scan PDF
    TC551664BFT-15 Toshiba 65,536 Word by 16 Bit CMOS Static RAM Scan PDF
    TC551664BFT-15 Toshiba SRAM Chip, Asynchronous, 1Mbit, SDR, 5V Supply, Commercial, TSOP II, 44-Pin Scan PDF
    TC551664BFT-15 Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC551664BFTI-12 Toshiba 65,536 Word by 16 Bit CMOS Static RAM Scan PDF
    TC551664BFTI-12 Toshiba SRAM Chip, Asynchronous, 1Mbit, SDR, 5V Supply, Industrial, TSOP II, 44-Pin Scan PDF
    TC551664BFTI-15 Toshiba 65,536 Word by 16 Bit CMOS Static RAM Scan PDF
    TC551664BFTI-15 Toshiba SRAM Chip, Asynchronous, 1Mbit, SDR, 5V Supply, Industrial, TSOP II, 44-Pin Scan PDF
    TC551664BJ Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC551664BJ-10 Toshiba 65,536 Word by 16 Bit CMOS Static RAM Scan PDF
    TC551664BJ-10 Toshiba Scan PDF

    TC551664 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TC551664AJ-20 1/2 IL08 * C-MOS 1M(65,536X16)-BIT STATIC RAM -TOP VIEW- A4 1 44 A5 A3 2 43 A6 A2 3 42 A7 A1 4 41 OE A0 5 4 3 2 1 44 40 UB CE 6 43 42 39 LB I/O1 7 27 38 I/O16 I/O2 8 37 I/O15 I/O3 9 36 I/O14 I/O4 10 35 I/O13 11 VDD(+5V) 12 GND I/O5 13


    Original     		PDF TC551664AJ-20 536X16 I/O16 I/O14 I/O15 I/O13 I/O10 I/O11

    TC551664AJ-15

    Abstract: TC551664AJ
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551664AJ-15/20 SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC551664AJ is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide high


    Original     		PDF TC551664AJ-15/20 TC551664AJ SR01030895 SOJ44-P-400) TC551664AJ-15

    TC554161FTL-85L

    Abstract: TC55257DPL-70L TC55257DFL-70L TC55257DPL-85L TC55257DFI-85L TC551001CF tc55257dfl-85l TC58F400FTI-90
    Text: Index n INDEX TC551001CF-55 TC551001CF-55L TC551001CF-70 TC551001CF-70L TC551001CF-85 TC551001CF-85L TC551001CFI-70 TC551001CFI-70L TC551001CFI-85 TC551001CFI-85L TC551001CFT-55 TC551001CFT-55L TC551001CFT-70 TC551001CFT-70L TC551001CFT-85 TC551001CFT-85L


    Original     		PDF TC551001CSRI-85L TC551001CST-55 TC551001CST-55L TC551001CST-70 TC551001CST-70L TC551001CST-85 TC551001CST-85L TC551001CSTI-70 TC551001CSTI-70L TC551001CSTI-85 TC554161FTL-85L TC55257DPL-70L TC55257DFL-70L TC55257DPL-85L TC55257DFI-85L TC551001CF tc55257dfl-85l TC58F400FTI-90

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC551664BJ/BFT-12,-15 TOSHIBA M OS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		PDF TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1 44-P-400-0

    TC551664J

    Abstract: No abstract text available
    Text: TOSHIBA TC551664J-15/20/25 SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC551664J is a 1.048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.


    OCR Scan     		PDF TC551664J-15/20/25 TC551664J 400mil DD2b417 B-127

    tc551664aj-12

    Abstract: SOJ44-P-400-1 TC551664AJ-15 TC551664BJ
    Text: TOSHIBA TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		PDF TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-4QO-1 44-P-400-0 tc551664aj-12 SOJ44-P-400-1 TC551664AJ-15 TC551664BJ

    TC551664J-15

    Abstract: cs40
    Text: TOSHIBA TC551664J-15/20/25 SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The T C 5 M 6 6 4 J is a 1.048.576 bit high speed C M O S static random acce ss m em ory organized as 6 5 ,5 3 6 w o rd s by 16 bits and operated trorn a single 5V supply. Toshiba's advanced C M O S tech nolog y and circuit design enable high speed operation.


    OCR Scan     		PDF TC551664J-15/20/25 1664J B-127 TC551664J-15 cs40

    SOJ44-P-400-1

    Abstract: TC551664BJ
    Text: TOSHIBA TC551664BJ/BFT-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		PDF TC551664BJ/BFT-10 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-4QO-1 44-P-400-0 W0-13tM SOJ44-P-400-1 TC551664BJ

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC551664AJ-15,-20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664AJ is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		PDF TC551664AJ-15 536-WORD 16-BIT TC551664AJ 576-bit SOJ44-P-400-1

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		PDF TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1 44-P-400-0

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC551664 BJ/BFT -12 TC551664 BJ/BFT-15 DATA SILICON GATE CM O S TENTATIVE 65,536-WORD BY 16-BIT CM O S STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536


    OCR Scan     		PDF TC551664 BJ/BFT-15 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TENTATIVE TC551664BJI/BFT1-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJI/BFTI is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan     		PDF TC551664BJI/BFT1-12 536-WORD 16-BIT TC551664BJI/BFTI 576-bit TC551664BJ1/BFTI-12 SOJ44-P-400-1 TC551664BJI/BFTI-12 TSOPII44-P-400

    SOJ44-P-400-1

    Abstract: TC551664AJ TC551664AJ-15 TC551664AJ-20 00151341
    Text: TO SHIBA TC551664AJ-15,-20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664AJ is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		PDF TC551664AJ-15 536-WORD 16-BIT TC551664AJ 576-bit SOJ44-P-4QO-1 SOJ44-P-400-1 TC551664AJ-20 00151341

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC551664AJ-15/20 SILICON GATE CMOS Description The TC551664AJ is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide


    OCR Scan     		PDF TC551664AJ-15/20 TC551664AJ 44-pin

    tc551664j

    Abstract: TC551664J-15
    Text: SILICON GATE CMOS DIGITAL INTEGRATED CIRCUIT TC551664J-15.-20.-25 65,536 W O RD x 16 BIT CMOS STATIC RAM DESCRIPTION The TC551664J is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba's CMOS


    OCR Scan     		PDF TC551664J-15 TC551664J TC551664551664J-15

    TC551664AJ-12

    Abstract: SOJ44-P-400-1 TC551664AJ-15 TC551664BJ
    Text: TO SHIBA TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		PDF TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit 44-P-400-0 TC551664AJ-12 SOJ44-P-400-1 TC551664AJ-15 TC551664BJ

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC551664AJ-15,-20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664AJ is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		PDF TC551664AJ-15 536-WORD 16-BIT TC551664AJ 576-bit SOJ44-P-400-1

    Untitled

    Abstract: No abstract text available
    Text: 'SC INTEGRATED CIRCUIT T O S H IB A T O S H IB A M O S D IGITAL IN T E G R A T E D CIRCUIT TC 551664J - 15, TC551664J - 20. T C 5 5 1 6 6 4 J - 2 5 TECHNICAL D A T A SILICON G A T E C M O S PRELIM INARY 65,536 W O R D x 16 BIT C M O S STATIC RAM DESCRIPTION


    OCR Scan     		PDF 551664J TC551664J TC55166AJ SOJ44â

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551664AJ-15/20 SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC551664AJ is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide high


    OCR Scan     		PDF TC551664AJ-15/20 TC551664AJ SR01030895 GD26D7S SOJ44-P-400) t1724fl

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TC551664BJI/B FTl-12,-15 T O S H IB A M O S D IG ITAL IN TEG RATED CIRCUIT T E N T A T IV E SILICON G ATE C M O S 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJI/BFTI is a 1,048,576-bit high-speed static random access memory SRAM organized as


    OCR Scan     		PDF TC551664BJI/BFT1-12 536-WORD 16-BIT TC551664BJI/BFTI 576-bit SC1J44-P-400-1 44-P-400-0

    TC551664AJ-12

    Abstract: No abstract text available
    Text: TC551664AJ-12 TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664AJ is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		PDF TC551664AJ-12 536-WORD 16-BIT TC551664AJ 576-bit TC551e. SOJ44-P-400-1 TC551664AJ-12

    BFT10A

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC551664BJ/BFT-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		PDF TC551664BJ/BFT-10 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-400-1 44-P-400-0 BFT10A

    TC551664AJ-15

    Abstract: SOJ44-P-400-1 TC551664AJ-12 TC551664BJ TC551664AJ
    Text: TOSHIBA TC551664BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC551664BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    OCR Scan     		PDF TC551664BJ/BFT-12 536-WORD 16-BIT TC551664BJ/BFT 576-bit SOJ44-P-4QO-1 44-P-400-0 KH0-13tM TC551664AJ-15 SOJ44-P-400-1 TC551664AJ-12 TC551664BJ TC551664AJ

    043Z

    Abstract: tc5516
    Text: T O S H IB A T E N T A T IV E TC551664BJI/BFT1-12,-15 T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILICO N G A TE C M O S 6 5 ,5 3 6 -W O R D BY 16-BIT CMO S STATIC RA M DESCRIPTION The TC551664BJT/BFTI is a 1,048,576-bit high-speed static random access memory SRAM organized as


    OCR Scan     		PDF TC551664BJI/BFT1-12 536-WORD 16-BIT TC551664BJI/BFTI 576-bit SOJ44-P-4QO-1 44-P-400-0 043Z tc5516